Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Magnetic Sensitivity Improvement of Silicon Vertical Hall Device

Si 종형 Hall 소자의 자기감도 개선

  • Ryu, Ji-Goo (Department of Electronics Eng., Pukyong National University) ;
  • Kim, Nam-Ho (Department of Control & Instrumentation Eng., Pukyong National University) ;
  • Chung, Su-Tae (Department of Electronics Eng., Pukyong National University)
  • Received : 2011.05.25
  • Accepted : 2011.07.14
  • Published : 2011.07.31
Download PDF
⟨ Previous Next ⟩

Abstract

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

Keywords

References

  1. H.Baltes, "Future of IC microtransducer", Sensors and Actuators, A56, pp. 179-192, 1996.
  2. E.H.Hall, "On a new action of the magnet on electric current", Am, J, Math., 2, pp. 287-292, 1897.
  3. A.C.Beer, Galvano magnetic effects in semiconductor, Academic press, New York, 1963.
  4. S,Kordis, "Integrated silicon magnetic field sensor", Sensors and Actuators, 10, pp. 347-378, 1986. https://doi.org/10.1016/0250-6874(86)80054-3
  5. H.Baltes and R.Popvic. "Integrated semiconductor magnetic field sensors", Proceedings of the IEEE, vol. 74, no. 8, pp. 1107-1132, 1986. https://doi.org/10.1109/PROC.1986.13597
  6. P.Ripka and M.Jansok. "Advances in magnetic field sensors", IEEE Sensors Journal, vol. 10, no. 6, pp. 1108-1116, 2010. https://doi.org/10.1109/JSEN.2010.2043429
  7. J.Lenz and A.S.Edelstein "Magnetic sensor and theirs applications", IEEE Sensors Journal, vol. 6, no. 3, pp. 631-649, 2006. https://doi.org/10.1109/JSEN.2006.874493
  8. K.maenaka, M.tsukuhara, and T.Nakamura, "Monolithic silicon magnetic compass.", Sensors and Actuators, A21-A23, pp. 747-750, 1990.
  9. Ch.s.Roumein and D.I.Nikolov, "Five-contact sililon structure based integrated 3D hall sensor.", Electronics Letters, vol. 39, no. 23, 2003.
  10. S.Reymond, P.Kejik, and R.S.Popvic, "True 2D COMS integrated hall sensor.", IEEE Sensors Conference, pp. 860-863, 2007. https://doi.org/10.1109/ICSENS.2007.4388537
  11. R.S.Popvic, "The vertical hall-effect device.", IEEE Electron Device Letters, vol. EDL-5, no. 9, pp. 357-358, 1984. https://doi.org/10.1109/EDL.1984.25945
  12. T.Nakamura and K.Maenaka, "Integrated magnetic sensors.", Sensor and Actuators, A21-A23, pp. 762-769, 1990.
  13. Lj.Ristic and M.poranjape, "Hall devices for multidimensional sensing of magnetic field.", Sensors and Materials. A5, pp. 301-306, 1994.
  14. J.pascal etal, "Intrinsic limits of the sensitivity of CMOS integrated vertical hall devices." Sensors and Actuators, A52, pp. 21-28, 2009.
  15. J.G.Ryu and S.G.Choi," Fabrication and characterization of silicon vertical hall devices.", IEEK, vol. 29A, no. 3, pp. 72-78, 1992.
  16. J.G.Ryu and N.H.Kim, " Noise and operating properties of Si vertical hall device.", KIMICS, vol. 12, no. 10, pp. 1890-1896, 2008.
  17. "Improved hall device find new uses." Electron weekly. no. 29, pp. 59-61, 1985.
  18. U.Falk and R.S.Popvic, "Vertical hall-effect devices with suppressed junction field effects.", The 7th International Conference on Solid-state Sensors and Actuators, pp. 902-903, 1987.
  19. J.MVandenboom and S.Kordic "Offset reduction in Hall plate", Simulation and Experiments, Sensor and Actuator, vol. 18, pp. 179-193, 1989. https://doi.org/10.1016/0250-6874(89)87017-9

Cited by

  1. Magnetic Sensitivity Improvement of 2-Dimensional Silicon Vertical Hall Device vol.23, pp.6, 2014, https://doi.org/10.5369/JSST.2014.23.6.392