JSTS:Journal of Semiconductor Technology and Science

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Analytic Threshold Voltage Model of Recessed Channel MOSFETs

  • Kwon, Yong-Min (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Kang, Yeon-Sung (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Lee, Sang-Hoon (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
  • Received : 2009.01.22
  • Published : 2010.03.31
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Abstract

Threshold voltage is one of the most important factors in a device modeling. In this paper, analytical method to calculate threshold voltage for recessed channel (RC) MOSFETs is studied. If we know the fundamental parameter of device, such as radius, oxide thickness and doping concentration, threshold voltage can be obtained easily by using this model. The model predicts the threshold voltage which is the result of 2D numerical device simulation.

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References

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