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http://dx.doi.org/10.5573/JSTS.2010.10.1.061

Analytic Threshold Voltage Model of Recessed Channel MOSFETs  

Kwon, Yong-Min (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Kang, Yeon-Sung (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Lee, Sang-Hoon (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.10, no.1, 2010 , pp. 61-65 More about this Journal
Abstract
Threshold voltage is one of the most important factors in a device modeling. In this paper, analytical method to calculate threshold voltage for recessed channel (RC) MOSFETs is studied. If we know the fundamental parameter of device, such as radius, oxide thickness and doping concentration, threshold voltage can be obtained easily by using this model. The model predicts the threshold voltage which is the result of 2D numerical device simulation.
Keywords
Threshold voltage; recessed channel MOSFETs; concave; analytic model; depletion width;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
Times Cited By SCOPUS : 0
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