Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Optical power enhancement of superluminescent diodes utilizing trench

Trench 구조를 이용한 단일모드형 고휘도 발광소자의 광출력 증가

  • Yoo, Young-Chae (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Han, Il-Ki (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Lee, Jung-Il (Nano Device Research Center, Korea Institute of Science and Technology)
  • 유영채 (한국과학기술연구원 나노소자연구센터) ;
  • 한일기 (한국과학기술연구원 나노소자연구센터) ;
  • 이정일 (한국과학기술연구원 나노소자연구센터)
  • Published : 2007.09.30
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Abstract

J-shaped superluminescent diodes (SLD) utilizing trench structure have been fabricated on the multiple quantum dots epi-structure with its ground state energy wavelength of $1.3\;{\mu}m$. It was observed that optical power was drastically increased up to 20 times in comparison with that of SLD without trench structure, The electroluminescence characteristics showed that the peak intensity of excited state was several ten times higher in the SLD with trench than without trench structure. It is explained that the optical power enhancement of J-shaped SLD with trench structure resulted from the drastic increase of peak intensity of excited state.

기저준위의 중심 피크가 $1.3\;{\mu}m$인 다층 양자점 구조를 사용하여 트렌치 구조를 가진 J-형태의 고휘도 발광소자 (superluminescent diodes)를 제작하였다. 도파로와 트렌치 구조 사이의 간격이 좁아지면서 광출력이 최대 20배까지 증가하였음을 확인하였다. 전류의 증가에 의한 EL 피크 측정결과 트렌치 구조를 가진 경우에 여기준위의 피크가 기저준위의 피크보다 수 십배 증가하는 것을 확인하였고, 이로부터 트렌치 증가에 의한 광출력의 증가는 양자점의 여기준위에 의한 것으로 판단하였다.

Keywords

References

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