Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

The RF performance degradation in Bulk DTMOS due to Hot Carrier effect

Hot Carrier 현상에 의한 Bulk DTMOS의 RF성능 저하

  • Park Jang-Woo (Department of Electronic Engineering, Incheon University) ;
  • Lee Byoung-Jin (Department of Electronic Engineering, Incheon University) ;
  • Yu Jong-Gun (Department of Electronic Engineering, Incheon University) ;
  • Park Jong-Tae (Department of Electronic Engineering, Incheon University)
  • 박장우 (시립인천대학교 전자공학과) ;
  • 이병진 (시립인천대학교 전자공학과) ;
  • 유종근 (시립인천대학교 전자공학과) ;
  • 박종태 (시립인천대학교 전자공학과)
  • Published : 2005.02.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper reports the hot carrier induced RF performance degradation of bulk dynamic threshold voltage MOSFET (B-DTMOS) compared with bulk MOSFET (B-MOS). In the normal and moderate mode operations, the degradations of cut-off frequency $(f_{T})$ and minimum noise figure $(F_{min})$ of B-DTMOS are less significant than those of B-MOS devices. Our experimental results show that the RF performance degradation is more significant than the U performance degradation after hot carrier stressing. Also, the degradation characteristics of RF power Performance of B-DTMOS due to hot carrier effects are measured for the first time.

본 논문에서는bulk dynamic threshold voltage MOSFET(B-DTMOS)와 bulk MOSFET(B-MOS)에서 hot carrier 현상으로 인한 RF 성능 저하를 비교하였다. Normal 및 moderate 모드에서 B-DTMOS의 차단주파수 및 최소잡음지수의 열화가 B-MOS 소자 보다 심하지 않음을 알 수 있었다. 실험 견과로부터 hot carrier에 의한 RF 성능 저하가 DC 특성 열화 보다 심함을 알 수 있었다. 그리고 처음으로 hot carrier 현상으로 인한 B-DTMOS 소자의 RF 전력 특성 저하를 측정하였다.

Keywords

References

  1. F. Assaderaghi, D. Sinitsky, S. Parke, J. Bokor, P. Ko, and C. Hu, 'A Dynamic Threshold Voltage MOSFET (DTMOS) for Ultra-Low Voltage Operation,' Tech. of Digest IEDM, pp. 809-813, 1994 https://doi.org/10.1109/IEDM.1994.383301
  2. A.Yagishita, T. Saito, S. Inumiya, K. Matsuo, Y. Tsunashima, K. Suguro, and T. Arikado, 'Dynamic Threshold Voltage Damascene Metal Gate MOSFET (DT-DMG-MOS) with Low Threshold Voltage, High Drive Current, and Uniform Electrical Characteristics,' Tech. of Digest IEDM, pp. 663-667, 2000 https://doi.org/10.1109/IEDM.2000.904406
  3. Y. Momiyama, T. Hirose, H. Kurata, K. Goto, Y. Watanabe, and T. Sugii, ' A 140GHz $f_T$ and 60 GHz $f_{max}$ DTMOS Integrated with High-Performance SOI Logic Technology,' Tech. Digest of IEDM, pp. 451-453, 2000 https://doi.org/10.1109/IEDM.2000.904353
  4. S. S. Rofail, and Y. K. Seng, 'Experimentally-Based Analytical Model of Deep-Submicron LDD pMOSFET's in a Bi-MOS Hybrid-Mode Environment,' IEEE Trans. Electron Devices, vol. 44, no. 9, pp. 1473-1482, 1997 https://doi.org/10.1109/16.622604
  5. R. Hung, Y. Y. Wang, and R. Han, 'Analytical Model for the Collector Current in SOI Gated-Controlled Hybrid Transistor,' Solid-State Electronics, vol. 39, no. 12, pp.1816-1818, 1998 https://doi.org/10.1016/S0038-1101(96)00118-9
  6. T. Douseki, S. Shigematsu, J. Yamada, M. Harada, H. Inokawa, and T. Tsuchiya, 'A 0.5-V MTCMOS/SIMOX logic gate', IEEE Journal of Solid-State Circuits, vol. 32, no. 10, pp. 1604-1609, 1997 https://doi.org/10.1109/4.634672
  7. R. Huang, J. Wang, X. Zhang, and Y. Wang, 'Hot-carrier induced degradation in mesa-isolated n-channel SOI MOSFETs operating in a bi-MOS mode,' IEEE Trans. Electron Devices, vol. 48, no. 8, pp. 1594-1598, 2001 https://doi.org/10.1109/16.936565
  8. C.Y. Chang, J.G. Su, H.M. Hsu, S.C. Wong, T.Y. Huang, and Y.C. Sun, 'Investigation of Dynamic Threshold-Voltage MOSFET with 65GHz Normal Mode $f_T$ and 220GHz Over-Drive Mode $f_T$ for RF Applications,' Symp, on VLSI Technology, pp. 89-90, 2001
  9. J.K. Lee, N.J. Choi, C.G. Yu, J.P. Colinge, and J.T. Park, 'Temperature Dependence of Hot-Carrier Degradation in Silicon-on-Insulator Dynamic Threshold Voltage MOS Transistors,' IEEE Electron Dev Letters, vol. 23, no. 11, pp. 673-675, 2002 https://doi.org/10.1109/LED.2002.805009
  10. S. H. Renn, J.L. Pelloie, and F. Balestra, 'Hot-Carrier Effects and Reliable Lifetime Prediction in Deep Submicron N- and P-Channel SOI MOSFET's,' IEEE Trans. Electron Device, vol. 45, no. 11, pp. 2335-2342, 1998 https://doi.org/10.1109/16.726651
  11. C. C. Enz and Y. Cheng, 'MOS Transistor Modeling for RF IC Design,' IEEE Trans. Solid-State Circuits, vol. 35, no. 2, pp. 186-201, 2000 https://doi.org/10.1109/4.823444
  12. Y. T. Yew, C.H. Ling, and D.S. Ang, 'Observation of MOSFET Degradation Due to Electrical Stressing Through Gate-to-Drain Capacitance,' IEEE Electron Device Letters, vol. 12, no. 7, pp. 366-368, 1991 https://doi.org/10.1109/55.103609
  13. S. Naseh, M.J. Deen, and O. Marinov, 'Effects of Hot-Carrier Stress on the RF Performance of 0.18 um Technology NMOSFETs and Circuits,' Proc. of International Reliability Physics Sym., pp. 98-104, 2002
  14. H. Fukui, 'Optimal noise figure of microwave GaAs MESFETs,' IEEE Trans. Electron Devices, vol. 26, no. 7, pp. 1032-1037, 1979 https://doi.org/10.1109/T-ED.1979.19541
  15. T. Sowlati, D.M. Leenaerts, 'A 2.4GHz $0.18{\mu}m$ CMOS Self-Biased Cascade Power Amplifier,' IEEE J. Solid-State Circuits, vol. 38, no. 8, pp. 1318-1324, 2000
  16. W. Li, Q. Li, J.S. Yuan, J. Mcconkey, 'Hot-carrier-Induced Circuit Degradation for 0.18um CMOS Technology,' Quality Electronic Design Int. Symp, pp. 284-289, 2001 https://doi.org/10.1109/ISQED.2001.915244