한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제16권9호
  • /
  • Pages.771-774
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  • 2003
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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SONOS 구조를 갖는 멀티 비트 소자의 프로그래밍 특성

Programming Characteristics of the Multi-bit Devices Based on SONOS Structure

  • 김주연 (울산과학대학교 전기전자통신학부)
  • 발행 : 2003.09.01
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초록

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

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참고문헌

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