JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Integration Process and Reliability for $SrBi_2$ $Ta_2O_9$-based Ferroelectric Memories

  • Yang, B. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Lee, S.S. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Kang, Y.M. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Noh, K.H. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Hong, S.K. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Oh, S.H. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Kang, E.Y. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Lee, S.W. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Kim, J.G. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Shu, C.W. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Seong, J.W. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Lee, C.G. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Kang, N.S. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.) ;
  • Park, Y.J. (FeRAM Team, memory R&D Division, Hynix Semiconductor Inc.)
  • Published : 2001.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

Keywords

References

  1. B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee, and W. Jo; Nature, 401, p. 682,1999 https://doi.org/10.1038/44352
  2. B. Yang, Y. M. Kang, S. S. Lee, K. H. Noh, N. K. Kim, S. J. Yeom, N. S. Kang, and H. G. Yoon, 'Highly Reliable 1Mbit Ferroelectric Memories with Newly Developed BLT Thin Films and Steady Integration Schemes', (accepted in IEDM 2001) https://doi.org/10.1109/IEDM.2001.979633
  3. C. A. Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott, Nature, 374, 627 (1995) https://doi.org/10.1038/374627a0
  4. E. Fujii, et al., 'Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y1 family)', IEDM, p. 597 (1997) https://doi.org/10.1109/IEDM.1997.650455
  5. S. K. Hong, B. Yang, S. H. Oh, Y. M. Kang, and N. S. Kang, J. Appl. Phys. 89, 8011 (2001) https://doi.org/10.1063/1.1371277
  6. J. Kawahara, T. Matsuki, K. kishimoto, K. Koyanagi, and Y. Hayashi, Proceedings SSDM, Yokohama, 1996, p. 800
  7. Y. Shimamoto, K. Kushida-Abedelghafar, H. Miki, and Y. Fujisaki, Appl. Phys. Lett. 70, 3096 (1997) https://doi.org/10.1063/1.119102
  8. S. Zafar, V. Kaushik, P. Laberge, P. Chu, R. E. Jones, R. L. Hance, P. Zurcher, B. E. White, D. Taylor, B. Melnick, and S. Gillespie, J. Appl. Phys. 82, 4469 (1997) https://doi.org/10.1063/1.366179
  9. B. Yang, C. W. Suh, C. G. Lee, E. Y. Kang, Y. M. Kang, S. S. Lee, S. K. Hong, N. S. Kang, and J. M. Yang, Appl. Phys. Lett. 77, 1372 (2000) https://doi.org/10.1063/1.1289913
  10. B. Yang, S. H. Oh, C. H. Chung, K. H. Noh, Y. M. Kang, S. S. Lee, S. K. Hong, N. S. Kang, and J. H. Hong, 'Impurities in dielectrics and hydrogen barriers for $SrBi_2Ta_2O_9$based ferroelectric memories', (accepted in Appl. Phys. Lett. 79, September issue (2001) https://doi.org/10.1063/1.1403664
  11. T. Hase, T. Noguchi, and Y. Miyasaka, Integr. Ferroelectr. 16, 29 (1997)
  12. M. Matsuura, H. kotani, and H. Abe, SSDM, Sendai, 239 (1990)
  13. J. D. Chapple-Sokol, W. A. Pliskin, and R. A. Conti, J. Electrochem. Soc. 138, 3723 (1991) https://doi.org/10.1149/1.2085488
  14. J. Kawahara, T. Matsuki, K. kishimoto, K. Koyanagi, and Y. Hayashi, SSDM, Yokohama, 800 (1996)
  15. T. Hase, T. Noguchi, and Y. Miyasaka, Integr. Ferroelectr. 16, 29 (1997)
  16. J. Han and T. P. Ma, Appl. Phys. Lett. 71, 1267 (1997) https://doi.org/10.1063/1.119869
  17. J. Im, O. Auciello, A. R. Krauss, D. M. Gruen, R. P. H. Chang, S. H. Kim, and A. I. Kingon, Appl. Phys. Lett. 74, 1162 (1999) https://doi.org/10.1063/1.123474
  18. Y. Kumagai, H. Miura, and T. Kumazawa, Exted. Abst. Sol. Stat. Dev. Mater., Tokyo, 1999, p. 388
  19. N. Hirashita and T. Uchiyama, BUNSEKI KAGAKU 43, 757 (1994)
  20. H. Namatsu and K. Minegishi, J. Electrochem. Soc. 140, 1121 (1993) https://doi.org/10.1149/1.2056209
  21. S. Ito and Y. Homma, J. Vac. Sci. Technol. A9, 2696 (1991) https://doi.org/10.1116/1.577227
  22. N. Shimiyama, K. Machida, K. Murase, and T. Tsuchiya, Proceedings SOVT, Hawaii, 1992, p. 94
  23. T. Yamaha and F. Masuoka, J. Electrochem. Soc. 146, 3065 (1999) https://doi.org/10.1149/1.1392051
  24. M. Grossmann et al., 'Lifetime Estimation due to Imprint Failure in Ferroelectric $SrBi_2Ta_2O_9$ Thin Films,' Appl. Phys. Lett., 76 [3] 363 (2000) https://doi.org/10.1063/1.125755
  25. K. Nakao et al., 'Voltage Shift Effect on Retention Failure in Ferroelectric Memories,' Jap. J. Appl, Phys., 37, 5203 (1998) https://doi.org/10.1143/JJAP.37.5203
  26. Y. M. Kang et al., 'Estimation of Imprint Failure Lifetime in FeRAM with $Pt/SrBi_2Ta_2O_9/Pt$ Capacitor,' IEICE Trans. Electronics, E84-C [6], 757 (2001)