참고문헌
- S.S. Eaton, D.B. Butler, M. Parris, D. Wilson, H. McNeille; IEEE Intern. Solid State Circuits Conf. Digest of Technical Papers, p.130, 1988
- H. Ishiwara, T. Shimamura and E. Tokumitsu; Jpn. J. Appl. Phys. 36, p. 1655, 1997 https://doi.org/10.1143/JJAP.36.1655
- T. Kijima and H.Matsunaga; Jpn. J. Appl. Phys., 38, p. 2281,1999 https://doi.org/10.1143/JJAP.38.2281
- Y. Fujimori., T.Nakamura, and A.Kamisawa.; Jpn. J. Appl. Phys., 38, p. 2285,1999 https://doi.org/10.1143/JJAP.38.2285
- H. Ishiwara; Mater. Res. Soc. Sympo. Proc. 596, p. 427, 2000
- S-M. Yoon, E.Tokumitsu. and H.Ishiwara; Jpn. J. Appl. Phys., 39,p. 2119, 2000 https://doi.org/10.1143/JJAP.39.2119
- H. Ishiwara; Proc. Intern. Sympo. Applications of Ferroelectrics, Hawaii, Aug. 2000 (in press)
- E. Tokumitsu, G.Fujii, and H.Ishiwara : Jpn. J. Appl. Phys., 39, p.2125, 2000 https://doi.org/10.1143/JJAP.39.2125
- Y. Saito, K. Sekine, M. Hirayama, and T. Ohmi; Jpn. J. Appl. Phys., 38, p. 2329, 1999 https://doi.org/10.1143/JJAP.38.2329
- Y. Fujisaki, T. Kijima, and H. Ishiwara; Jpn. J. Appl. Phys. 39, Pt.2, L1075, 2000 https://doi.org/10.1143/JJAP.39.L1075
- S.Y. Wu; IEEE Trans. on Electron Devices, ED-21, p. 499, 1974
- B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee, and W. Jo; Nature, 401, p. 682,1999 https://doi.org/10.1038/44352
- T. Kijima and H. Ishiwara; Ext. Abstracts of Intern. Conf on. Solid State Devices and Materials, Sendai, No.LC-I-3, p. 302, 2000
- H. Ishiwara.; Ext. Abstracts of Intern. Conf. on. Solid State Devices and Materials, Hiroshima, No. D-3-5, p. 222. 1988
- S-M. Yoon and H. Ishiwara; 2000 Intern. Electron Device Meeting, San Francisco, No.13.6