Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2014.10a
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- Pages.773-776
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- 2014
Silicon Nano wire Gate-all-around SONOS MOSFET's analog performance by width and length
실리콘 나노와이어 MOSFET's의 채널 길이와 폭에 따른 아날로그 특성
- Kwon, Jae-hyup (Incheon National University) ;
- Seo, Ji-hoon (Incheon National University) ;
- Choi, Jin-hyung (Incheon National University) ;
- Park, Jong-tae (Incheon National University)
- Published : 2014.10.28
Abstract
In this work, analog performances of silicon nanowire MOSFET with different length and channel width have been measured. The channel widths are 20nm, 30nm, 80nm, 130nm and lengths are 250nm, 300nm, 350nm, 500nm. temperatures
본 연구에서는 채널 길이와 폭의 변화에 따른 실리콘 나노와이어 MOSFET 소자의 아날로그 특성을 비교 분석 하였다. 측정 온도는