Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2014.10a
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- Pages.769-772
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- 2014
Study of relation between gate overlap length and device reliability in amorphous InGaZnO thin film transistors
비정질 InGaZnO 박막트랜지스터에서 Gate overlap 길이와 소자신뢰도 관계 연구
- Moon, Young-Seon (Inchoen National University) ;
- Kim, Gun-Young (Inchoen National University) ;
- Jeong, Jin-Yong (Inchoen National University) ;
- Kim, Dae-Hyun (Inchoen National University) ;
- Park, Jong-Tae (Inchoen National University)
- Published : 2014.10.28
Abstract
The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel
비정질 InGaZnO 박막트랜지스터의 Gate Overlap 길이에 따른 NBS(Negative Bias Stress) 및 hot carrier 스트레스 후 시간별 문턱전압의 변화에 의한 소자신뢰도를 분석하였다. 측정에 사용된 소자는 비정질 InGaZnO TFT이며 채널 폭
Keywords
- a-IGZO TFT;
- Gate Overlap;
- NBS(Negative Bias Stress);
- HC(Hot Carrier Stress);
- Hump Effect;
- Threshold voltage