• New & Renewable Energy
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• v.17 no.1
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• pp.1-6
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• 2021

Transparent conducting oxide (TCO) films have been widely used in optoelectronic devices, such as OLEDs, TFTs, and solar cells. However, thin films of indium tin oxide (ITO) have few disadvantages pertaining to process parameters such as substrate temperature and sputtering power. In this study, we investigated the requirements for using TCO films in silicon-based solar cells and the best alternative TCO materials to improve their efficiency. Moreover, we discussed the current status of high-efficiency solar cells using low-temperature TCO films such as indium zinc oxide and Zr-doped indium oxide.

• Journal of the Korean Electrochemical Society
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• v.18 no.4
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• pp.161-171
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• 2015

High-yield zinc germanium oxide ($Zn_2GeO_4$) and zinc tin oxide ($Zn_2SnO_4$) nanowires were synthesized using a hydrothermal method. We investigated the electrochemical properties of these $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires as anode materials of lithium ion battery and sodium ion battery. The $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires showed excellent cycling performance of the lithium ion battery, with a maximum capacity of 1021 mAh/g and 692 mAh/g after 50 cycles, respectively, with a high Coulomb efficiency of 98 %. For the first time, we examined the cycling performance of $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires for sodium ion batteries. The maximum capacity is 168 mAh/g and 200 mAh/g after 50 cycles, respectively, with a high Coulomb efficiency of 97%. These nanowires are expected as promising electrode materials for the development of high-performance lithium ion batteries as well as sodium ion batteries.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.14-17
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• 2014

In this paper, indium reduced materials for transparent conductive electrodes (TCE) were fabricated and their physical properties were evaluated. Two of materials, indium-zinc-tin oxide (IZTO) and aluminum (Al) were selected as TCE materials. In case of IZTO nanoparticles, composition ratios of In, Zn and Sn is 8:1:1 were synthesized. Size of the synthesized IZTO nanoparticles were less than 10 nm, and specific surface areas were about $90m^2/g$ indicating particle sizes are very fine. Also, the IZTO nanoparticles were well crystallized with (222) preferred orientation despite it was synthesized at the lowered temperature of $300^{\circ}C$. Composition ratios of In, Zn and Sn were very uniform in accordance with those as designed. Meanwhile, Al was deposited onto glass by sputtering in a vacuum chamber for mesh architecture. The Al was well deposited onto the glass, and no pore was observed from the Al surface. The sheet resistance of Al on glass was about $0.3{\Omega}/{\square}$ with small deviation of $0.025{\Omega}/{\square}$, and adhesion was good on the glass substrate since no pelt-off part of Al was observed by tape test. If the Al mesh is combined with ink coated layer which is consistent of IZTO nanoparticles, it is expected that the good and reliable metal mesh architecture for TCE will be formed.

• Applied Chemistry for Engineering
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• v.9 no.1
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• pp.52-57
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• 1998

The effects of additives such as zinc compounds in 4M KOH electrolyte of Al-air cell have been studied. Zinc compounds in electrolyte increased hydrogen evolution overpotential and TPC(tripotasium citrate)/CaO formed fine film on aluminum surface, and these additives decreased hydrogen evolution rate and corrosion rate of aluminum. These additives shifted the OCP in the positive direction on high purity aluminum(purity, 99.999%) and in the negative direction on Al No 1050(purity,99.5%). Addition of two or more additives resulted in the prevention or the reduction of corrosion rate and hydrogen evolution at OCP. As the overpotential on Al electrode increased, the hydrogen evolution rate decreased and the utilization of aluminum increased. At high current density$(>100mA/cm^2)$, TPC/CaO/ZnO additives increased the utilization of high purity aluminum up to that of aluminum alloys containing indium, gallium and thallium.

• Restorative Dentistry and Endodontics
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• v.16 no.2
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• pp.189-196
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• 1991

The purpose of this study was to observe the inital acidity of zinc phosphate cements(Confit and Super Cem), poly carboxylate cement(Unident and Poly F), zinc oxide engenol cement(Stailine Super EBA) and g1ass ionomer cement(Fuji ionomer) Each cement was manuplated in accordance with each manufacturer's direction. All cements were mixed at the room temperature of $23^{\circ}{\pm}$, $5^{\circ}C$, and the electrode of pH meter(Ionanalyzer) was inserted in the mixed cement, and the acidity of cement were measured for 20 minutes from begining of cement mixing at $23^{\circ}C$ and $37^{\circ}C$ Results were as follows 1. The acidity of all cements ranges from pH 3, 5 to 4, 5 at 2 minutes after the start of mixing 2. The value of pH at $23^{\circ}C$ was higher than the value of pH at $37^{\circ}C$ in all cements. 3. As the time elapsed, the pH in all cements rose. The 20 minutes after the start of mixing the range of acidity was from pH 5 to pH 6 except Poly F. 4. In polycarboxylate cement, the different value of acidity at $23^{\circ}C$ and $37^{\circ}C$ was greatest. 5. The curve pattern of acidity in Unident was similar to that in Poly F cement The pH value of Unident was higher then that of Poly F, and value of pH in the curve pattern of acidity in Confit were similar to those in Super cement.

• Journal of Information Display
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• v.10 no.4
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• pp.149-157
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• 2009

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.479-479
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• 2011

Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

• Journal of the Korean Chemical Society
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• v.38 no.2
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• pp.146-150
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• 1994

The simultaneous determination of Zn, Cd, Pb and Cu in 1.000%(w/v) tungsten matrix by differential pulse anodic stripping voltammetry at a hanging mercury drop electrode has been studied. Tartaric acid(pH=5.00) was used as a supporting electrolyte. Optimum analytical conditions were found that the deposition potential was -1.2 volt(vs. Ag/AgCl), the deposition time was 3 minutes. The linear concentration range of all trace metal ions in 1.000%(w/v) tungsten matrix were 10 to 50 ppb. And the detection limit(3${\sigma}$) of zinc, cadmium, lead and copper were 1.25, 1.02, 1.69, and 1.02 ppb respectively. This method was superior to the ICP-AES method which detection limits(3${\sigma}$) in 1.000%(w/v) tungsten matrix were 8.0, 5.0, 120 and 5 ppb respectively.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.145-159
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• 2021

Light soaking (LS) stability in polymer solar cells (PSCs) has always been a challenge to achieve due to unstable photoactive layer-electrode interface. Especially, the electron transport layer (ETL) and photoactive layer interface limits the LS stability of PSCs. Herein, we have modified the most commonly used and robust zinc oxide (ZnO) ETL-interface using an organic dye molecule and a co-adsorbent. Power conversion efficiencies have been slightly improved but when these PSCs were subjected to long term LS stability chamber, equipped with heat and humidity (45℃ and 85% relative humidity), an outstanding stability in the case of ZnO/dye+co-adsorbent ETL containing devices have been achieved. The enhanced LS stability occurred due to the suppressed interfacial defects and robust contact between the ZnO and photoactive layer. Current density as well as fill factors have been retained after LS with the modified ETL as compared to un-modified ETL, owing to their higher charge collection efficiencies which originated from higher electron mobilities. Moreover, the existence of less traps (as observed from light intensity-open circuit voltage measurements and dark currents at -2V) are also found to be one of the reasons for enhanced LS stability in the current study. We conclude that the mitigation ETL-surface traps using an organic dye with a co-adsorbent is an effective and robust approach to enhance the LS stability in PSCs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.