• Journal of the Korean Chemical Society
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• v.31 no.5
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• pp.444-451
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• 1987

The dependence of polarographic parameters on the pressure for the reduction of copper(II), cadmium(II), and zinc(II) complex ions with ethylenediamine, propylenediamine, and diethylenetriamine has been studied. In this study the dropping mercury electrode, the mercury pool electrode, and helix type of platinum wire were used as the working, the reference, and the auxilary electrode, respectively. With increasing the pressure from 1 atmosphere to 1,500 atmospheres, the reduction half-wave potentials of metal complex ions are shifted to the negative values and the diffusion currents become considerably larger, in keeping with the theory on the change of the physical properties of the electrolytic solution such as the density, the viscosity, the dielectric constant, and the electrical conductance, etc. The slope values of the logarithmic plot are increased with increasing the pressure, which indicates the more irreversible reduction. The temperature coefficients of diffusion current observed over the range of the temperature from 25$^{\circ}$C to 35$^{\circ}$C are about two percentage with increasing the pressure, therefore the polarographic reduction under the high pressure is controlled by diffusion. The linear relationships between diffusion current and concentration of metal complex ions are established over all pressure range.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Journal of Information Display
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• v.9 no.3
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• pp.8-11
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• 2008

A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.143-145
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• 2016

In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.63-63
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• 2009

Many researchers have been studied as active and transparent electrode using ZnO (Zinc oxide) inorganic semiconductor material due to their good properties such as wide band-gap and high electrical properties compared with amorphous-Si. In this study, we fabricated ZnO films by the RF magnetron sputtering method at a low temperature for a channel layer in thin-film transistor (TFT) and investigated the characteristics of sputtered ZnO films. Also, the electrical properties of TFT using ZnO channel layer such as field effect mobility(${\mu}$), threshold voltage ($V_{th}$), and $I_{on/off}$ ratio are investigated for the application of the display and electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.275-277
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• 2013

Thin-film transistors(TFTs) with silicon zinc tin oxide(SZTO) channel layer are fabricated by solution-process. The threshold voltage ($V_{th}$) shifted toward positive directly with increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy (VO). As a result, the Si act as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller.

• Journal of Electrical Engineering and Technology
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• v.10 no.2
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• pp.641-646
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• 2015

In this paper, a zinc electrowinning cell is fully optimized to achieve a uniform current distribution at electrode surfaces. To effectively deal with an electromagnetically coupled problem with multi-dimensional design variables, a sampling-based sensitivity approach is combined with a highly tuned multiphysics simulation model. The model involves the interrelation between electrochemical reactions and electromagnetic phenomena so as to predict accurate current distributions in the electrowinning cell. In the sampling-based sensitivity approach, Kriging-based surrogate models are generated in a local window, and accordingly their sensitivity values are extracted. Such unique design strategy facilitates optimizing very complicated multiphysics and multi-dimensional design problems. Finally, ten design variables deciding the electrolytic cell structure are optimized, and then the uniformity of current distribution in the optimized cell is examined through the comparison with existing cell designs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.609-612
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• 2008

Characteristics of indium-zinc-oxide (IZO)-Ag-IZO multilayer grown on a PET substrate were investigated for flexible organic emitting diodes. By inserting very thin Ag layer between amorphous IZO, IZO-Ag-IZO (IAI) multilayer anode exhibited remarkably reduced sheet resistance and high transmittance due to the surface plasmon resonance effect and Ag layer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.