• 제목/요약/키워드: yttria ceramic

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플라즈마 용사된 부분안정화 지르코니아 코팅의 상온 마모거동에 미치는 열처리온도 및 분위기의 영향 (The Effects of the Annealing Temperature and Environments on Room Temperature Wear Behavior of Plasma-Sprayed Partially Stabilized Zirconia Coatings)

  • 김장엽;임대순
    • 한국세라믹학회지
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    • 제31권10호
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    • pp.1176-1180
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    • 1994
  • The sliding wear behavior of the plasma-sprayed zirconia containing 3 mol% yttria was investigated after the annealing at room temperature to 80$0^{\circ}C$ in various concentrations of humid atmosphere as laboratory, humid, dry argon atmosphere. Both of the friction coefficient and the wear loss increased with increasing temperature up to 80$0^{\circ}C$. Surface morphology of the worn samples changed with annealing temperature. The change of monoclinic/tetragonal (m/t) x-ray peak intensity ratio effected the wear behavior. The m/t ratio had maximum value at 20$0^{\circ}C$ and decreased with increased temperature in laboratory and humid atmosphere. In argon atmosphere the m/t ratio had no maximum value and decreased with increasing temperature. At all the annealing temperature humid atmosphere had more the m/t ratio value than any other atmosphere. The change of toughness was showed the inversed result of m/t ratio change. The results indicated that the resudial stress which was induced by the different amount of phase transformation takes a detrimental role in wear behavior.

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부분 및 완전 안정화 지르코니아의 열확산 계수 (Thermal Diffusivity of Partially and Fully Stabilized Zirconia)

  • 이홍림
    • 한국세라믹학회지
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    • 제22권4호
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    • pp.40-46
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    • 1985
  • Thermal diffusivities of zirconia samples partially or fully stabilized by MgO and $Y_2O_3$ were measured b laser-flash method up to 140$0^{\circ}C$ The values of thermal diffusivity decreased as the contents of MgO and $Y_2O_3$ increased due to the phonon scattering effect of defect structure of cubic phase formed. The temperature dependence of thermal diffusivity showed that the thermal diffusivity values decreased due to phono-phonon scattering as the temperature increased. The difference in thermal diffusivity was observed on cooling after heating up to 140$0^{\circ}C$ for magnesia stabi-lized zirconia samples but not for yttria stabilized zirconia samples.

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YSZ 박막의 성장속도와 특성에 미치는 전기화학증착의 조건의 영향(II) (Influences of Electrochemical Vapor Deposition Conditions on Growth Rate ad Characteristics of YSZ Thin films(II))

  • 박동원;전치훈;김대룡
    • 한국세라믹학회지
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    • 제33권3호
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    • pp.355-361
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    • 1996
  • Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates. Y2O3 mol% of thin film was linearly increased with yttrium mole fraction of vapor phase. As yttrium mole fraction(Zyc13=0.18) increased dense and faceted thin films were enhanced. However as the yttrium mole fraction (Zyc13=0.04) decreased porous thin films with monoclinnic phase prevailed. With increasing pressure difference of substrate sides penetration depth decreased porosity and amount of monoclinic phase in the films increased.

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저온 고체산화물연료전지 구현을 위한 다층 나노기공성 금속기판의 제조 (Development of Metal Substrate with Multi-Stage Nano-Hole Array for Low Temperature Solid Oxide Fuel Cell)

  • 강상균;박용일
    • 한국세라믹학회지
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    • 제42권12호
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    • pp.865-871
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    • 2005
  • Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.

YSZ 박막의 성장속도와 특성에 미치는 전기화학증착 조건의 영향(I) (Influences of Electrochemical Vapor Deposit Conditions Growth Rate and Characteristics of YSZ Thin Films (I))

  • 박동원;전치훈;강대갑;최병진;김대룡
    • 한국세라믹학회지
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    • 제33권1호
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    • pp.25-34
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    • 1996
  • Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates which were fabricated by different substrate thickness and porosity. Film growth rates decreased with increase on the substrate thickness and porosity and obeyed a parabolic rate law. Activa-tion energy calculated from the parabolic rate onstants was 69.9 kcal/mol. With increase on the deposition time, monoclinic phase was appeared and then disappeared. YSZ penetrated deeply into substrates when the EVD temperature decreased. Electrical conductivity of the films was 0.09 S/cm at 100$0^{\circ}C$ similar to the value of YSZ single crystal.

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[(ZrO2)$_{1-x}$(CeO2)$_x$$_{0.92}$(Y$_2$O$_3$)$_{0.08}$ 고용체의 전기전도도 (Electrical Conductivities of [(ZrO2)$_{1-x}$(CeO2)$_x$]$_{0.92}$(Y$_2$O$_3$)$_{0.08}$ Solid Solution)

  • 이창호;최경만
    • 한국세라믹학회지
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    • 제35권12호
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    • pp.1323-1328
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    • 1998
  • The electrical conductivities of the yttria (8mol%) stabilizedzirconia-ceria solid solutions were measured as a function of oxygen partial between 80$0^{\circ}C$ and 100$0^{\circ}C$ using 4-probe d.c. method Under pure oxygen atmosphere the oxygen ionic conductivity of CeO2-ZrO2 decreased with the concentration of CeO2 Under reducing condition electronic conduction due to the redox equilibrium of Ce ion was observed. Total ionic and electronic conductivities fitted by a defect model enabled to determine the electronic transference number(tei) which increased with the concentration of CeO2 and with the degree of reduction.

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전기화학증착법에 의한 $CeO_2$계 고체전해질 박막의 제조 (Preparation of $CeO_2$ Based Solid Electrolyte Thin Films by Electrochemical Vapor Deposition)

  • 박동원;김대룡
    • 한국세라믹학회지
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    • 제34권10호
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    • pp.1067-1073
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    • 1997
  • The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $\alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{\circ}C$. As deposition temperature (above 110$0^{\circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$\times$10-2 was about 0.097 S/cm at 104$0^{\circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.

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플라즈마사용법에 의한 $ZrO_2-Y_2O_3$ 코팅의 고온에서의 마모 (High Temperature Wear of Plasma-Sprayed $ZrO_2-Y_2O_3$ Coatings)

  • 김장엽;임대순;안효석
    • 한국세라믹학회지
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    • 제30권12호
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    • pp.1059-1065
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    • 1993
  • The sliding wear behavior of the plasma sprayed zirconia containing 8wt% yttria was investigated over a range of room temperature to 800℃. Both of the friction coefficient and the wear loss increased reaching its maximum at about to 499℃. and then decreased again with increasing temperature up to 800℃. The worn surface at elevated temperature were observed and analyzed by scanning electron microscopy and X-ray diffractometer to study the mechanisms of high temperature wear behavior. Surface morphology of the worn samples changes with temperature. Monoclinic (m)/tetragonal (t) x-ray peak intensity ratio of wear debris and worn surface decreased with increasing temperature. Non-transformable tetragonal (t') to metastable tetragonal (t) phase transformation of worn surface increased with increasing temperature. The results indicate that dehumidification and above phase changes are contributing to the high temperature wear behavior of the plasma sprayed ZrO2-Y2O3 coatings.

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Skull법에 의한 Cubic Zirconia 단결정 성장 (Single Crystals Growth of Cubic Zirconia by Skull Method)

  • 김석호;최종건;오근호;조영환;김영준;오봉인;강원호
    • 한국세라믹학회지
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    • 제25권2호
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    • pp.161-167
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    • 1988
  • Yttria-Stabilized Cubic Zirconia Crystals with Various Y2O3 amounts (6-15mol%) were grown by the Skull melting technique. The modeling of the nucleation at the Skull bottom and the best growth condition were studied. The abrupt changes in generator heating Power and lowering rate of crucible caused the dendritic growth in the grown crystal. The optimum condition of cubic Zirconia single crystals was obtained when the lowering rate was gradually increased. The effect of Y2O3 amounts on the perfection adn the color of the grown crystal were determined. The darkish color generated in the crystals added Y2O3 amounts over 12mol% was eliminated by the annealing in air at 1200$^{\circ}C$ for 24hrs.

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Absence of Distinctively High Grain-Boundary Impedance in Polycrystalline Cubic Bismuth Oxide

  • Jung, Hyun Joon;Chung, Sung-Yoon
    • 한국세라믹학회지
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    • 제54권5호
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    • pp.413-421
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    • 2017
  • In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.