• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.81-82
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• 2008

하이브리드 코팅 시스템을 이용하여 $CrMoC_xN_{1-x}$ 박막을 AISI D2와 실리콘 웨이퍼 모재 위에 증착하였다. 박막 내 탄소 함량은 $CH_4/(CH_4+N_2)$ 가스 유량 증가에 비례하여 증가했다. 탄소 함량이 0.33일 때 44GPa의 최대강도 및 -4.4GPa의 잔류응력을 나타내었다. CrMoN 박막의 평균 마찰계수는 0.42이지만, 탄소함량을 증가함에 따라 0.31까지 감소 하였다. 이것은 박막 표면과 스틸볼 사이에서 탄소가 풍부한 층이 형성되어 일종의 고체윤활제 역할을 했기때문이다. 박막의 미세조직은 X-ray diffraction, Scanning electron microscopy, 그리고 X-ray photoelectron spectroscopy를 이용하여 분석하였다.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.18-22
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• 2006

Effects of V substitution of Fe on the magnetic properties of $Fe_3O_4$ have been investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), conversion electron Mossbauer spectroscopy (CEMS), and vibrating sample magnetometry (VSM) measurements on sol-gel-grown films. XRD data indicates that the $V_xFe_{3-x}O_4$ films maintain cubic structure up to x=1.0 with little change of the lattice constant. Analyses on V 2p and Fe 2p levels of the XPS data indicate that V exist as $V^{3+}$ mostly in the $V_xFe_{3-x}O_4$ films with the density of $V^{2+}$ ions increasing with increasing V content. Analyses on the CEMS data indicate that $V^{3+}$ ions substitute tetrahedral $Fe^{3+}$ sites mostly, while $V^{2+}$ ions octahedral $Fe^{2+}$ sites. Results of room-temperature VSM measurements on the films reveal that the saturation magnetization for the x=0.14 sample is larger than that of $Fe_3O_4$, while it becomes smaller than that of $Fe_3O_4$ for $x{\geq}0.5$. The coercivity of the $V_xFe_{3-x}O_4$ films is found to increase with x, attributed to the increase of anisotropy by the substitution of $V^{2+}(d^3)$ ions into the octahedral sites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.634-639
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• 2001

We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.911-918
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• 1993

X-ray photoelectron spectroscopy(XPS) has been empolyed to investigate the structure of PbO-Bi2O3-Ga2O3 glasses. XPS OIS spectra recorded from binary PbO-Ga2O3 glasses clearly showed the presence of two peacks due to bridging and non-bridging oxygens, respectively. Gaussin best-fit deconvolution of the OIS peaks suggested there are substaintial amount of non-bridging oxygens in the structure. Therefore, in addition to the glassforming and charge compensating roles of PbO as suggested from the previous works, role of PbO as network modifiers needs to be considered. Addition of Bi2O3 to binary glasses resulted in the rapid decrease in the amount of non-bridging oxygens as well as in values of FWHM (Full Width at the Half Maximum intensity). It is believed that Bi2O3 form distorted BiO6 octahedra and therefore, work as intermediates. Infrared spectra also suggested that Ga2O3 behave as network-formers in the form of GaO4- tetrahedra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.177-178
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• 2007

본 연구에서는 MIM (Metal-Insulator-Metal) capacitor의 유전 물질로 사용되는 $Ba_xTi_yO_z$(BTO) 박막의 식각 특성을 고찰하였다. $Cl_2$/Ar 혼합가스를 이용하여 Inductively Coupled Plasma(ICP)에서 BTO 박막을 식각하였고, 식각된 BTO박막의 표면을 X-ray photoelectron spectroscopy(XPS) 분석하였다. BTO박막의 식각 속도는 Ar이 80%인 식각 조건에서 31.7nm/min의 식각 속도를 추출하였고, 동시에 Pt박막에 대한 높은 선택비를 얻었다. X-ray photoelectron spectroscopy (XPS) 분석 결과로부터 표면 반응을 조사하여, 식각 기구를 고찰하였다.

• Journal of Adhesion and Interface
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• v.7 no.3
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• pp.26-33
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• 2006

Nylon fabrics were corona treated with different current intensity (5, 10, 15, 20 A) and feeding speed (5, 10, 15 m/min). We confirmed the change of nylon fabrics surface using X-ray diffraction apparatus, scanning electron microscopy (SEM) and X-ray photoelectron spectrometer (ESCALAB). And the change of physical properties through measuring the tensile strength, tear strength, bonding and wet bonding strength. Thermosetting reactive polyurethane hot melt adhesive was used in the adhesion of nylon fabrics. Functional groups were introduced on nylon fabric surface by treating the fabrics in air atmosphere with corona discharge, and the result adhesion was improved. Bonding strength of the nylon fabric treated with corona was increased with increasing current intensity and decreasing feeding speed.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.139-139
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• 1999

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.768-771
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• 2005

The deposition of silicon nitride ($SiN_x$) thin films was carried out on $SiO_2/Si$ substrate at room temperature by reactive dc magnetron sputtering. The analysis of deposited $SiN_x$ films using x-ray photoelectron spectroscopy indicated that the composition of $SiN_x$ films was Si-rich. The deposited $SiN_x$ thin films were annealed by varying annealing temperature and time. X-ray diffraction (XRD) analysis was performed in order to examine the crystallization of Si in $SiN_x$ thin films. The optical and electrical properties of $SiN_x$ thin films were measured for the observation of Si nanodot. As a result, we observed the XRD peaks that might be the Si crystals. As the annealing time and annealing temperature increased, the photoluminescence intensity of $SiN_x$ films gradually increased. The capacitance-voltage characteristics of $SiN_x$ film measured before and after annealing indicated that the trap effect of electrons or holes occurred due to the existence Si nanodots in the $SiN_x$ thin films.

• Clean Technology
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• v.18 no.4
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• pp.432-439
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• 2012

The electrocatalytic oxidation of CO was studied using carbon-supported 20 wt% PtRu (PtRu/C) catalysts, which were prepared with different Pt : Ru atomic ratios from 7 : 3 to 3 : 7 using a colloidal method combined with a freeze-drying procedure. The bimetallic PtRu/C catalysts were characterized by various physicochemical analyses, including X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). CO stripping voltammetry measurements indicated that the addition of Ru with a Pt catalyst significantly improved the electrocatalytic activity for CO electrooxidation. Among the tested catalysts, the $Pt_5Ru_5/C$ catalyst had the lowest onset potential (vs.Ag/AgCl) and the largest CO EAS. Structural modification via lattice parameter change and electronic modification in the unfilled d band states for Pt atoms may facilitate the electrooxidation of CO.