• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.329-333
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• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.132-132
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• 2013

Colloidal synthesis of nanoparticles with well-controlled size, shape, and composition, together with development of in situ surface science characterization tools, such as ambient pressure X-ray photoelectron spectroscopy (APXPS), has brought new opportunities to unravel the surface structure of working catalysts. Recent studies suggest that surface oxides on transition metal nanoparticles play an important role in determining the catalytic activity of CO oxidation. In this talk, I will outline the recent studies on the influence of surface oxides on Rh, Pt, Ru and Co nanoparticles on the catalytic activity of CO oxidation [1-3]. Transition metal nanoparticle model catalysts were synthesized in the presence of poly(vinyl pyrrolidone) polymer capping agent and deposited onto a flat Si support as two-dimensional arrays using the Langmuir-Blodgett deposition technique. APXPS studies exhibited the reversible formation of surface oxides during oxidizing, reducing, and CO oxidation reaction [4]. General trend is that the smaller nanoparticles exhibit the thicker surface oxides, while the bigger ones have the thin oxide layers. Combined with the nature of surface oxides, this trend leads to the different size dependences of catalytic activity. Such in situ observations of metal nanoparticles are useful in identifying the active state of the catalysts during use and, hence, may allow for rational catalyst designs for practical applications. I will also show that the surface oxide can be engineered by using the simple surface treatment such as UV-ozone techniques, which results in changing the catalytic activity [5]. The results suggest an intriguing way to tune catalytic activity via engineering of the nanoscale surface oxide.

• Journal of Powder Materials
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• v.22 no.2
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• pp.116-121
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• 2015

$WS_2$-W-WC embedded carbon nanofiber composites were fabricated by using electrospinning method for use in high-performance supercapacitors. In order to obtain optimum electrochemical properties for supercapacitors, $WS_2$ nanoparticles were used as precursors and the amounts of $WS_2$ precursors were controlled to 4 wt% (sample A) and 8 wt% (sample B). The morphological, structural, and chemical properties of all samples were investigated by means of field emission photoelectron spectroscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. These results demonstrated that the embedded phases of samples A and B were changed from $WS_2$ to $WS_2$-W-WC through carbothermal reaction during carbonization process. In particular, sample B presented high specific capacitance (~119.7 F/g at 5 mV/s), good high-rate capacitance (~60.5%), and superb cycleability. The enhanced electrochemical properties of sample B were explained by the synergistic effect of the using 1-D structure supports, increase of specific surface area, and improved conductivity from formation of W and WC phases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.472-476
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• 1998

The surface reactions of silica film($SiO_2-P_2O_5-B_2O_3-GeO_2$) with fluorocarbon plasma has been studied by using angle -resolved x-ray photoelectron spectroscopy(XPS). It has been confirmed that residual carbon consists of C-C and C-CFx bonds and fluorine mainly binds silicon in the case of etched silica by using $CF_4$ gas plasma. The surface reaction of silica with various fluorocarbon gases, such as $CF_4,C_2F_6 and CHF_3$ were investigated. XPS results showed that though the etching gases were changed, the elements and binding states of the residual layers on the etched silica by using various fluorocarbon gas plasma were nearly the same . This seems to be due to the high volatility of byproducts, that is, $SiF_4 and CO_2$ etc..

• KSTLE International Journal
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• v.4 no.2
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• pp.56-59
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• 2003

Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a ${B}_4$C target with Ar as processing gas. Various amounts of methane gas (${CH}_4$) were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that ${CH}_4$addition to Ar processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of ${CH}_4$gas component from 0 to 1.2 vol %. By adding a sufficient amount of ${CH}_4$(1.2 %) in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.594-597
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• 2002

Silicon Oxynitride(SiON) thick films on p-type silicon(100) wafers have obtained by using plasma-enhanced chemical vapor deposition from SiH$_4$ , N$_2$O and N$_2$. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4620 to 1.5312. A high deposition power of 180 W leads to deposition rates of up to 5.92${\mu}$m/h. The influence of the deposition condition on the chemical composition was investigated using X-ray photoelectron spectroscopy. After deposition of the SiON thick films, the films were annealed at 1050$^{\circ}C$ in a nitrogen atmosphere for 2 h to remove absorption band near 1.5${\mu}$m.

• Carbon letters
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• v.10 no.4
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• pp.314-319
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• 2009

The surface treatment effects of reinforcement filler were investigated based on the dynamic mechanical properties of mutiwalled carbon nanotubes (MWCNTs)/epoxy composites. The as-received MWCNTs(R-MWCNTs) were chemically modified by direct oxyfluorination method to improve the dispersibility and adhesiveness with epoxy resins in composite system. In order to investigate the induced functional groups on MWCNTs during oxyfluorination, X-ray photoelectron spectroscopy was used. The thermo-mechanical property of MWCNTs/epoxy composite was also measured based on effects of oxyfluorination treatment of MWCNTs. The storage modulus of MWCNTs/epoxy composite was enhanced about 1.27 times through oxyfluorination of MWCNTs fillers at $25^{\circ}C$. The storage modulus of oxyfluorinated MWCNTs (OF73-MWCNTs) reinforced epoxy composite was much higher than that of R-MWCNTs/epoxy composite. It revealed that oxygen content led to the efficient carbon-fluorine covalent bonding during oxyfluorination. These functional groups on surface modified MWCNTs induced by oxyfluorination strikingly made an important role for the reinforced epoxy composite.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.363-367
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• 2015

This paper reports on thermally adjusted graphene oxide (GO) as the hole transport layer (HTL) for organic light-emitting diodes (OLEDs). GO is generally not suitable for HTL of OLEDs because of intrinsic specific resistance. In this paper, the specific resistance of GO is adjusted by the thermal annealing process. The optimum specific resistance of HTL is found to be $10^2{\Omega}{\cdot}m$, and is defined by the maximum current efficiency of OLEDs, 2 cd/A. In addition, the reasons for specific resistance change are identified by x-ray photoelectron spectroscopy (XPS). First, the XPS results show that several functional groups of GO were detached by thermal energy, and the amount of epoxide changed substantially following the temperature. Second, the full width at half maximum (FWHM) of the C-C bond decreased during the process. That means the crystallinity of the graphene improved, which is the scientific basis for the change in specific resistance.

• Journal of Integrative Natural Science
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• v.9 no.4
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• pp.223-227
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• 2016

The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron co-sputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.