• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.125-132
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• 2017

Vehicular safety service reduces traffic accidents and traffic congestion by informing drivers in advance of threats that may occur while driving using vehicle-to-vehicle (V2V) communications in a wireless environment. For vehicle safety services, every vehicle must broadcasts a Basic Safety Message(BSM) periodically. In congested traffic areas, however, network congestion can easily happen, reduce the message delivery ratio, increase end-to-end delay and destabilize vehicular safety service system. In this paper, to solve the network congestion problem in vehicle safety communications, we approximate the relationship between channel busy ratio and the number of vehicles and use it to estimate the total network congestion. We propose a new context-aware transmit power control algorithm which controls the transmission power based on total network congestion. The performance of the proposed algorithm is evaluated using Qualnet, a network simulator. As a result, the estimation of total network congestion is accurately approximated except in specific scenarios, and the packet error rate in vehicle safety communication is reduced through transmit power control.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.53-59
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• 2015

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.340.2-340.2
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• 2014

최근 비정질 산화물 반도체는 가시광 영역에서의 투명도와 낮은 공정 온도, 그리고 높은 Field-effect mobility로 인해 Thin film transistors의 Active channel layer의 재료로 각광 받고 있다. ZnO, IZO, IGO, ITGO등의 많은 산화물 반도체들이 TFT의 채널층으로의 적용을 위해 활발히 연구되고 있으며, 특히 비정질 IGZO는 비정질임에도 불구하고 Mobility가 $10cm^2/Vs$ 정도로 기존의 a-Si:H 보다 높은 Mobility 특성을 나타내고 있어 대화면 디스플레이와 고속 구동을 위한 LCD에 적용 할 수 있으며 또한 낮은 공정 온도로 인해 플렉서블 디스플레이에 응용될 수 있다는 장점이 있다. 우리는 RF magnetron sputtering법으로 증착한 비정질 IGZO TFT(Thin Film Transistors)의 전기적 특성과 IGZO 박막의 특성에 미치는 RF power의 영향을 연구하였다. 제작한 TFTs의 Active channel layer는 산소분압 1%, Room temperature에서 RF power별(50~150 W)로 Si wafer 기판 위에 30nm로 증착 하였고 100 nm의 $SiO_2$가 절연체로 사용되었다. 또한 박막 특성을 분석하기 위해 같은 Chamber 분위기에서 100 nm로 IGZO 박막을 증착하였다. 비정질 IGZO 박막의 X-ray reflectivity(XRR)을 분석한 결과 RF Power가 50 W에서 150 W로 증가 할수록 박막의 Roughness는 22.7 (${\AA}$)에서 6.5 (${\AA}$)로 감소하고 Density는 5.9 ($g/cm^3$)에서 6.1 ($g/cm^3$)까지 증가하는 경향을 보였다. 또한 제작한 IGZO TFTs는 증착 RF Power가 증가함에 따라 Threshold voltage (VTH)가 0.3~4(V)로 증가하는 경향을 나타내고 Filed-effect mobility도 6.2~19 ($cm^2/Vs$)까지 증가하는 경향을 보인다. 또한 on/off ratio는 모두 > $10^6$의 값을 나타내며 subthreshold slope (SS)는 0.3~0.8 (V/decade)의 값을 나타낸다.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1897-1904
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• 2019

Three-layer back propagation network (BPN) and genetic neural network (GNN) were developed in this study to predict the flow boiling heat transfer coefficient (HTC) in conventional and small-diameter channels. The GNN has higher precision than BPN (with root mean square errors of 17.16% and 20.50%, respectively) and other correlations. The inputs include vapor quality x, mass flux G, heat flux q, diameter D and physical parameter φ, and the predicted flow boiling HTC is set as the outputs. Influences of input parameters on the flow boiling HTC are discussed based on the trained GNN: nucleate boiling promoted by a larger saturated pressure, a larger heat flux and a smaller diameter is dominant in small channels; convective boiling improved by a larger mass flux and a larger vapor quality is more significant in conventional channels. The HTC increases with pressure both in conventional and small channels. The HTC in conventional channels rises when mass flux increases but remains almost unaffected in small channels. A larger heat flux leads to the HTC growth in small channels and an increase of HTC was observed in conventional channels at a higher vapor quality. HTC increases inversely with diameter before dry out.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.7
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• pp.112-117
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• 2003

The brazing of copper alloys and duplex stainless steels is an indispensable manufacturing technology for thrust chambers with regenerative cooling. For setting up the optimized brazing conditions, C18200 copper alloy plate with machined cooling channels and S31803 stainless steel plate are brazed with AMS4764 filler metals of which thickness is 50${\mu}m$ and 80${\mu}m$ They are tested by X-ray radiography, strength/leakage and fracture tests, and fracture surface inspection. The results obtained by the suggested conditions are that the specimen brazed with filler metal thickness of 50${\mu}m$ has good strength properties and brazed zone. However, the specimen with filler metal thickness of 80${\mu}m$ has the brazed zone with cooling channel obstruction and enlargement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.11-11
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• 2007

1차원 구조체인 반도체 나노선은 앙자제한효과 (quantum confinement effect) 등을 이용하여 고밀도/고효율의 소자 개발이 기대되고 있다. GaN는 상온에서 3.4 eV의 밴드갭 에너지를 갖는 III-V 족 반도체 재료로써 박막의 경우 광전자 소자로 폭넓게 응용되고 있다. 최근 GaN 나노선의 합성에 성공하면서 발광소자, 고효율의 태양전지, HEMT 등으로의 응용을 위한 많은 연구가 활발히 이루어지고 있다. 하지만, 아직까지 GaN 나노선의 전기적 특성을 제어하는 기술은 확립되지 않고 있다. 본 연구에서는 Vapor solid (VS)법을 이용하여 GaN 나노선을 합성하였으며, GaN 분말과 함께 $Mg_2N_3$ 분말을 첨가하여 (Ga,Mg)N 나노선을 성공적으로 합성하였다. 합성시에 GaN와 Mg 소스간의 거리 변화를 통해 Mg 도핑농도를 제어하고자 하였다. 이 같은 방법으로 합 된 (Ga,Mg)N 나노선의 Mg 도핑농도에 따른 결정학적 특성을 알아보고, (Ga,Mg)N 나노선을 이용하여 소자를 제작한 후 그 전기적 특성을 살펴보고자 한다. X-ray diffraction (XRD)과 high-resolution transmission electron microscopy (HRTEM), EDX를 이용하여 합성된 나노선의 결정학적 특성과 Mg의 도핑 농도를 확인하였다. Photo lithography와 e-beam lithography법을 이용하여 (Ga,Mg)N 나노선 field-effect transistor (FET)를 제작하고, channel current-drain voltage ($I_{ds}-V_{ds}$) 와 channel current-gate voltage ($I_{ds}-V_g$) 측정을 통해 (Ga,Mg)N 나노선이 도핑 농도에 따라 n형에서 p형으로 전기적 특성이 변화함을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.467-468
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of ${\sim}60{\Omega}/{\square}$. The maximum saturation current of our P3HT-based TFT was about $15{\mu}A$ at a gate bias of -40V showing a high field effect mobility of $0.05cm^2/Vs$ in the dark, and the on/off current ratio of our TFT was about $5{\times}10^5$. It is concluded that jointly adopting IZO for the S/D electrode and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.10-19
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• 1986

This is the last part of the four-part describing the development of a packet-switched computer communication network named the KORNET. In this paper we describe the design and implementation of the packet assembler/dissassembler (PAD) protocol for the asynchronous channel service, and of the network management softwares. The line processing module-B(LPMB) system supporting the asynchronous line includes a PAD protocol, a packet mode DTE/DCE protocol converting to the X.25 protocol, and the asynchronous receiver/transmitter(ART) software. The network management software is operated in master central processing module(MCPM) which includes virtual circuit management (VCM) managing the user channel, the routing management and the high level protocol for communication between the network management center (NMC) and the network node processor(NNP). In this paper, the design, implementation and operation of the softwares for the above service functions will be described in detail.

• Journal of the Korean Society of Radiology
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• v.10 no.1
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• pp.45-51
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• 2016

The purpose of this study was tried to remove the noise and improve the spatial resolution in the computed tomography (CT) by using anisotropic 2-dimensional (2D) diffusion based filter. We used 4-channel multi-detector CT and american association of physicists in medicine (AAPM) phantom was used for CT performance evaluation to evaluate the image quality. X-ray irradiation conditions for image acquisition was fixed at 120 kVp, 100 mAs and scanned 10 mm axis with ultra-high resolution. The improvement of anisotropic 2D diffusion filtering that we suggested firstly, increase the contrast of the image by using histogram stretching to the original image for 0.4%, and multiplying the individual pixels by 1.2 weight value, and applying the anisotropic diffusion filtering. As a result, we could distinguished five holes until 0.75 mm in the original image but, five holes until 0.40 mm in the image with improved anisotropic diffusion filter. The noise of the original image was 46.0, the noise of the image with improved anisotropic 2D diffusion filter was decreased to 33.5(27.2%). In conclusion improved anisotropic 2D diffusion filter that we proposed could remove the noise of the CT image and improve the spatial resolution.