• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.815-818
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• 2003

New sensing and writing schemes for a magneto-resistive random access memory (MRAM) with a twin cell structure are proposed. In order to enhance the cell reliability, a scheme of the low voltage precharge is employed to keep the magneto resistance (MR) ratio constant. Moreover, a common gate amplifier is utilized to provide sufficient voltage signal to the bit line sense amplifiers under the small MR ratio structures. To enhance the writing reliability, a current mode technique with tri-state current drivers is adopted. During write operations, the bit and /bit lines are connected. And 'HIGH' or 'LOW' data is determined in terms of the current direction flowing through the MTJ cell. With the viewpoint of the improved reliability of the cell behavior and sensing margin, HSPICE simulations proved the validity of the proposed schemes.

• Journal of IKEEE
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• v.17 no.3
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• pp.260-266
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• 2013

The open bit line is vulnerable to noise compared to the folded bit line when read/write for the DRAM. According to the increasing DRAM densities, the core circuit operating conditions is exacerbated by the noise when it comes to the open bit line 6F2(F : Feature Size) structure. In this paper, the interference effects were analyzed by the data patterns between the bit line by experiments. It was beyond the scope of existing research. 68nm Tech. 1Gb DDR2, Advan Tester used in the experiments. The noise effects appears the degrade of internal operation margin of DRAM. This paper investigates sense amplifier power line splits by experiments. The noise can be improved by 0.2ns(1.3%)~1.9ns(12.7%), when the sense amplifier power lines split. It was simulated by 68nm Technology 1Gb DDR2 modeling.

• Journal of Science of Art and Design
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• v.6
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• pp.100-118
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• 2004

Mi Fu, who was associated with Wen Tong, invented the Mijoem Technique (Dotting Technique) in landscape painting with his son Mi Youren. His landscapes, which referred to Dong Yuan's landscape technique and was inspired by the scenery of Jiang Nan, illustrate the mood of a cloud-covered foggy landscape by liberally applying dots with ink. 'Chunsansoesong' which is considered done by Mi Fu, clearly shows the virtues of ink painting's spreading, absorbing and omission techniques. This simply rendered landscape - whose mountains and hills are wrapped in both clouds and fog - displays exquisiteness by using small dots. In 'Chunsansoesong', the characteristics of Song painting: a 'vital energy', a 'poem within the painting', a 'beauty of margin', a 'beauty of one brush stroke, and a 'display of inner meanings' are implicatively expressed This is because it's simple but connotatively delineative. There is the characteristic of a 'poem within the painting' when analyzing the both fragmented and combined 'Chunsansoesong'. The margins support an imaginative space as the height of the mountains get higher which result in deepening both the width and depth of the landscape space. Furthermore, the soft thickness of ink, clouds, pine trees, and pavilion evoke delineative feelings and a desire to write a poem Every thing in 'Chunsansoesong' is enveloped in both clouds and fog regardless of its distance and this delivers boundless feelings of Oriental mystery and urges a desire for 'writing a poem'. The pavilion that faces the cloud and fog-bound mountains especially flames the poetic urge further by inducing viewers' poetic imaginations. As we reviewed above, 'Chunsansoesong's cloud and fog-covered landscape is a good example that clearly showcases the characteristics of a 'Poem within the Painting'.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.76-80
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• 2014

Dual-gate PCRAM which unify capacitor-less DRAM and NVM using a PCM instead of a typical SONOS flash memory is proposed as 1 transistor. $VO_2$ changes its phase between insulator and metal states by temperature and field. The front-gate and back-gate control NVM and DRAM, respectively. The feasibility of URAM is investigated through simulation using c-interpreter and finite element analysis. Threshold voltage of NVM is 0.5 V that is based on measured results from previous fabricated 1TPCM with $VO_2$. Current sensing margin of DRAM is 3 ${\mu}A$. PCM does not interfere with DRAM in the memory characteristics unlike SONOS NVM. This novel unified dual-gate PCRAM reported in this work has 1 transistor, a low RESET/SET voltage, a fast write/erase time and a small cell so that it could be suitable for future production of URAM.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.32-33
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• 2006

As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1426-1427
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• 2006

Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1329-1330
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• 2007

Phase-change random access memory(PRAM) has many advantages compare with the existing memory. For example, fast programming speed, low programming voltage, high sensing margin, low power consume and long cyclability of read/write. Though it has many advantages, there are some points which must be improved. So, we invented and studied new constitution of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. In this paper, we studied in order to make set operation time and reset operation voltage reduced. In the present work, by alloying Sb in $Ge_{1}Se_{1}Te_{2}$. we could confirm that improved its set operation time and reset operation voltage. As a result, the method of Sb-alloyed $Ge_{1}Se_{1}Te_{2}$ can be solution to decrease the set operation time and reset operation voltage.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.05a
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• pp.694-699
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• 2002

As the demand for slim laptops requires ion'-height optical disc drives, vibration problems of optical disc drives are of great concern. Additionally, with the decrease of a track width and a depth of focus in high density drives, studies on vibration resonance between mechanical parts become more important. From the vibration point of view, the performance of optical disc drives is closely related with the relative displacement between a disc and an objective lens which is controlled by servo mechanism. In other words, to read and write data properly, the relative displacement between an optical disc and an objective lens should be within a certain limit. The relative displacement is dependent on not only an anti-vibration mechanism design but also servo control capability. Good servo controls can make compensation for poor mechanisms, and vice versa. In a usual development process, robustness of the anti-vibration mechanism is always verified with the servo control of an objective lens. Engineers partially modify servo gain margin in case of a data reading error. This modification cannot correct the data reading error occasionally and the mechanism should be redesigned more robustly. Therefore it is necessary to verify a mechanism with respect to the possible servo gain plot. In this study we propose the experimental verification method far anti-vibration mechanism with respect to the existing servo gain plot. This method verifies axial vibration characteristics of optical disc drives on the basis of transmissibility. Using this method, we verified our mechanism and modified the mechanism for better anti-vibration characteristics.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.12 no.11
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• pp.833-839
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• 2002

As the demand for slim laptops requires low-height optical disc drives, vibration problems of optical disc drives are of great concern. Additionally, with the decrease of a track width and a depth of focus in high density drives, studies on vibration resonance between mechanical parts become more important. From the vibration point of view, the performance of optical disc drives is closely related with the relative displacement between a disc and an objective lens which is controlled by servo mechanism. In other words, to read and write data properly, the relative displacement between an optical disc and an objective lens should be within a certain limit. The relative displacement is dependent on not only an anti-vibration mechanism design but also servo control capability. Good servo controls can make compensation for poor mechanisms, and vice versa. In a usual development process, robustness of the anti-vibration mechanism is always verified with the servo control of an objective lens. Engineers partially modify servo gain margin in case of a data reading error. This modification cannot correct the data reading error occasionally and the mechanism should be redesigned more robustly. Therefore it is necessary to verify a mechanism with respect to the possible servo gain plot. In this study we propose the experimental verification method for anti-vibration mechanism with respect to the existing servo gain plot. Thismethod verifies axial vibration characteristics of optical disc drives on the basis of transmissibility. Using this method, we verified our mechanism and modified the mechanism for better anti-vibration characteristics.