• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.149-149
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• 2010

The effect of titanium (Ti) coating over the surface of carbon nanotubes (CNTs) on field emission characteristics was investigated. Since the work function of CNTs emitter is about 5.0 eV, field emission would be observed at lower voltage if this work function gets lower. Work function of Ti is approximately 4.09eV. Field emission characteristics of as-grown and Ti-coated CNTs were measured in a diode-type configuration. The resultant emission characteristics revealed that thin($50{\AA}$-thick) Ti-coated CNTs could be a better electron emitter with lower emission voltage and higher emission efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.492-492
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• 2014

On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.602-607
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• 2004

This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.611-614
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• 2007

The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.

• 품질경영학회지
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• 제21권1호
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• pp.190-198
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• 1993

A multiple criteria model for the facility layout problem considers both of the quantitative, the cost of the work flow, and qualitative, the closeness rating score, aspect. Rosenblatt, Fortenberry & Cox and Urban have developed multiple criteria models that consider both of the quantitative and qualitative aspect. Fortenberry & Cox's multiplicity model penalizes facilities with undesirable closeness rating and high work flows more than those undesirable closeness rating and low work flow between them to contribute to the objective function regardless of the closeness rating between these facilities. In this paper, it is intended to develops a improved multiple-criteria facility layout model considering the function for maintaning the distance between facilities.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집C
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• pp.333-338
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• 2001

Fault tree is a widely used methodology for analyzing product reliability. The fault trees are usually constructed using the experiences of expert reliability engineers in top-down approaches and have different structures according to each expert's subjectivity. In this work it is tried to find a general method for the fault tree construction based on the function tree that is the result of product function deployment. Based on the function tree, the method has the advantage of resulting an objective fault tree since the faults are defined as the opposite concept of functions. The fault tree construction of this work consists of the following steps: 1) definition of product primary function with the viewpoints of product operation and configuration, 2) construction of functional relation chart using a grouping algorithm, 3) abstraction of functional block diagram according to operation sequences and configuration of a product, 4) construction of function tree for each viewpoint, and 5) construction of fault tree by matching the function tree and simplification of the result.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.246.1-246.1
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• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

• 한국노년학
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• 제31권4호
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• pp.1103-1118
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• 2011

본 연구는 노인의 취업이 신체적 건강, 심리적 기능, 삶의 만족에 어떠한 연관성이 있는지를 검증하고자 하였으며, 65세 이상 노년기에 해당하는 4,165의 대상자(남자 1,739명, 여자 2,426명)를 대상하여 분석에 이용하였다. 신체적 건강에는 일상활동능력, 통증, 장애를 측정하였고, 심리적 기능에는 인지적 기능(뺄셈, 명령시행, 기억력테스트, 소지품용도)과 정서적 어려움을 측정하였으며, 삶의 만족, 근로만족도 및 업무수준을 측정하였다. 연구결과, 성별, 혼인, 학력에 따르는 삶의 만족은 유의한 차이가 나타났으나, 수입이나 종교에 따르는 삶의 만족은 차이가 없는 것으로 나타났다. 취업의 유무에 따라서는 취업한 노인의 신체적 건강과 정신적 기능, 삶의 만족이 더 높은 것으로 나타났다. 또한, 취업한 노인들을 대상으로 성공적 노화 모형을 탐색한 결과, 통증이적고, 인지적 기능이 좋으며, 정서적 어려움이 적을수록 삶의 만족은 높은 것으로 나타났다. 그리고 업무수준이 낮을수록 근로만족도가 높게 나타났고, 근로만족도가 높을수록 삶의 만족은 높은 것으로 나타났다. 아울러 인지적 기능과 정서적 어려움의 상호작용이 나타났고, 이러한 결과를 바탕으로 노년기 삶의 질에 대한 전반적인 국가적 지원 필요성과 복지 향상에 필요한 제도적 제안점을 제시하였다.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.259-263
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• 2005

The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.241-241
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• 2010

New non-volatile memory with high density and high work-function metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, nano-dot layer of FePt with high density and high work-function (~5.2eV) was fabricated as a charge storage site in non-volatile memory, and its electrical characteristics were evaluated for the possibility of non-volatile memory in view of cell operation by Fowler-Nordheim (FN)-tunneling. Here, nano-dot FePt layer was controlled as a uniform single layer with dot size of under ~ 2nm and dot density of ${\sim}\;1.2{\times}10^{13}/cm^2$. Electrical measurements of MOS structure with FePt nano-dot layer shows threshold voltage window of ~ 6V using FN programming and erasing, which is satisfied with operation of the non-volatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with the similar dot density in our experiments. From these results, it is expected that this non-volatile memory using FePt nano-dot layer with high dot density and high work-function can be one of candidate structures for the future non-volatile memory.