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Development of Magnet Position Device for Outdoor Magnet Guidance Vehicle (실외 자기유도 무인운반차를 위한 자기 위치측정 장치 개발)

  • Cho, Hyunhak;Kim, Sungshin
    • Journal of the Korean Institute of Intelligent Systems
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    • v.24 no.3
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    • pp.259-264
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    • 2014
  • This paper is research paper on the MPD(Magnet Position Device) for the outdoor MGV(Magnet /Magnet Gyro Guidance Vehicle). Usually, MGV is used in indoor environment because of a measurement height of the magnet position device. CMPD(Commercial magnet position device) has 30 mm measurement height, so this is suitable structure in indoor environment like to a flat surface. Outdoor environment is an uneven and irregular, So Outdoor MGV must has a suspension. But CMPD is unsuitable for outdoor environment because of a collision with a surface caused by suspension. Thus, measurement height of the outdoor MPD is positively necessary more than 100 mm. So, we suggest the outdoor MPD using analog magnet hall sensor, moving average filter and Characteristic(rate of the magnet hall sensor) function of the localization. Result of the experiments, the proposed Magnet Position Device for the outdoor MGV has localization accuracy 4.31 mm, measurement height 150 mm and width 150 mm and is efficient more than CMPD.

Investigating the Effect of Photoinitiator Types and Contents on the Photocuring Behavior of Photocurable Inks and Their Applications for Etching Resist Inks (광개시제 종류 및 함량에 따른 광경화형 잉크의 광경화 특성과 인쇄회로기판용 에칭 레지스트 소재로의 적용성 연구)

  • Bo-Young Kim;Subin Jo;Gwajeong Jeong;Seong Dae Park;Jihoon Kim;Eui-Keun Choi;Myong Jae Yoo;Hyunseung Yang
    • Applied Chemistry for Engineering
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    • v.34 no.4
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    • pp.444-449
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    • 2023
  • As electronic devices become smaller and more integrated, the demand for manufacturing thin, flexible printed circuit boards (FPCBs) has increased. Although FPCBs are conventionally manufactured by a photolithography method using dry film resist, this process is complicated, and the mask is specifically designed to obtain the precision of the desired circuit line width. In this regard, manufacturing FPCBs with fine patterns through the direct printing method of photocurable inks has gained growing attention. Since the manufacturing process of FPCBs is based on the direct printing method that includes etching and stripping processes utilizing acid and basic chemicals, controlling the adhesion strength, the etching resistance, and the strippability of photocured inks has drawn a lot of attention for the fabrication of fine patterns through photocurable inks. In this study, acrylic ink with various types and contents of the photoinitiator was prepared, and the curing behavior was analyzed. Also, the adhesion strength, etching resistance, and strippability were analyzed to evaluate the applicability of developed photocurable etching resist inks.

A new bite block for panoramic radiographs of anterior edentulous patients: A technical report

  • Park, Jong-Woong;Symkhampha, Khanthaly;Huh, Kyung-Hoe;Yi, Won-Jin;Heo, Min-Suk;Lee, Sam-Sun;Choi, Soon-Chul
    • Imaging Science in Dentistry
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    • v.45 no.2
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    • pp.117-122
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    • 2015
  • Purpose: Panoramic radiographs taken using conventional chin-support devices have often presented problems with positioning accuracy and reproducibility. The aim of this report was to propose a new bite block for panoramic radiographs of anterior edentulous patients that better addresses these two issues. Materials and Methods: A new panoramic radiography bite block similar to the bite block for dentulous patients was developed to enable proper positioning stability for edentulous patients. The new bite block was designed and implemented in light of previous studies. The height of the new bite block was 18 mm and to compensate for the horizontal edentulous space, its horizontal width was 7 mm. The panoramic radiographs using the new bite block were compared with those using the conventional chin-support device. Results: Panoramic radiographs taken with the new bite block showed better stability and bilateral symmetry than those taken with the conventional chin-support device. Patients also showed less movement and more stable positioning during panoramic radiography with the new bite block. Conclusion: Conventional errors in panoramic radiographs of edentulous patients could be caused by unreliability of the chin-support device. The newly proposed bite block for panoramic radiographs of edentulous patients showed better reliability. Further study is required to evaluate the image quality and reproducibility of images with the new bite block.

Suggesting a new testing device for determination of tensile strength of concrete

  • Haeri, Hadi;Sarfarazi, Vahab;Hedayat, Ahmadreza
    • Structural Engineering and Mechanics
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    • v.60 no.6
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    • pp.939-952
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    • 2016
  • A compression to tensile load transforming (CTT) device was developed to determine indirect tensile strength of concrete material. Before CTT test, Particle flow code was used for the determination of the standard dimension of physical samples. Four numerical models with different dimensions were made and were subjected to tensile loading. The geometry of the model with ideal failure pattern was selected for physical sample preparation. A concrete slab with dimensions of $15{\times}19{\times}6cm$ and a hole at its center was prepared and subjected to tensile loading using this special loading device. The ratio of hole diameter to sample width was 0.5. The samples were made from a mixture of water, fine sand and cement with a ratio of 1-0.5-1, respectively. A 30-ton hydraulic jack with a load cell applied compressive loading to CTT with the compressive pressure rate of 0.02 MPa per second. The compressive loading was converted to tensile stress on the sample because of the overall test design. A numerical modeling was also done to analyze the effect of the hole diameter on stress concentrations of the hole side along its horizontal axis to provide a suitable criterion for determining the real tensile strength of concrete. Concurrent with indirect tensile test, the Brazilian test was performed to compare the results from two methods and also to perform numerical calibration. The numerical modeling shows that the models have tensile failure in the sides of the hole along the horizontal axis before any failure under shear loading. Also the stress concentration at the edge of the hole was 1.4 times more than the applied stress registered by the machine. Experimental Results showed that, the indirect tensile strength was clearly lower than the Brazilian test strength.

Orange Phosphorescent Organic Light-emitting Diodes Using a Spirobenzofluorene-type Phospine Oxides as Host Materials

  • Jeon, Young-Min;Lee, In-Ho;Lee, Chil-Won;Lee, Jun-Yeob;Gong, Myoung-Seon
    • Bulletin of the Korean Chemical Society
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    • v.31 no.10
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    • pp.2955-2960
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    • 2010
  • Spiro-type orange phosphorescent host materials, 9-diphenylphosphine oxide-spiro[fluorene-7,9'-benzofluorene] (OPH-1P) and 5-diphenylphosphine oxide-spiro[fluorene-7,9'-benzofluorene] (OPH-2P) were successfully prepared by a lithiation reaction followed by a phosphination reaction with diphenylphosphinic chloride. The EL characteristics of OPH-1P and OPH-2P as orange host materials doped with iridium(III) bis(2-phenylquinoline)acetylacetonate ($Ir(pq)_2acac$) were evaluated. The electroluminescence spectra of the ITO (150 nm)/DNTPD (60 nm)/NPB (30 nm)/OPH-1P or OPH-2P: $Ir(pq)_2acac$ (30 nm)/BCP (5 nm)/$Alq_3$ (20 nm)/LiF (1 nm)/Al (200 nm) devices show a narrow emission band with a full width at half maximum of 75 nm and $\lambda_{max}$ = 596 nm. The device obtained from OPH-1P doped with 3% $Ir(pq)_2acac$ showed an orange color purity of (0.580, 0.385) and an efficiency of (14 cd/A at 7.0 V). The ability of the OPH-P series to combine a high triple energy with a low operating voltage is attributed to the inductive effect of the P=O moieties and subsequent energy lowering of the LUMO, resulting in the enhancement of both the electron injection and transport in the device. The overall result is a device with an EQE > 8% at high brightness, but operating voltage of less than 6.4 V, as compared to the literature voltages of ~10 V.

Optimization Algorithm of Gantry Route Problem for Odd-type Surface Mount Device (이형 부품 표면실장기에 대한 겐트리 경로 문제의 최적 알고리즘)

  • Jeong, Jaewook;Tae, Hyunchul
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.43 no.4
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    • pp.67-75
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    • 2020
  • This paper proposes a methodology for gantry route optimization in order to maximize the productivity of a odd-type surface mount device (SMD). A odd-type SMD is a machine that uses a gantry to mount electronic components on the placement point of a printed circuit board (PCB). The gantry needs a nozzle to move its electronic components. There is a suitability between the nozzle and the electronic component, and the mounting speed varies depending on the suitability. When it is difficult for the nozzle to adsorb electronic components, nozzle exchange is performed, and nozzle exchange takes a certain amount of time. The gantry route optimization problem is divided into the mounting order on PCB and the allocation of nozzles and electronic components to the gantry. Nozzle and electronic component allocation minimized the time incurred by nozzle exchange and nozzle-to-electronic component compatibility by using an mixed integer programming method. Sequence of mounting points on PCB minimizes travel time by using the branch-and-price method. Experimental data was made by randomly picking the location of the mounting point on a PCB of 800mm in width and 800mm in length. The number of mounting points is divided into 25, 50, 75, and 100, and experiments are conducted according to the number of types of electronic components, number of nozzle types, and suitability between nozzles and electronic components, respectively. Because the experimental data are random, the calculation time is not constant, but it is confirmed that the gantry route is found within a reasonable time.

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

  • Kim, Sung Yoon;Seo, Jae Hwa;Yoon, Young Jun;Yoo, Gwan Min;Kim, Young Jae;Eun, Hye Rim;Kang, Hye Su;Kim, Jungjoon;Cho, Seongjae;Lee, Jung-Hee;Kang, In Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.508-517
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    • 2014
  • We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design

  • Park, Jun-Chul;Yoo, Chan-Sei;Kim, Dongsu;Lee, Woo-Sung;Yook, Jong-Gwan
    • Journal of electromagnetic engineering and science
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    • v.14 no.3
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    • pp.284-292
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    • 2014
  • This paper presents a characteristic evaluation of commercial gallium nitride (GaN) transistors having two different gate-lengths of $0.4-{\mu}m$ and $0.25-{\mu}m$ in the design of a class-S power amplifier (PA). Class-S PA is operated by a random pulse-width input signal from band-pass delta-sigma modulation and has to deal with harmonics that consider quantization noise. Although a transistor having a short gate-length has an advantage of efficient operation at higher frequency for harmonics of the pulse signal, several problems can arise, such as the cost and export license of a $0.25-{\mu}m$ transistor. The possibility of using a $0.4-{\mu}m$ transistor on a class-S PA at 955 MHz is evaluated by comparing the frequency characteristics of GaN transistors having two different gate-lengths and extracting the intrinsic parameters as a shape of the simplified switch-based model. In addition, the effectiveness of the switch model is evaluated by currentmode class-D (CMCD) simulation. Finally, device characteristics are compared in terms of current-mode class-S PA. The analyses of the CMCD PA reveal that although the efficiency of $0.4-{\mu}m$ transistor decreases more as the operating frequency increases from 955 MHz to 3,500 MHz due to the efficiency limitation at the higher frequency region, it shows similar power and efficiency of 41.6 dBm and 49%, respectively, at 955 MHz when compared to the $0.25-{\mu}m$ transistor.

Variation in the Magneto-Impedance (MI) Effect According to the Shape of Patterned Co30Fe34Ni36 Alloys

  • Kim, Hyun-Kyung;Kim, Do-Hun;Son, De-Rac;Jeung, Won-Young
    • Journal of Magnetics
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    • v.13 no.2
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    • pp.65-69
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    • 2008
  • The magneto impedance (MI) behaviors of patterned $Co_{30}Fe_{34}Ni_{36}$ microwire were investigated with respect to its shape variation. After preparing $Co_{30}Fe_{34}Ni_{36}$ microwires using electrodeposition and photolithography methods, impedance measurements were conducted to compare the MI ratios of the devices with different aspect ratios. As a result, the anisotropy field and transverse permeability were found to be strongly affected by the aspect ratio of the device. The external field value at the maximum impedance and maximum sensitivity of the device was found to increase with increasing device width, which was attributed to the increased transverse anisotropy with decreasing aspect ratio. While an increase in the thickness also contributed to an increase in the MI ratio, a variation in the thickness not only increased the anisotropic field, but the variation in the MI ratio was as also affected by the skin effect. Conversely, the MI ratios of the present devices were hardly affected by variations in the length. Considering the typical aspect ratios of our devices, it was expected that the length effect would emerge when the aspect ratio was reduced to less than 10. Nevertheless, our results show that for the practical application of MI devices, the MI characteristics can be optimized by tailoring the aspect ratio of the devices.

Fabrication and Performance of Electron Cyclotron Resonance Ion Milling System for Etching of Magnetic Film Device (자성박막 소자 에칭용 전자 사이클로트론 공명 이온밀링 시스템 제작과 특성연구)

  • Lee, Won-Hyung;Hwang, Do-Guwn;Lee, Sang-Suk;Rhee, Jang-Roh
    • Journal of the Korean Magnetics Society
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    • v.25 no.5
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    • pp.149-155
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    • 2015
  • The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.