• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.332-338
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• 1999

Surface hardening of plain carbon steel (SM$%C) by Laser are usually much finer and stronger than those of the base metals. The present study was undertaken to investigate the wear resistance and a processing parameters such as, power density, pulse width, defocusing distance, and molten depth for surface modification of plain carbon steel. The wear test was carried out under experimental condition using the wear test device, and in which the annular surfaces of wear test specimens as well as mating specimen of alumina ceramics(Al2O3) was rubbed in dry sliding condition. It is shown that molten depth and width depend on defocusing distance. The wear loss on variation of sliding speed was much in lower speed range below 0.2m/sec and in higher speed range above 0.7m/sec, but wear loss was little in intermediate speed range. It depends on oxidation speed and wear speed.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.63-70
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• 1999

Surface hardening of plain carbon steel (SM45C) by Laser are usually much finer and stronger than those of the base metals. The present study was under taken to investigate the wear resistance and a processing parameters such as, power density, pulse width, defocusing distance, and molten depth for surface modification of plain carbon steel. The wear test was carried out under experimental condition using the wear test device, and in which the annular surfaces of wear test specimens as well as mating specimen of alumina ceramics($Al_2O_3$) was rubbed in dry sliding condition. It is shown that molten depth and width depend on defocusing distance. The wear loss on variation of sliding speed was much in lower speed range below 0.2m/sec and in higher speed range above 0.7m/sec, but wear loss was little in intermediate speed range. It depends on oxidation speed and wear speed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.63-64
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and $25\;{\mu}m$) and channel lengths (70, 30, and $5\;{\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.203-211
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• 2002

ABS (Anti-lock Braking System) is a safety device for preventing wheel locking in a sudden braking. It consists of hydraulic modulator, ECU(Electronic Control Unit) and angular velocity sensors. Its control methods are classified into three types; deceleration control, slip ratio control and deceleration/acceleration control. In this paper, ABS mounted vehicle is mathematically modeled and the proposed model is verified by actual cars experiments, and the braking characteristics of the control methods with pulse width modulation are compared and analyzed through computer simulations.

• KIEAE Journal
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• v.2 no.3
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• pp.33-38
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• 2002

The intermediate range of temperatures($100{\sim}300^{\circ}C$) which can be achieved with CPCs(Compound Parabolic Concentrators) without tracking device provides both economic and thermal advantages for solar collector design. The present paper summarizes critical design considerations for CPC with cylindrical absorber and its optical performance using ray tracing program. Concentration ratios vary as acceptance half angle, ratio of reflector height to aperture width and ratio of reflector area to aperture area. This effects showed that the concentration ratio was increased as acceptance angle but optimum ratio of reflector height to aperture width existed at critical value. As a result of ray tracing, solar ray losses was maximized at acceptance half angle and this problem was solved by increasing absorber tube diameter. The concentrating flux distribution on the absorber surface was uniform but peak flux existed.

• Proceedings of the KIPE Conference
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• 2001.12a
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• pp.171-174
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• 2001

This paper proposes a nonlinear impedance circuit composed by diodes and inductors or capacitors. This circuit needs no control circuits and switches, and the impedance .value is changed by the polarity of current or voltage. and this paper presents one of these applications to improve the input current of capacitor input diode rectifiers. The rectifier using the nonlinear impedance circuit id constructed with four diodes and four capacitors in addition to the conventional rectifiers, that is, it has eight diodes and five capacitors, including a DC link capacitor. It makes harmonic components of the input current reduce and the power factor improve. A circuit design method is shown by experimentation and confirmed simulation. It explained that compared conventional pulse width modulated (PWM) inverter with half pulse-width modulated (HPWM) inverter. Proposed HPWM inverter eliminated dead-time by lowering switching loss and holding over-shooting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.354-355
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• 2008

The sensitivity and sensing margin of SOI(silicon on insulator) nano-wire BioFET(field effect transistor) were investigated by using back-gate bias. The channel conductance modulation was affected by doping concentration, channel length and channel width. In order to obtain high sensitivity and large sensing margin, low doping concentration, long channel and narrow width are required. We confirmed that the electrical sensing by back-gate bias is effective method for evaluation and optimization of bio-sensor.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.366-370
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• 1997

This paper descibes a micro groove machining process on the polyurethane biopolymer by KrF excimer laser. To investigate the etch charcteristics of polyurethane biopolymer quantitatively,laser system for ablation was installed with high precison moter and then polymer ablation experiment, in which paramteters were fluence,pulse repetition rate,numbers of pulses and assist gas, was carred out. In this experiment, we found out that the value of critical energy density for ablation is 30mJ/cmsup2/ and the etching rate is more dependent on the pulse number and fluence than any other pamameter. Finally, we machined micro grooves for fiexibility as width 300.mu.m depth 100.mu.m and port for micro-devices mounting as length 100.mu.m width 300.mu.m depth .mu.m on the outer wallof polyurethane biopolymer tube which is used as medical device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.747-750
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ${\mu}m$) and channel lengths (70, 30, and 5 ${\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.505-508
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• 2006

Self-heating induced device degradation and its width/length (W/L) dimension dependence were studied in p-type polycrystalline silicon (poly-Si) thin film transistors (TFTs). Negative channel conductance was observed under high power region of output curve, which was mainly caused by hole trapping into gate oxide and also by trap state generation by self-heating effect. Self-heating effect became aggravated as W/L ratio was increased, which was understood by the differences in heat dissipation capability. By reducing applied power density normalized to TFT area, self-heating induced degradation could be reduced.