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http://dx.doi.org/10.4313/JKEM.2009.22.9.747

Study on Contact Resistance on the Performance of Oxide Thin Film Transistors  

Lee, Jae-Sang (한국과학기술연구원 에너지재료연구단)
Koo, Sang-Mo (광운대학교 전자재료공학과)
Lee, Sang-Yeol (한국과학기술연구원 에너지재료연구단)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.9, 2009 , pp. 747-750 More about this Journal
Abstract
The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ${\mu}m$) and channel lengths (70, 30, and 5 ${\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.
Keywords
$ZrO_2$; a-IGZO; Thin film transistor;
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