• Journal of IKEEE
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• v.24 no.3
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• pp.890-894
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• 2020

In this paper, we propose an ESD protection device with improved electrical characteristics through structural changes of LVTSCR, a typical ESD protection device. The proposed ESD protection device has a higher holding voltage than the existing LVTSCR by inserting a long N+ drift region and additional P-Well and N-Well, and improves the latch-up immunity, a chronic disadvantage of a general SCR-based ESD protection device. In addition, the effective base width of parasitic BJTs was set as a design variable, and the electrical characteristics of the proposed ESD protection device were verified through Synopsys' TCAD simulation so that it can be applied to the required application by applying the N-Stack technology.

• Korean Journal of Optics and Photonics
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• v.10 no.4
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• pp.342-347
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• 1999

As the waveguide width and the radius of curvature get smaller for the effort of monolithic fabrication of integrated photonic devices, the waveguide characteristics change significantly according to the change of the waveguide width or the radius of curvature. Especially, variation of the waveguide width due to fabrication process errors induces a phase error for each waveguide from the change of the propagation constant. Therefore, it is important to quantify these variation effects on the device characteristics for the design and fabrication of highly integrated photonic devices. Here, we analyze four different types of waveguides to get general characteristics in propagation constant change by utilizing the effective index method and the analytic solution method. Futhermore, the output characteristics of two AWG(Arrayed Waveguide Grating) devices are simulated by a highly-functional computer code. The simulated results have been found to be similar to the realistic device characteristics. The required fabrication error limit for the ridge-type InP-AWG device should be smaller than 0.02 ${\mu}{\textrm}{m}$ to get better channel crosstalk than-25 dB, while the required fabrication error limit for rib-type silica-AWG devices may be allowed up to 0.1 ${\mu}{\textrm}{m}$ to obtain better crosstalk than -30 dB.

• Journal of Periodontal and Implant Science
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• v.31 no.3
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• pp.531-542
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• 2001

Periodontal debridement is most important procedure in periodontal treatment, because periodontal disease is the biofilm infection. The use of ultrasonic instrument has many clinical advantages compared to classical hand instrument. The introduction of newly developed ultrasonic scaler tips made the use of ultrasonic scaler popular. However the study of tooth substance removal according to the working parameters of ultrasonic scaler with newly developed tips is not sufficient. The purpose of this study is to evaluate the effects of working parameters of piezoelectric ultrasonic scaler with curette tip on casting gold removal. The working parameters was standardized by the sledge device which controls lateral force(0.5 N, 1.0 N, 2.0 N) and power setting was adjusted 2, 4, 8 in P mode and S mode and instrumentation time was 5 seconds. The defect depth and width were measured with profile meter and defect surface was examined by SME. The depth of defect was significantly large in S mode( $39.58{\pm}19.35{\mu}m$) compared to P mode( $8.37{\pm}6.98{\mu}m$). There was significant decrease of depth of defect between 1.0N($32.87{\pm}27.18{\mu}m$) and 2.0N( $14.86{\pm}15.04{\mu}m$). The area of defect was also significantly large in S mode($4482.42{\pm}3551.71{\mu}m^2$) compared to P mode( $922.06{\pm}960.32{\mu}m^2$). There was significant decrease of area of defect between 1.0N($3889.12{\pm}3936.00{\mu}m$) and 2.0N( $974.66{\pm}986.01{\mu}m$). The change of mode did not effect on the width of the defect. The change of power setting did not effect on the depth, width, and area of defect. In spite of limitation of this study it could be concluded that the use of piezoelectric ultrasonic scaler with curette tip on S mode could make significant tooth substance loss.

• Earthquakes and Structures
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• v.18 no.2
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• pp.215-222
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• 2020

In this paper, slit steel rubber bearing is presented as an innovative seismic isolator device. In this type of isolator, slit steel damper is an energy dissipation device. Its advantages in comparison with that of the lead rubber bearing are its simplicity in manufacturing process and replacement of its yielding parts. Also, slit steel rubber bearing has the same ability to dissipate energy with smaller value of displacement. Using finite element method in ABAQUS software, a parametric study is done on the performance of this bearing. Three different kinds of isolator with three different values of strut width, 9, 12 and 15 mm, three values of thickness, 4, 6 and 8 mm and two steel types with different yield stress are assessed. Effects of these parameters on the performance characteristics of slit steel rubber bearing are studied. It is shown that by decreasing the thickness and strut width and by selecting the material with lower yield stress, values of effective stiffness, energy dissipation capacity and lateral force in the isolator reduce but equivalent viscous damping is not affected significantly. Thus, by choosing appropriate values for thickness, strut width and slit steel damper yield stress, an isolator with the desired behavior can be achieved. Finally, the performance of an 8-storey frame with the proposed isolator is compared with the same frame equipped with LRB. Results show that SSRB is successful in base shear reduction of structure in a different way from LRB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.41-44
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• 2010

The Cu thickness dependence of magnetic sensitivity for the NiFe/Cu/NiFe/IrMn spin valve multilayer was investigated. The magnetic properties measured by minor MR curves for the Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) multilayer is MR = 1.46 %, MS = 2.0 %/Oe, $H_c\;=\;2.6\;Oe$, and $H_{int}\;=\;0.1\;Oe$. The magnetic sensitivities of GMR-SV devices with ten different widths and a same length of $4.45\;{\mu}m$ by fabricated by photo lithography decreased from 0.3 %/Oe to 0.06%/Oe as from a width of $10\;{\mu}m$ to $1\;{\mu}m$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.57-63
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• 2000

A multi-branch thermo-optic switch has a problem that driving powers in the switching states are different from each other; the power consumption for the inner output port is more than twice as large as that form the outer output port. In this pater, to solve this problem unequal width heaters and the waveguide structure with a thin overcladding layer are proposed in a four-branch thermo-optic switch. The proposed structure is fabricated with the polymer materials with high index difference, Teflon and polyimides. The fabricated device was measured at the wavelength of 1550 nm. The measured characteristics exhibit the smaller difference in the power consumption between the switching states and the driving power les than the previous four-branch thermo-optic switch with equal width heaters. As for the device performance, the crosstalk is better than - 16 dB at about 310 ~ 390 mW, the insertion loss is 4.7 dB, and the switching time is less than 1 ms.

• Korean Journal of Optics and Photonics
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• v.12 no.4
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• pp.312-319
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• 2001

We proposed a B-RWG LD (Buried-ridge waveguide laser diode) having more merits than a conventional RWG-LD. It's ridge width is controlled easily, it has the advantage of being more planar than the RWG-LD and it is possible to control refractive index with growth layer thickness. Before fabricating the device, we designed the optimal device for single mode, high efficiency and high power operation. From theoretical analysis, we have to control the $d_2, d_3$ layer thicknesses for lateral effective index difference, $\Delta_{nL}$ to be higher than critical value, and simultaneously consider the ridge width for single mode and low threshold current operation. As a result, it is possible to make a single mode LD having the ridge width of $6~9{\mu}m$ if the lateral effective index difference was controlled properly. perly.

• Journal of the Korean Society of Safety
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• v.23 no.2
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• pp.1-6
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• 2008

The present study investigates on improvement of inhalation efficiency of hood in ventilation system for elimination of industrial dust. The hood, one of local exhaust ventilation system, has an important function to inhale a pollution source such as harmful dust and industrial waste. In this study, in order to improve the inhalation efficiency of the industrial hood, a new device named "gas-guide-device" was attached to inside of hood. The thermal fluid commercial code "Phoenics ver 3.1" was used to analyze the flow velocity distribution at the hood inlet and around the hood after gas-guide-device was installed. And the flow velocity on each position inside and around the hood was actually measured using the hot wire type anemometer under the same condition as that of numerical analysis. Also, in order to identify the optimum shape of gas-guide-device, numerical analysis and experiments are performed under various conditions and their results are presented. The results of this study revealed that the hood attached with gas-guide-device was higher the inhalation efficiency than that for without one and can be possible to improve the capture velocity of the industrial dust. And the optimum shape of gas-guide-device was identified that the ratio of two sizes of gas-guide-device, X to Y, has 4 to 6 on the basis of the hood size in use and the width (b) of gas-guide-device.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.5
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• pp.35-41
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• 2008

This paper presents the design method of current-mode signal processing for high speed and low power digital audio signal processing. The digital audio processor requires a digital signal processing such as fast Fourier transform (FFT), which has a problem of large power consumption according to the settled point number and high speed operation. Therefore, a current-mode signal processing with a switched Current (SI) circuit was employed to the digital audio signal processing because a limited battery life should be considered for a low power operation. However, current memory that construct a SI circuit has a problem called clock-feedthrough. In this paper, we examine the connection of dummy MOS that is the common solution of clock-feedthrough and are willing to calculate the relation of width between dummy MOS for a proposal of the design methodology for improvement of current memory. As a result of simulation, in case of that the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the relation of width between switch MOS and dummy MOS is $W_{M4}=1.95W_{M3}+1.2$ for the width of switch MOS is 2~5um, it is $W_{M4}=0.92W_{M3}+6.3$ for the width of switch MOS is 5~10um. Then the defined relation of MOS transistors can be a useful design guidance for a high speed low power digital audio processor.