• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.183-184
• /
• 2005

In this paper. a new small size Lateral Trench Electrode Power IGBT is proposed. The entire electrode of proposed LIGBT is placed in trench oxide. The forward blocking voltage of the proposed LIGBT is improved by 1.6 times with that of the conventional LIGBT. The forward blocking voltage of proposed LIGBT is 500V. At the same size. a increase of the forward blocking voltage of about 1.6 times relative to the conventional LIGBT is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide. the electric field in the device are crowded to trench oxide. We observed that the characteristics of i the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1034-1037
• /
• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of 0.3Cd/$m^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.338-341
• /
• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19$\mu\textrm{m}$. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V,

• Journal of the Optical Society of Korea
• /
• v.16 no.3
• /
• pp.221-227
• /
• 2012

We propose optical proximity corrections (OPCs) for digital micromirror device (DMD)-based maskless lithography. A pattern writing scheme is analyzed and a theoretical model for obtaining the dose distribution profile and resulting structure is derived. By using simulation based on this model we were able to reduce the edge placement error (EPE) between the design width and the critical dimension (CD) of a fabricated photoresist, which enables improvement of the CD. Moreover, by experiments carried out with the parameter derived from the writing scheme, we minimized the corner-rounding effect by controlling light transmission to the corners of a feature by modulating a DMD.

• Korean Journal of Materials Research
• /
• v.30 no.8
• /
• pp.421-425
• /
• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

• Proceedings of the KIEE Conference
• /
• 1999.11c
• /
• pp.706-708
• /
• 1999

In recent years, analog to digital converter is significant component in high frame rate system. But, in the future. as long as minimum line width is reduced, matching between speed and resolution may be worse. In this paper, first-order $\Sigma-\Delta$ analog to digital converter is adopted and designed as its solutions. Hspice simulation is performed, using $0.65{\mu}m$ CMOS 2-poly 2-metal model parameter.

• Journal of Institute of Control, Robotics and Systems
• /
• v.11 no.5
• /
• pp.445-450
• /
• 2005

In this paper, we suggest an integrated tactile display system that provides kinesthetic force, pressure distribution, vibration and slip/stretch. The system consists of two parts: a 2 DOF force feedback device for kinesthetic display and a tactile feedback device for displaying the normal stimulation to the skin and the skin slip/stretch. Psychophysical experiments measure the effects of fingerpad selection, the direction of finger movements and the texture width on tactile sensitivity. We also investigate the characteristics of lateral finger movement while subjects perceive different textures. From the experimental results, the principal parameters for designing a tactile display are suggested. A tactile display device, using eight piezoelectric bimorphs and a linear actuator, Is implemented and attached to a 2 DOF translational force feedback device to simultaneously simulate the texture and stiffness of the object. As a result, we find out that the capability of the suggested device is sufficient to display physical quantities to display the texture.

• The Journal of the Korea Contents Association
• /
• v.10 no.4
• /
• pp.257-264
• /
• 2010

Though existent a transcranial magnetic stimulation makes various treatment and diagnostic sine waveform of fixed stimulation pulse, there is limitation. In this research, because strength, pulse width, pulse pattern required in treatment and diagnostic introduce other Cockroft-Walton circuit and half bridge inverter frequency and voltage variable become new device propose wish to. Have more advantages than existing device. First, do not have high voltage transformer. Second, switching loss can be less, and control output energy precisely. Three, stimulation strengths, pulse width, pulse pattern are various. As a result, sought special quality and an experiment that is improved applying inverter and cockroft - Walton circuit is half bridge inverter that do not use transformer.

• IEMEK Journal of Embedded Systems and Applications
• /
• v.12 no.2
• /
• pp.89-96
• /
• 2017

We develop an embedded system to measure various sensor data, control multiple motors, and communicate with mobile devices for system managements. Choosing TI AM3359 microprocessor featuring high processing performance, low power consumption, and various I/O device support, we design and build the embedded system hardware so that it supports multiple global positioning system (GPS) and gyro sensor modules to measure precise position; multiple pulse width modulation (PWM) outputs to control multiple direct current (DC) motors; a Bluetooth module to communicate with mobile devices. Then, we port the boot loader and device drivers to the built circuit board and construct the firmware development environment for the application programming. The performance of the designed and implemented embedded system is demonstrated by real motor control test using GPS and gyro sensor data and control parameters configured by a mobile device.

• Fire Science and Engineering
• /
• v.10 no.2
• /
• pp.28-39
• /
• 1996

A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.