• 한국결정성장학회지
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• 제34권1호
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• pp.1-7
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• 2024

β-Ga₂O₃는 ~4.8 eV의 넓은 밴드 갭과 8 MV/cm의 높은 항복 전압을 가지는 물질로 전력소자의 응용 분야에서 많은 주목을 받고 있다. 또한, 대표적인 WBG 반도체 소재인 SiC, GaN, 다이아몬드 등과 비교했을 때, 높은 성장률과 낮은 제조 비용으로 단결정 성장이 가능하다는 장점을 가진다[1-4]. 본 연구에서는 다중 슬릿 구조를 이용한 EFG(Edge-defined Film-fed Growth) 법을 통해 SnO₂ 0.3 mol% 도핑된 10 mm 두께의 β-Ga₂O₃ 단결정을 성장시키는 데에 성공했다. 성장 방향과 성장 면은 각각 [010]/(001)로 설정하였으며 성장 속도는 약 12 mm/h이다. 성장시킨 β-Ga₂O₃ 단결정은 다양한 결정면(010, 001, 100, ${\bar{2}}01$)으로 절단하여 표면 가공을 진행하였다. 가공이 완료된 샘플은 XRD, UV/VIS/NIR Spec., Mercury Probe, AFM, Etching 등의 분석을 통해 결정면에 따른 특성을 비교하였다. 본 연구는 고전압 및 고온 응용 분야에서 전력반도체 기술의 발전에 기여할 것으로 기대되며 더 나은 특성의 기판을 선택하는 것은 소자의 성능과 신뢰성을 향상시키는데에 중요한 역할을 할 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• 전기전자학회논문지
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• 제22권1호
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• pp.180-184
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• 2018

산화갈륨 ($Ga_2O_3$)과 탄화규소 (SiC)는 넓은 밴드 갭 ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV)과 높은 임계전압을 갖는 물질로서 높은 항복 전압을 허용한다. 수직 DMOSFET 수평구조에 비해 높은 항복전압 특성을 갖기 때문에 고전압 전력소자에 많이 적용되는 구조이다. 본 연구에서는 2차원 소자 시뮬레이션 (2D-Simulation)을 사용하여 $Ga_2O_3$와 4H-SiC 수직 DMOSFET의 구조를 설계하였으며, 항복전압과 저항이 갖는 trade-off에 관한 파라미터를 분석하여 최적화 설계하였다. 그 결과, 제안된 4H-SiC와 $Ga_2O_3$ 수직 DMOSFET구조는 각각 ~1380 V 및 ~1420 V의 항복 전압을 가지며, 낮은 게이트 전압에서의 $Ga_2O_3-DMOSFET$이 보다 낮은 온-저항을 갖고 있지만, 게이트 전압이 높으면 4H-SiC-DMOSFET가 보다 낮은 온-저항을 갖을 수 있음을 확인하였다. 따라서 적절한 구조와 gate 전압 rating에 따라 소자 구조 및 gate dielectric등에 대한 심화 연구가 요구될 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Current Photovoltaic Research
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• 제4권3호
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• pp.108-113
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• 2016

III-V compound semiconductor based thin film solar cells promise relatively higher power conversion efficiencies and better device reliability. In general, the thin film III-V solar cells are fabricated by an epitaxial lift-off process, which requires an $Al_xGa_{1-x}As$ ($x{\geq}0.8$) sacrificial layer and an inverted solar cell structure. However, the device performance of the inversely grown solar cell could be degraded due to the different internal diffusion conditions. In this study, InGaP/GaAs double-junction solar cells are inversely grown by MOCVD on GaAs (100) substrates. The thickness of the GaAs base layer is reduced to minimize the thermal budget during the growth. A wide band gap p-AlGaAs/n-InGaP tunnel junction structure is employed to connect the two subcells with minimal electrical loss. The solar cell structures are transferred on to thin metal films formed by Au electroplating. An AlAs layer with a thickness of 20 nm is used as a sacrificial layer, which is removed by a HF:Acetone (1:1) solution during the epitaxial lift-off process. As a result, the flexible InGaP/GaAs solar cell was fabricated successfully with an efficiency of 27.79% under AM1.5G illumination. The efficiency was kept at almost the same value after bending tests of 1,000 cycles with a radius of curvature of 10 mm.

• 한국전기전자재료학회논문지
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• 제25권10호
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.