• Title/Summary/Keyword: wet oxidation

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Etch Rate of Oxide Grown on Silicon Implanted with Different Ion Implantation Conditions prior to Oxidation

  • Joung, Yang-Hee;Kang, Seong-Jun
    • Journal of information and communication convergence engineering
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    • v.1 no.2
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    • pp.67-69
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    • 2003
  • The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

Wet Air Oxidation Pretreatment of Mixed Lignocellulosic Biomass to Enhance Enzymatic Convertibility

  • Sharma, A.;Ghosh, A.;Pandey, R.A.;Mudliar, S.N.
    • Korean Chemical Engineering Research
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    • v.53 no.2
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    • pp.216-223
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    • 2015
  • The present work explores the potential of wet air oxidation (WAO) for pretreatment of mixed lignocellulosic biomass to enhance enzymatic convertibility. Rice husk and wheat straw mixture (1:1 mass ratio) was used as a model mixed lignocellulosic biomass. Post-WAO treatment, cellulose recovery in the solid fraction was in the range of 86% to 99%, accompanied by a significant increase in enzymatic hydrolysis of cellulose present in the solid fraction. The highest enzymatic conversion efficiency, 63% (by weight), was achieved for the mixed biomass pretreated at $195^{\circ}C$, 5 bar, 10 minutes compared to only 19% in the untreated biomass. The pretreatment under the aforesaid condition also facilitated 52% lignin removal and 67% hemicellulose solubilization. A statistical design of experiments on WAO process conditions was conducted to understand the effect of process parameters on pretreatment, and the predicted responses were found to be in close agreement with the experimental data. Enzymatic hydrolysis experiments with WAO liquid fraction as diluent showed favorable results with sugar enhancement up to $10.4gL^{-1}$.

Characterizations of Thermal Compound Using CuO Particles Grown by Wet Oxidation Method (습식 산화법으로 성장된 산화구리입자를 이용한 방열 컴파운드 제조 및 특성 연구)

  • Lee, Dong Woo;Um, Chang Hyun;Chu, Jae Uk
    • Korean Journal of Materials Research
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    • v.27 no.4
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    • pp.221-228
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    • 2017
  • Various morphologies of copper oxide (CuO) have been considered to be of both fundamental and practical importance in the field of electronic materials. In this study, using Cu ($0.1{\mu}m$ and $7{\mu}m$) particles, flake-type CuO particles were grown via a wet oxidation method for 5min and 60min at $75^{\circ}C$. Using the prepared CuO, AlN, and silicone base as reagents, thermal interface material (TIM) compounds were synthesized using a high speed paste mixer. The properties of the thermal compounds prepared using the CuO particles were observed by thermal conductivity and breakdown voltage measurement. Most importantly, the volume of thermal compounds created using CuO particles grown from $0.1{\mu}m$ Cu particles increased by 192.5 % and 125 % depending on the growth time. The composition of CuO was confirmed by X-ray diffraction (XRD) analysis; cross sections of the grown CuO particles were observed using focused ion beam (FIB), field emission scanning electron microscopy (FE-SEM), and energy dispersive analysis by X-ray (EDAX). In addition, the thermal compound dispersion of the Cu and Al elements were observed by X-ray elemental mapping.

An Analysis of IGBT(Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using Wet Oxidation (습식 산화를 이용한 원형 트렌치 게이트 IGBT에 관한 연구)

  • Kwak, Sang-Hyeon;Kyoung, Sin-Su;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.11
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    • pp.981-986
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    • 2008
  • The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

A Study on the Hump Characteristics of the MOSFETs (MOSFET의 험프 특성에 관한 연구)

  • Kim, Hyeon-Ho;Lee, Yong-Hui;Yi, Jae-Young;Yi, Cheon-Hee
    • Proceedings of the Korea Information Processing Society Conference
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    • 2002.04a
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    • pp.631-634
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    • 2002
  • In this paper we improved that hump occurrence by increased oxidation thickness, and control field oxide recess$(\leq20nm)$, wet oxidation etch time(19HF, 30sec), STI nitride wet cleaning time(99 HF, 60sec + P 90min) and gate pre-oxidation cleaning time(U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

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The MOSFET Hump Characteristics Occurring at STI Channel Edge (STI 채널 모서리에서 발생하는 MOSFET의 험프 특성)

  • 김현호;이천희
    • Journal of the Korea Society for Simulation
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    • v.11 no.1
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    • pp.23-30
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    • 2002
  • An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

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Study On the Characteristics of Milled $UO_2$ Powder Prepared by Oxidation and Reduction Process (산화ㆍ환원처리된 $UO_2$ 분말의 분쇄특성 연구)

  • Lee Jae-Won;Lee Jung-Won
    • Resources Recycling
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    • v.11 no.4
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    • pp.3-10
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    • 2002
  • The characteristics of dry and wet milled powder prepared by 1 cycle OREOX (oxidation and reduction of oxide fuels) treatment were investigated using the simulated spent fuel pellet. Sintered pellets simulating spent nuclear fuel burned in reactor were fabricated from $UO_2$ powder using as a starting material in fabrication of nuclear fuel. The 1 cycle OREOX-treated powder was prepared by only one path of oxidation md reduction of the simulated pellet. Powder having average particle size of less than 1 $\mu\textrm{m}$ could be easily obtained by dry milling, but not be achieved by wet milling. And, specific surface area of dry milled pow-der was higher than that of wet milled powder. Dry milled powder formed loose agglomerate, while wet milled powder showed the shape of irregular and angular particles. Dry milled powder provided higher green density, resulting in higher sintered density of higher than 95% TD and average grain size of larger than 8 $\mu\textrm{m}$ satisfying the standard specification of sintered pellets.

Catalytic Wet Oxidation of Azo Dye Reactive Black 5 (아조염료 Reactive Black 5 폐수의 촉매습식산화)

  • Suh, Il-Soon;Yoo, Shin-Suk;Ko, Mi-So;Jeong, Samuel;Jung, Cheol-Goo;Hong, Jeong-Ah;Yoon, Wang-Lai
    • Korean Chemical Engineering Research
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    • v.48 no.2
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    • pp.259-267
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    • 2010
  • The catalytic wet oxidations of the wastewater containing azo dye Reactive Black 5(RB5) with heterogeneous catalyst of CuO have been carried out to investigate the effects of temperature($190{\sim}230^{\circ}C$) and catalyst concentration(0.00~0.20 g/l) on the removals of colour and total organic carbon TOC. The wastewater colour was measured with spectrophotometer, and the oxidation rate was estimated with TOC. About 90% of colour was removed during 120 min in thermal degradation of the RB5 wastewater at $230^{\circ}C$, while TOC was not removed at all. As increasing reaction temperature and catalyst concentration, the removal rates of colour and TOC increased in the catalytic wet oxidations of RB5 wastewater. The effects of catalyst were already considerable even at 0.01 g CuO/l, while the removal rates of colour and TOC increased negligibly with increasing the catalyst concentration above 0.05 g CuO/l. The initial destruction rates of the wastewater colour have shown the first-order kinetics with respect to the wastewater colour. TOC changes during catalytic wet oxidations have been well described with the global model, in which the easily degradable TOC was distinguished from non-degradable TOC of the wastewater. The impacts of reaction temperature on the destruction rate of the wastewater colour and TOC could be described with Arrhenius relationship. Activation energies of the colour removal reaction in thermal degradation, wet oxidation, and catalytic wet oxidation(0.20 g CuO/l) of the RB5 wastewater were 108.4, 78.3 and 74.1 kJ/mol, respectively. The selectivity of wastewater TOC into the non-degradable intermediates relative to the end products in the catalytic wet oxidations of RB5 wastewater was higher compared to that in phenol wet oxidations.