• 한국기계가공학회지
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• 제14권5호
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• pp.15-21
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• 2015

The glass used for Mobile Camera Window is required to have high strength. Cell type manufacturing by means of CNC is widely used for camera window. Individual loading and unloading is needed for each process, such as painting and PVD, in cell type manufacturing. The purpose of this study is to search the enhanced manufacturing process with sheet type throughout bulk unit production in painting and PVD. This study includes sheet type manufacturing processes such as laser cutting, wet etching, 2nd tempering, printing, and AF/AR coating.

• 한국광학회지
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• 제6권2호
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• pp.148-155
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• 1995

저손실의 단일모드 $Al_{0.042}Ga_{0.958}As/GaAs/Al_{0.042}Ga_{0.958}As$ strip-loaded 도파로들이 유효굴절률 방법으로 설계되고 MOCVD 성장기법과 화학적인 습식 식각방법으로 제작되었다. 제작된 도파로의 전파손실과 도파로 단면의 반사율은 $1.31{\mu}m$ 파장에서 Fabry-Perot 공명방법과 연속적인 절단 실험을 이용하여 측정되었다. 실험결과 폭이 $ w=4.1{\mu}m$인 직선 도파로에 대해 전파손실은 0.62dB/cm로 작았으며 도파로의 반사율은 0.299가 되었다.

• 전자공학회논문지A
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• 제29A권4호
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• pp.38-48
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• 1992

OEIC(Optoelectronic Integrated Circuit)'s can be integrated horizontally or vertically. Horizontal integration approach is, however, more immune to parasitic and more universally applicable. In this paper, a structural modeling, fabrication and characterization of PIN photodiodes which can be used in the horizontal integration are performed. For device modeling, we build a transmission line model from 2-D device simulation, from which lumped model parameters are extracted. The speed limits of the PIN photodiodes can also be calculated under various structural conditions from the model. Thus optimum design of horizontally integrated PIN photodiodes for high speed operation are possible. Such InGaAs/InP PIN photodiodes for long-wavelength communications are fabricated using pit etch, epi growth, planarization, diffusion and metallization processes. Planarization process using both RIE and wet etching and diffusion process using evaporated Zn$_{3}P_{2}$ film are developed. Characterization of the fabricated devices is performed through C-V and I-V measurements. At a reserve bias of 10V, the dark current is less than 5nA and capacitance is about 0.4pF. The calculated bandwidth using the measured series resistance and capacitance is about 4.23GHz.

• 전자공학회논문지A
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• 제31A권9호
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.58-61
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• 2012

In our report a relatively simple process for fast nano-texturing of p-type(100) CZ- silicon surface using silver catalyzed wet chemical etching in aqueous hydrofluoric acid (HF) and hydrogen peroxide solution($H_2O_2$) at room temperature. The wafers were saw-damaged by NaOH(6 wt%) at $60^{\circ}C$ for 150s. To obtain a nano-structured black surface, a thin layer of silver with thickness of 1 - 10 nm was deposited on the surfaces by evaporation system. After this process the samples were etched in HF : $H_2O_2$ : $H_2O$ = 1:5:10 at room temperature for 80s - 220s. Due to the local catalytic of the Ag clusters, this treatment results in the nano-scale texturing on the surface. This resulted in average reflectance values less than 9% after the silver on the surface of the wafers were removed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.326-328
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• 1995

SiC buffer layers were grown on Si(100) substrates by ultra-high-vacuum electron cryclotron resonance plasma (UHV ECR plasma) from $CH_4/H_2$ mixture at 700$^{\circ}C$. The electron densities and temperature were measured by single probe. The axial plasma potentials measured by emissive probe had the double layer structure at positive substrate bias. Piranha cleaning was carried out as ex-situ wet cleaning. Clean and smooth silicon surface were prepared by in-situ hydrogen plasma cleaning at 540$^{\circ}C$. A short exposure to hydrogen plasma transforms the Si surface from 1$\times$1 to 2$\times$1 reconstruction. It was monitored by reflection high energy electron diffraction (RHEED). The defect densities were analysed by the dilute Schimmel etching. The results showed that the substrate bias is important factor in hydrogen plasma cleaning. The low base pressure ($5\times10^{-10}$ torr) restrains the $SiO_2$ growth on silicon surface. The grown layers showed different characteristics at various substrate bias. RHEED and K-ray Photoelectron spectroscopy study showed that grown layer was SiC.

• 대한기계학회논문집A
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• 제30권12호
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• pp.1642-1648
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• 2006

This paper describes enhancement of the mixing efficiency of a multilamination micro mixer by adding a number of recirculation zones downstream of the mixing zone. Numerical simulation was employed to estimate the mixing efficiency and the pressure drop under various conditions. Numerical results indicated that recirculation micro mixer brought about not only the increase of the mixing efficiency but also the decrease of the pressure drop. Micro mixers were fabricated using photosensitive glass by anisotropic wet etching technique. The width and height of the micro channel were $150{\mu}m$ and $500{\mu}m$, respectively. The performance of micro mixer was measured using color intensity variation of the fluid. Except for extremely low Re below 40, the recirculation micro mixer of the present study showed improved mixing. And the enhancement of the mixing increased as Re rose. When Re increased beyond 400, more than 90% of the mixing was observed in the experiment.

• 폴리머
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• 제26권2호
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• pp.253-259
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• 2002

본 연구는 내열성, 저광학손실 광도파로용 고분자재료를 합성하고 그 물성을 조사한 것이다. 열안정성을 높이고 광학손실을 줄이기 위한 pentafluorophenylmaleimide와 복굴절률을 낮추기 위한 두가지 methacrylate 유도체와 가교제 역할을 하는 glycidylmethacrylate를 삼원 공중합하여 광가교가 가능한 poly(maleimide-co-methacrylate)를 합성하였다. 합성된 고분자들은 높은 열안정성을 나타내었고, 열처리에 의해서 가교가 됨을 확인하였다. 고분자의 굴절율은 공중합 비율에 의해서 조절가능하였고, 1.45~l.49 범위의 고분자가 합성되었다. 복굴절은$6{ imes}10^{-4}$ ~ $1{ imes}10^{-4}$ 범위의 낮은 값을 나타내었다. 이 고분자와 광개시제를 사용하여 접촉 인쇄 방식에 의한 노광과 습식 현상을 통해 깨끗한 광도파로 패턴을 얻을 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.552-555
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• 2002

In order to achieve higher performance and low cost a-Si TFT-LCD panel, new material architecture and its process integration for a-Si TFT array manufacturing method were developed. Material combination of low resistant dry-etchable metal and new pixel electrode under currently adopted 4 mask process made it possible to get more-simplified manufacturing method and better device performance for the a-Si TFT-LCD application. Proposed 4 mask process architecture with optimized wet etchants and dry etching process was applicable to various devices such as notebook, monitor and TV.

• Progress in Superconductivity
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• 제9권2호
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• pp.162-166
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• 2008

We are developing a sensitive gamma ray spectrometer based on superconducting transition edge sensors. The detector consists of a small piece of high purity Sn as an absorber and a Ti/Au bilayer as a temperature sensor. It is designed to measure the thermal signal caused by absorption of gamma rays. The mechanical support and the thermal contact between the absorber and the thermometer were made with Stycast epoxy. The bilayer was formed by e-beam evaporation and patterned by wet etching on top of a $SiN_X$ membrane. A sharp superconducting transition of the film was measured near 100 mK. When the film was biased to the edge of the transition, signals were observed due to single photon absorption emitted from an $^{241}Am$ source. The measured spectrum showed several characteristic peaks of the source including 59.5 keV gamma line. The full with at half maximum was about 900 eV for the 59.5 keV gamma line. The background was low enough to resolve low energy lines. Considerations to improve the energy resolution of the gamma ray spectrometer are also discussed.