• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.345-346
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• 2013

InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

• Membrane Journal
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• v.22 no.6
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• pp.404-414
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• 2012

In order to investigate $SO_2$ removal, PEI hollow fiber membranes were produced by a dry-wet phase inversion method. The membrane support layer on surface was coated with PEBAX1657$^{(R)}$ and PEG blending materials. Modules were prepared for the single gas permeation characteristics of composite membrane according to temperature and pressure. As a result, $SO_2$ permeance and $SO_2/N_2$ selectivity were 220~1220 GPU and 100~506 through operating condition, respectively. Moreover, $SO_2/CO_2/N_2$ mixture gas was used to compare the performance of separation properties according to temperature, pressure and retentate flow rate difference. $SO_2$ removal efficiency was increased with pressure and temperature.

• Korean Journal of Environmental Agriculture
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• v.24 no.3
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• pp.295-302
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• 2005

The nitrogen (N) balance in Korea during 1985-1997 was calculated according to the surface balance method of the PARCOM guidelines and compared with Japanese N balance. The some differences were founded in the coefficients used on calculating N balance in two nations. Of the important parameters, which can make a big difference in balance, N input by organic fertilizers was not included in Korea different with Japanese, due to absence of reliable statistics and then made lower the input. Nitrogen destruction rate from livestock manure was adjusted differently with 15% in Korea but 28% in Japan. There was some difference in the conversion factors of livestock number into manure N quantity in two nations, but the gap was ignoble scale except beef cattle. Our manure N production rate of beef cattle might be evaluated to be so lower than Japanese. Biological N fixation by pulses was very higher in Korea than in Japan but scarcely affect the increase of total N input, due to small cultivation area. In contrast, N fixation rate by free-living organisms in Korean and Japanese wet paddies showed the big difference with 7.6 and $37.0kg\;ha^{-1}\;yr^{-1}$, respectively, and therefore $29.4kg\;ha^{-1}\;yr^{-1}$ of nitrogen was estimated to be more inputted in Japan. Although there are many points to be more specified and improved, still, Korean N balance was very high with $250-257kg\;ha^{-1}$ in the mid of 1990s, which was the second highest level in OECD countries and furthermore increased continuously during the investigation. In contrast in Japan, which has similar fanning system with Korea, N balance was lower with $130-158kg\;ha^{-1}$ and has decreased continuously since 1993. This high N balance was mainly due to a high usage of chemical fertilizers in our intensive fanning system and the fast increment of livestock feeding. Therefore, the more active action to decrease chemical fertilizer utilization and reduce livestock feeding density is required in the government and farmer sides.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.330-332
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• 2013

소 분위기에서 플라즈마 표면 처리의 경우 기판 표면에 존재하는 수소와 탄소 유기물들이 산소와 반응하여 $H_2O$와 $CO_2$ 등으로 제거되며 표면에 오존 결합을 유도하여 표면 에너지를 증가시키는 것으로 알려져 있다. ZnO 나노구조물을 성장시키는 방법으로는 MOCVD (Metal-Organic Chemical Vapor Deposited), PLD (Pulsed Laser Deposition), VLS (Vapor-Liquid-Solid), Sputtering, 습식화학합성법(Wet Chemical Method) 방법 등이 있다. 그중에서도 습식화학합성법은 쉽게 구성요소를 제어할 수 있고, 저비용 공정과 낮은 온도에서 성장 가능하며 플렉서블 소자에도 적용이 가능하다. 그러므로 본 연구에서는 플라즈마 표면처리에 따라 표면에너지를 변화하여 습식화학합성법으로 성장시킨 ZnO nanorods의 밀도를 제어하고 photolithography 공정 없이 패터닝 가능성을 유 무를 판단하는 연구를 진행하였다. 기판은 Si wafer (100)를 사용하였으며 세척 후 표면에너지 증가를 위한 플라즈마 표면처리를 실시하였다. 분위기 가스는 Ar/$O_2$를 사용하였으며 입력전압 400 W에서 0, 5, 10, 15, 60초 동안 각각 실시하였다. ZnO nanorods의 seed layer를 도포하기 위하여 Zinc acetate dehydrate [Zn $(CH_3COO)_2{\cdot}2H_2O$, 0.03 M]를 ethanol 50 ml에 용해시킨 후 스핀코팅기를 이용하여 850 RPM, 15초로 5회 실시하였으며 $80^{\circ}C$에서 5분간 건조하였다. ZnO rods의 성장은 Zinc nitrate hexahydrate [$Zn(NO_3)_2{\cdot}6H_2O$, 0.025M], HMT [$C6H_{12}N_4$, 0.025M]를 deionized water 250 ml에 용해시켜 hotplate에 올리고 $300^{\circ}C$에서 녹인 후 $200^{\circ}C$에서 3시간 성장시켰다. ZnO nanorods의 성장 공정은(Fig. 1)과 같다. 먼저 플라즈마 처리한 시편의 표면에너지 측정을 위해 접촉각 측정 장치[KRUSS, DSA100]를 이용하였다. 그 결과 0, 5, 10, 15, 60 초로 플라즈마 표면 처리했던 시편이 각각 Fig. l, 2와 같이 $79^{\circ}$, $43^{\circ}$, $11^{\circ}$, $6^{\circ}$, $7.8^{\circ}$로 측정되었으며 이것을 각각 습식화학합성법으로 ZnO nanorods를 성장 시켰을 때 Fig. 3과 같이 밀도 차이를 확인할 수 있었다. 이러한 결과를 바탕으로 기판의 표면에너지를 제어하여 Fig. 4와 같이 나타나며 photolithography 공정없이 ZnO nanorods를 패터닝을 할 수 있었다. 본 연구에서는 플라즈마 표면 처리를 통하여 표면에너지의 변화를 제어함으로써 ZnO nanorods 성장의 밀도 차이를 나타냈었다. 이러한 저비용, 저온 공정으로 $O_2$, CO, $H_2$, $H_2O$와 같은 다양한 화학종에 반응하는 ZnO를 이용한 플렉시블 화학센서에 응용 및 사용될 수 있고, 플렉시블 디스플레이 및 3D 디스플레이 소자에 활용 가능하다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.30-34
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• 2016

In this paper, we report that selective etching on N-polar face by EC (electro-chemical)-etching effect on the reduction of bowing and strain of FS (free-standing)-GaN substrates. We applied the EC-etching to concave and convex type of FS-GaN substrates. After the EC-etching for FS-GaN, nano porous structure was formed on N-polar face of concave and convex type of FS-GaN. Consequently, the bowing in the convex type of FS-GaN substrate was decreased but the bowing in the concave type of FS-GaN substrate was increased. Furthermore, the FWHM (full width at half maximum) of (1 0 2) reflection for the convex type of FS-GaN was significantly decreased from 601 to 259 arcsec. In the case, we confirmed that the EC-etching method was very effective to reduce the bowing in the convex type of FS-GaN and the compressive stress in N-polar face of convex type of FS-GaN was fully released by Raman measurement.

• Polymer(Korea)
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• v.29 no.5
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• pp.440-444
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• 2005

An increase in the surface area of drugs by reducing particle sizes from microns to nanometers has been known as an efficient method to improve the bioavailability of water-insoluble drugs. To prevent drug nanoparticles from aggregation during the processes of drug formulation, a limited number of pharmaceutical inactive ingredients such as hydroxypropyl cellulose has been employed as stabilizers or dispersants. In this study, copolymers of hydrophilic and hydrophobic amino acids were synthesized by the ring opening polymerization of their N-carboxyanhydride monomers and evaluated as novel candidates to stabilize the nanoparticles of a water insoluble drug, naproxen. Naproxen nanoparticles stabilized by synthesized amino acid copolymers were successfully prepared in the size of $200\~500nm$ in 60 min by a wet comminution process. Particle size analysis showed that the effective stabilization performance of copolymers required the hydrophobic moiety content to be higher than $10 mol\%$. However, the molecular weight and morphology of copolymers was not the critical parameters in determining the particle size reduction. Their particle size was found to be stable up to 14 days without significant aggregation.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.114-119
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• 2004

Silicon Nitride thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method at $550^{\circ}C$ using alternating exposures of $SiH_2Cl_2$ and $NH_3$, and the physical and electrical propeties of the deposited films were characterized. The thickness of the films was linearly increased with the number of deposition cycles, and the growth rate of the films was 0.13 nm/cycle with the reactant exposures of $3.0\times10^{9}$ L. The silicon nitride thin films deposited by Alf exhibited similar physical properties with the silicon nitride thin films deposited by low-pressure chemical vapor deposition (LPCVD) method in terms of refractive index and wet etch rate, lowering deposition temperature by more than 200 $^{\circ}C$. The ALD films showed the leakage current density of 0.79 nA/$\textrm{cm}^2$ at 3 MV/cm, which is lower than 6.95 nA/$\textrm{cm}^2$ of the LPCVD films under the same condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.93-98
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• 2005

The crystal growth of calcite at a low temperature range was carried out by the hydrothermal method using amorphous calcium carbonate which has excellent solubility in water. Amorphous calcium carbonate was prepared by the wet chemical reaction of a stoichiometric mixture of $CaCl_2\;and\;Na_2CO_3$. An important factor was the reaction temperature and time taken in preparation of the amorphous calcium carbonate. From the solubility results calculated by the weight loss method, $NH_4NO_3$ solutions were found to be the most promising solvents to grow calcite single crystals. The hydrothermal conditions for high growth rates of calcite single crystals were as follows: starting material: amorphous calcium carbonate, solvent: 0.01 m $NH_4NO_3$, temperature: $180^{\circ}C$, duration: 30 days. And properties of calcite single crystals were follows: dislocation density: $10^6{\sim}10cm^{-2}$, UV-visible transmittance: about 80% from 190 to 400 nm and birefringence: $0.17{\sim}0.18$. Also, it can be known from the FT-IR results that the absorption peak by injection of $HCO_3^-\;and\;OH^-$ ions was not shown.

• Resources Recycling
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• v.26 no.6
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• pp.65-72
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• 2017

APT (Ammonium paratungstate) is widely used in various industries such as metal cutting tools, drill bits, mining tools, and military inorganic materials. In order to produce high purity APT(S), an impurity purification step in an aqueous $Na_2WO_4$ convert $H_2WO_4$ solution is required. It is difficult to remove impurity Na of 200 ppm or less when $H_2WO_4(S)$ is prepared by adding HCl(Aq) to an aqueous solution of $Na_2WO_4$, which is a well-known conventional wet method. However, in this study, a more economical and efficient method of removing Na through electrodialysis using a cationic membrane was studied. A large amount of Na in aqueous solution of $H_2WO_4$ due to $Na_2CO_3(S)$ which was added to dissolve waste tungsten carbide drill and scrap was removed to 20ppm or less through electrodialysis process, and it was confirmed that the effect of Na removal was great when using electrodialysis.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.