• 한국진공학회지
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• 제9권4호
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• pp.419-427
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• 2000

본 연구는 원자의 주변 환경에 따른 각각의 확산 속도를 구할 수 있는 기구를 제시하였다. STM 또는 HRLEED 등의 실험과 kinetic Monte Carlo(KMC) 시뮬레이션 계산과의 비교를 통하여 테라스 위 흡착 원자의 확산장벽, step 끝 부착 원자의 탈착 확산 장벽, 잘 알려진 Schwoebel 장벽을 포함한 각각의 확산 장벽을 구할 수 있었다. 팔-넓이, 군집 밀도, 거칠기 등이 시뮬레이션 계산과 실험 결과를 비교하는 데에 가장 적절한 원자단위의 구조변수들임을 확인하였고, 특히 아직 잘 사용되지 않은 구조 계수인 가지폭이 확산 장벽을 구별하여 구하는 데에 중요한 역할을 하는 것을 확인하였다.

• 통합자연과학논문집
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• 제4권2호
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• pp.130-136
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• 2011

This study investigated the adsorption characteristics of nickel, zinc and cadmium ions from the aqueous solution onto the alginate bead. Adsorption equilibrium capacities of the heavy metal ions increased with increasing initial pH of the solution. The adsorption equilibrium isotherm of the heavy metal ions was well represented by Langmuir equation. The magnitude of adsorption capacity of the heavy metal ions onto alginate bead was the order of cadmium > zinc > nickel. Kinetic parameters were measured in a batch adsorber to analyze the adsorption rates of the heavy metal ions. The internal diffusion coefficient of the heavy metal ions in the intraparticle were determined by comparing the experimental concentration curves with those predicted from the surface diffusion model (SDM) and pore diffusion model (PDM). The internal diffusion of the heavy metal ions in the intraparticles was explained by PDM.

• 대한치과보철학회지
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• 제30권4호
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• pp.481-492
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• 1992

Author measured the bonding strength between Dental Porcelain and Nonprecious Dental Alloy and analyzed diffusion Phenomena at the interfaceby by Auger electron spectroscopy and also Electron spectroscopy for Chemical Analysis. The each specimen was sputtered with Al, Cr, In and Sn. 1. Ni whic is the main element of the matris of dental nonprecious alloy diffuse more than the other element and the Ni diffusion rate of each specimen was well coordinated with the bonding strength of each. 2. The Sn thin film suppress the diffusion rate of Ni of matrix into the Dental Porcelain than the In or Cr thin films. 3. The Al thin film suppress the diffusion rate of Ni than the Sn thin film. 4. The main coponent of dental porcelain : Al, Si, Mo diffused into the matrix of alloy. It means that the each element of dental alloy and dental porelain diffused into the each other part.

• 한국표면공학회지
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• 제28권3호
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• pp.152-163
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• 1995

A theoretical model which combines gaseous transport and solid state diffusion with the multi-component equilibrium at the gas/pack and gas/coating interfaces was used to study the kinetics of diffusion aluminide coating. The diffusion aluminide coatings were applied by pack cementation with Ni substrate under argon atmosphere in the high activity and the low activity pack containing $NH_4CL$ or $AlF_3$ activator. On the basis of the process conditions, the suggested model allows the surface composition, the growth rate of coating layers and the aluminium concentration profiles in coatings to be calculated. In the case of $NH_4$Cl activator, careful consideration was required in the analysis, because activator contains nitrogen and hydrogen as well as halogen element to activate the pack. A good agreement is obtained between the theoretical predictions and the experimental results.

• 한국안전학회지
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• 제8권2호
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• pp.3-9
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• 1993

For comparison, we used Ca and Mg as reducers to produce TiFe hydrogen stroage alloy from Fe and TiO$_2$by the Reduction-Diffusion process. The results obtained were as follow. \circled1 Ca was found to be effective both for reduction and diffusion processes. Moreover, Ca oxide was easily removed in an NH$_4$Cl solution after the reaction. \circled2 In the case of using Ca as a reducer, the Reduction-Diffusion process is considered to take place in the foiling three steps. First, TiO$_2$is reduced to Ti by Ca over 100$0^{\circ}C$. Second, the atomic Ti drifts in the Ca melt and meets Fe particles. Finally, the atomic Ti diffuses in to the Fe particles. \circled3 In the case of using Mg as a reducer, We found that the reduction reaction of TiO$_2$went well. But the reduced Ti scarcely diffused into Fe particles. This was probably because no Mg melt was formed due to the high vapor pressure of Mg.

• 한국IT서비스학회지
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• 제11권1호
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• pp.305-323
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• 2012

This study examines online social media diffusion across different countries that will help to provide a picture of current global online social network services (SNSs). Analyzing country-level data drawn from 78 nations, we find that non-technological factors such as culture and language as well as technological factors including Internet penetration rate and smartphone adoption rate have significant effects on online social media diffusion. These findings, derived from a broad range of different countries, not only provide theoretical insights into understanding critical factors that enable successful global expansion of online social media services but also help practitioners plan their marketing strategies more effectively in a global context.

• Nuclear Engineering and Technology
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• 제29권1호
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• pp.7-14
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• 1997

Grain boundary diffusion plays a significant role in fission gas release, which is one of the crucial processes dominating nuclear fuel performance. Gaseous fission produce such as Xe and Kr generated during nuclear fission have to diffuse in the grain lattice and the boundary inside fuel pellets before they reach the open spaces in a fuel rod. These processes can be studied by 'tracer diffusion' techniques, by which grain boundary diffusivity can be estimated and directly used for low burn-up fission gas release analysis. However, only a few models accounting for the both processes are available and mostly handle them numerically due to mathematical complexity. Also the numerical solution has limitations in a practical use. In this paper, an approximate analytical solution in case of stationary grain boundary in a polycrystalline solid is developed for the tracer diffusion techniques. This closed-form solution is compared to available exact and numerical solutions and it turns out that it makes computation not only greatly easier but also more accurate than previous models. It can be applied to theoretical modelings for low bum-up fission gas release phenomena and experimental analyses as well, especially for PIE (post irradiation examination).

• Nuclear Engineering and Technology
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• 제43권6호
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• pp.477-488
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• 2011

A formulation is proposed for modelling the process of intra-granular diffusion of fission gas during irradiation of $UO_2$ under both normal operating conditions and power transients. The concept represents a simple extension of the formulation of Speight, including an estimation of the contribution of bubble motion to fission gas diffusion. The resulting equation is formally identical to the diffusion equation adopted in most models that are based on the formulation of Speight, therefore retaining the advantages in terms of simplicity of the mathematical-numerical treatment and allowing application in integral fuel performance codes. The development of the new model proposed here relies on results obtained by means of molecular dynamics simulations as well as finite element computations. The formulation is proposed for incorporation in the TRANSURANUS fuel performance code.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.467-472
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• 2012

In this paper, we present a finite element method (FEM) study on the space charge effects in organic light emitting diodes. The physical model covers all the key physical processes in OLEDs, namely charge injection, transport and recombination, exciton diffusion, transfer and decay as well as light coupling, and thin-film-optics. The exciton model includes generation, diffusion, and energy transfer as well as annihilation. We assumed that the light emission originates from oscillation which thus is embodied as exciton in a stack of multilayer. We discuss the accumulation of charges at internal interfaces and their signature in the transient response as well as the electric field distribution. We also report our investigation on the influence of the insertion of the emission layer (EML) in the bilayer structure.

• 대한전자공학회논문지
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• 제23권6호
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• pp.820-832
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• 1986

In contrast to conventional liquid phase epitaxy of GaAs, surface kinetics limited growth is predominant in selective liquid phase epitaxy. For the stripe openings in the high-index crystal-lographic directions, the well-known facet formations and the decompositions into the low index planes or smooth circular surfaces are observed depending on the growth kinetics. For the low index direction stripe, surface kinetics limited growth is evident. By a numerical calcualtion we show that these phenomena are due to the enhanced masstransport by two dimensional diffusion and growth rate anisotropy which is found to be very stdrong with cusped minima for some singular planes in the solution growth as well as in vapor phase epitaxy. Morphological stability is briefly treated in terms of diffusion and its implications on device application are stated. Tese phenomena may be common to III-V compound semiconductors as well as GaAs.