• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.37-41
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• 2017

Cuprous oxide ($Cu_2O$) is one of the potential candidates as an absorber layer in ultra-low-cost solar cells. $Cu_2O$ is highly desirable semiconducting oxide material for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and high absorption coefficient that absorbs visible light of wavelength up to 650 nm. In addition, $Cu_2O$ has other several advantages such as non-toxicity, low cost and also can be prepared with simple and cheap methods on large scale. In this work, we deposited the $Cu_2O$ thin films by electrodeposition on gold coated $SiO_2/Si$ wafers. We changed the process conditions such as pH of the solution, applied potential on working electrode, and solution temperature. Finally, we confirmed the structural properties of the thin films by XRD and SEM.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.639-647
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• 2001

We present an integrated optical microswitch, composed of silicon waveguides, gold-coaled silicon micromirrors, and electrostatic contact actuators, for applications to the optical signal transceivers. For a low switching voltage, we modify the conventional curled electrode microactuator into a electrostatic microactuator with touch-down beams. We fabricate the silicon waveguides and the electrostatically actuated micromirrors using the ICP etching process of SOI wafers. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of $4.18\pm0.25dB$. We analyze major source of the micromirror loss, thereby presenting guidelines for low-loss micromirror designs. From the fabricated microswitch, we measure the switching voltage of 31.74V at the resonant frequency of 6.89kHz. Compared to the conventional microactuator, the present contact microactuator achieves 77.4% reduction of the switching voltage. We also discuss a feasible method to reduce the switching voltage to 10V level by using the electrode insulation layers having the residual stress less than 30MPa.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.1-6
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• 2004

Zinc sulfide is a semiconductor with wide band gap and high refractive index and hence promising material to be used as ARC on commercial silicon solar cells. Uniform deposition of zinc sulfide (ZnS) by using chemical bath deposition (CBD) method over a large area of silicon surface is an emerging field of research because ZnS film can be used as a low cost antireflection coating (ARC). The main problem of the CBD bath process is the huge amount of precipitation that occurs during heterogeneous reaction leading to hamper the rate of deposition as well as uniformity and chemical stoichiometry of deposited film. Molar concentration of thiorea plays an important role in varying the percentage of reflectance and refractive index of as-deposited CBD ZnS film. Desirable rate of film deposition (19.6 ${\AA}$ / min), film uniformity (Std. dev. < 1.8), high value of refractive index (2.35), low reflectance (0.655) have been achieved with proper optimization of ZnS bath. Decrease in refractive index of CBD ZnS film due to high temperature treatment in air ambiance has been pointed out in this paper. Solar cells of conversion efficiency 13.8 ％ have been successfully achieved with a large area (103 mm ${\times}$ 103 mm) mono-crystalline silicon wafers by using CBD ZnS antireflection coating in this modified approach.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1621-1622
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• 2006

This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristic s were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Also we observed the movement characteristics of PZT actuator with LDV(Laser Doppler Vibrometer) system, oscilloscope and dynamic signal analyzer. Missing nozzles caused by bubbles in chamber were monitored by their resonance frequency. Using the water based ink of viscosity of 4.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets up to 20kHz, 4.4m/s and above 8pL at the different applied driving waveforms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.701-709
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• 2011

In semiconductor wafer fabrication, etching is one of the most critical processes, by which a material layer is selectively removed. Because of difficulty to correct a mistake caused by over etching, it is critical that etch should be performed correctly. This paper proposes a new approach for etch endpoint detection of small open area wafers. The traditional endpoint detection technique uses a few manually selected wavelengths, which are adequate for large open areas. As the integrated circuit devices continue to shrink in geometry and increase in device density, detecting the endpoint for small open areas presents a serious challenge to process engineers. In this work, a high-resolution optical emission spectroscopy (OES) sensor is used to provide the necessary sensitivity for detecting subtle endpoint signal. Partial Least Squares (PLS) method is used to analyze the OES data which reduces dimension of the data and increases gap between classes. Support Vector Machine (SVM) is employed to detect endpoint using the data after PLS. SVM classifies normal etching state and after endpoint state. Two data sets from OES are used in training PLS and SVM. The other data sets are used to test the performance of the model. The results show that the trained PLS and SVM hybrid algorithm model detects endpoint accurately.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.362-366
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• 2018

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.12
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• pp.5412-5419
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• 2011

The need is growing for high-speed spindle because various equipment are becoming more precise, miniaturization and high speed with the development of industries. Air-lubricated dynamic bearings are widely used in the optical lithographic manufacturing of wafers to realize nearly zero friction for the motion of the stage. Air-lubricated dynamic bearing can be used in high-speed, high-precision spindle system and hard disk drive(HDD) because of its advantages such as low frictional loss, low heat generation, averaging effect leading better running accuracy. In the paper, numerical analysis is undertaken to calculate the performance of air-lubricated dynamic bearing with herringbone groove. The static performances of herringbone groove bearings which can be used to support the thrust load are calculated. Electrochemical micro machining($EC{\mu}M$) which is non-contact ultra precision machining method has been developed to fabricate the air-lubricated dynamic bearing and optimum parameters which are inter electrode gap size, concentration of electrolyte, machining time are simulated using numerical analysis program.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.11
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• pp.2085-2092
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• 2016

One of the most important properties of the IC substrate is that it should be uniform over large areas. Among the various physical approaches of wafer defect characterization, special attention is to be payed to the infrared techniques of inspection. In particular, a high spatial resolution, near infrared absorption method has been adopted to directly observe defects in semi-insulating GaAs. This technique, which relies on the mapping of infrared transmission, is both rapid and non-destructive. This method demonstrates in a direct way that the infrared images of GaAs crystals arise from defect absorption process. A new interpretation is presented for the observed reversal of contrast in the infrared absorption of nonuniformly distributed deep centers, related to EL2, in semi-insulating GaAs. The low temperature photoquenching experiment has demonstrated in a direct way that the contrast inverse images of GaAs wafers arise from both absorption and scattering mechanisms rather than charge re-distribution or local variation of bandgap.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.2
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• pp.74-79
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• 2002

In the a rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increases. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to the environmental issue. To resolve this matter, candidates of advanced cleaning processes has been studied. One of them is to apply the electrolyzed water. In this work, Compared with surface on Si wafer with electrolyzed water cleaning and various chemicals cleaning, and analyzed Si wafer surface condition treated with elecoolyzed water by cleaning temperature and cleaning time. Especially. concentrate upon the contact angle. finally, contact angle on surface treated with cathode water cleaning is 17.28, and anode water cleaning is 34.1.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.811-816
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• 2006

The single layered magnetic thin films with anisotropic magnetoresistance behavior have advantage on micro integration due to their low cost in manufacturing. Although the conventional MCo (M=Cu, Ag) amorphous ribbons using a rapid solidification process have showed appropriate for magnetic property for bulk devices, they are not appropriate for micro-scale devices due to their brittleness. We prepared the thermal evaporated 100 nm-thick $Cu_{1-x}Co_x\;and\;Ag_{1-x}Co_x(x=0.1{\sim}0.7)$ films on silicon wafers and investigated the magnetic property of the as-depo films such as magnetization and magnetoresistance ratio. We confirmed that the maximum MR ratio of 1.4 and 2.6% at the external field of 0.5 Tesla in $CuCo_{30},\;AgCo_{40}$ films, respectively. Our result implies that AMR may be slightly less than those of the conventional CuCo and AgCo ribbons due to surface scattering, but their AMR ratio be enough for micro-scale application with easy integration compatibility for the process without surface oxidation.