• 제목/요약/키워드: voltage sensitivity

검색결과 650건 처리시간 0.026초

CMOS Image Sensor with Dual-Sensitivity Photodiodes and Switching Circuitfor Wide Dynamic Range Operation

  • Lee, Jimin;Choi, Byoung-Soo;Bae, Myunghan;Kim, Sang-Hwan;Oh, Chang-Woo;Shin, Jang-Kyoo
    • 센서학회지
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    • 제26권4호
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    • pp.223-227
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    • 2017
  • Conventional CMOS image sensors (CISs) have a trade-off relationship between dynamic range and sensitivity. In addition, their sensitivity is determined by the photodiode capacitance. In this paper, CISs that consist of dual-sensitivity photodiodes in a unit pixel are proposed for achieving wide dynamic ranges. In the proposed CIS, signal charges are generated in the dual photodiodes during integration, and these generated signal charges are accumulated in the floating-diffusion node. The signal charges generated in the high-sensitivity photodiodes are transferred to the input of the comparator through an additional source follower, and the signal voltages converted by the source follower are compared with a reference voltage in the comparator. The output voltage of the comparator determines which photodiode is selected. Therefore, the proposed CIS composed of dual-sensitivity photodiodes extends the dynamic range according to the intensity of light. A $94{\times}150$ pixel array image sensor was designed using a conventional $0.18{\mu}m$ CMOS process and its performance was simulated.

SDB SOI 흘 센서의 온도 특성 (Temperature Characteristics of SDB SOI Hall Sensors)

  • 정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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    • pp.227-229
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    • 1995
  • Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

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부하 역률을 고려한 직접부하제어 실행시 계통의 민감도 분석 (Sensitivity Analysis of the Power System Considering the Load Power Factor While using Direct Load Control)

  • 채명석
    • 전기학회논문지P
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    • 제64권4호
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    • pp.333-336
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    • 2015
  • Recently, the power load is growing larger and because of the environmental limitation of generation, the expansion of generation facilities are becoming more difficult. For that reason the importance of the demand-side resources come to be higher. One method of the demand-side resource, the DLC Program, has executed, and moreover, the loads which are available to be controlled are increasing. It should be considered of some kinds of power system components such as DLCs, because the fact that using the demand resources will be an important part of the power system. This paper considers the power factor of the load-bus which is shedded in the direct load control program. and then analyze the power system using flow sensitivity and voltage sensitivity. In this paper, we assumed two scenarios through the rank of the load power factor at each bus and to compare and evaluate each case, we used Power World for the simulation.

전력 반도체 소자에 적용되는 원통형 PN 접합의 항복전압에 대한 근사식과 민감도 (Approximate Equations and Sensitivity for Breakdown Voltages of Cylindrical PN Junctions in Power Semiconductor Devices)

  • 윤준호;김해미;서현석;조중열;최연익
    • 전기학회논문지
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    • 제57권12호
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    • pp.2234-2237
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    • 2008
  • Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for $r_{j}/Wpp{\leqq}0.3$ and with numerical results for $r_{j}/Wpp{\geqq}0.3$ within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.

계통손실 감소를 위한 전력용 콘덴서의 適正 再配置에 대한 연구 (A Study on the System Loss Minimizing Algorithm by Optimal Re-location of Static Condenser Using System Power Loss Sensitivity)

  • 이상중;김건중;정태호;김원겸;김용배
    • 대한전기학회논문지
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    • 제44권1호
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    • pp.21-24
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    • 1995
  • The larger and the more complicated the system size and configuration grow, the more serious the system loss problem becomes. Exessive system loss causes severs system voltage depression, which even may result in system voltage collapse. This paper proposes an effective tool for minimizing the system power loss by optimal re-location of the static condenser based on the system loss sensitivity index .lambda.$_{Q}$. It is possible to determine the optimal location and amount of VAR investment for minimizing the system loss by priority of .lambda.$_{Q}$ index given for each bus. Several computational techniques for avoiding divergency of the load flow solution are proposed. The loss sensitivity index .lambda.$_{Q}$ uses information of normal power flow equations and their Jacobians. Two case studies proved the effectiveness of the algorithm proposed.posed.

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Effects of Transfer Gate on the Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector

  • Jang, Juneyoung;Seo, Sang-Ho;Kong, Jaesung;Shin, Jang-Kyoo
    • 센서학회지
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    • 제31권1호
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    • pp.12-15
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    • 2022
  • In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

Optimal Voltage and Reactive Power Scheduling for Saving Electric Charges using Dynamic Programming with a Heuristic Search Approach

  • Jeong, Ki-Seok;Chung, Jong-Duk
    • Journal of Electrical Engineering and Technology
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    • 제11권2호
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    • pp.329-337
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    • 2016
  • With the increasing deployment of distributed generators in the distribution system, a very large search space is required when dynamic programming (DP) is applied for the optimized dispatch schedules of voltage and reactive power controllers such as on-load tap changers, distributed generators, and shunt capacitors. This study proposes a new optimal voltage and reactive power scheduling method based on dynamic programming with a heuristic searching space reduction approach to reduce the computational burden. This algorithm is designed to determine optimum dispatch schedules based on power system day-ahead scheduling, with new control objectives that consider the reduction of active power losses and maintain the receiving power factor. In this work, to reduce the computational burden, an advanced voltage sensitivity index (AVSI) is adopted to reduce the number of load-flow calculations by estimating bus voltages. Moreover, the accumulated switching operation number up to the current stage is applied prior to the load-flow calculation module. The computational burden can be greatly reduced by using dynamic programming. Case studies were conducted using the IEEE 30-bus test systems and the simulation results indicate that the proposed method is more effective in terms of saving electric charges and improving the voltage profile than loss minimization.

A Nano-power Switched-capacitor Voltage Reference Using MOS Body Effect for Applications in Subthreshold LSI

  • Zhang, Hao;Huang, Meng-Shu;Zhang, Yi-Meng;Yoshihara, Tsutomu
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권1호
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    • pp.70-82
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    • 2014
  • A nano-power CMOS voltage reference is proposed in this paper. Through a combination of switched-capacitor technology with the body effect in MOSFETs, the output voltage is defined as the difference between two gate-source voltages using only a single PMOS transistor operated in the subthreshold region, which has low sensitivity to the temperature and supply voltage. A low output, which breaks the threshold restriction, is produced without any subdivision of the components, and flexible trimming capability can be achieved with a composite transistor, such that the chip area is saved. The chip is implemented in $0.18{\mu}m$ standard CMOS technology. Measurements show that the output voltage is approximately 123.3 mV, the temperature coefficient is $17.6ppm/^{\circ}C$, and the line sensitivity is 0.15 %/V. When the supply voltage is 1 V, the supply current is less than 90 nA at room temperature. The area occupation is approximately $0.03mm^2$.

감도 해석을 통한 전압안정도 예방제어 알고리듬 개발 (Preventive Control Algorithm Using Sensitivity Analysis in Voltage Stability Assessment.)

  • 한상욱;서상수;이병준;장경철;김태균
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
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    • pp.483-485
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    • 2005
  • In 2003, there was a wide-area blackout in the United States and Canada. More than fifty million people underwent power failure and the estimated financial loss was about four billion dollars. By such wide-area blackouts, the interest in voltage stability has increased gradually. In order to maintain the voltage stability, the preventive control is essential for a contingency. In this paper, a proper preventive control is determined for defined severe contingencies. Among the preventive control methods (generation rescheduling, load curtailment, tap adjusting, injecting the shunt capacitor, and so on.), this paper presents the injection of shunt capacitors by the sensitivity analysis of the voltage stability assessment for preventive controls. The 2006-2010 KEPCO summer peak system is used in case studies.

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도플러 속도계(DVL)를 위한 광대역 수중 음향 트랜스듀서 (Broad-Band Underwater Acoustic Transducer for Doppler Velocity Log)

  • 윤철호;이영필;고낙용;문용선
    • 제어로봇시스템학회논문지
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    • 제19권9호
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    • pp.755-759
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    • 2013
  • A broad-band underwater acoustic transducer that uses thickness vibration mode, derived from a disk type piezoelectric ceramic, has been proposed and designed for DVL (Doppler Velocity Log). Three different types of acoustic transducer were evaluated with respect to the transmitting voltage response, receiving voltage sensitivity and bandwidth of the transducer. The effect of the acoustic impedance matching layer and backing layer is discussed. The results demonstrated that three matching layer with lossy backing layer is the best configuration for underwater transducer. The trial underwater acoustic transducer with three matching layer has a frequency bandwidth of 55%, maximum transmitting voltage response of 200 dB and a maximum receiving voltage sensitivity of -187.3 dB.