• Title/Summary/Keyword: voltage profile

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A Study on Application of Electric Propulsion System using AFE Rectifier for Small Coastal Vessels

  • Jeon, Hyeonmin;Kim, Seongwan;Kim, Jongsu
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.24 no.3
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    • pp.373-380
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    • 2018
  • The small coastal vessel registered in Korea, small coastal vessels with a gross tonnage of 10 tons or less account for 94.6 % and among them, aged vessels over 16 years age indicate 40.6 %. In order to reduce GHG emissions from small coast vessels, discussions are underway to replace aging ships' propulsion units with eco - friendly propulsion facilities, and the electric propulsion ship is emerging as one of the measures. The electric propulsion system using the DFE rectifier, which was applied in the conventional large commercial vessel, was effective in reducing the harmonics and improving the DC output voltage of the DC link stage, but it occupied a large volume and caused an increase in the overall system price. Therefore, in this paper, we propose an electric propulsion system using AFE rectifier with a small volume of system that can be applied to a small coastal vessel. In order to analyze the effectiveness of the overall system, the load profile was applied to obtain accurate and rapid speed tracking performance of the propulsion motor affected by the speed load. In addition, the power factor and total harmonic distortion factor of the voltage and current on the improved power output side are derived through simulation.

Improvement of Etch Rate and Profile by SF6, C4F8, O2 Gas Modulation (SF6, C4F8, O2 가스 변화에 따른 실리콘 식각율과 식각 형태 개선)

  • Kwon, Soon-Il;Yang, Kea-Joon;Song, Woo-Chang;Lim, Dong-Gun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.305-310
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    • 2008
  • Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

IPMSM Design for Sensorless Control Considering Magnetic Neutral Point Shift According to Magnetic Saturation

  • Choi, JaeWan;Seol, Hyun-Soo;Lee, Ju
    • Journal of Electrical Engineering and Technology
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    • v.13 no.2
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    • pp.752-760
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    • 2018
  • In this paper, interior permanent magnet synchronous motor (IPMSM) design for sensorless drive, considering magnetic neutral point shift according to magnetic saturation, has been proposed. Sensorless control was divided into a method based on inductance and a method based on back induced voltage. Because induced voltage is very small at zero or low speed, error in rotor initial position estimation may occur. Using the ratio of saliency addresses this problem. When using high-frequency injections at low speed, the rotor's initial position is estimated at the smallest portion of the inductance. IPMSM has the minimum inductance at the d-axis. However, if magnetic saturation leads to magnetic neutral point variation, following the load current change, there is a change in the minimum point of inductance. In this case, it can lead to failure of initial rotor position estimation. As a result, it is essential that the blocking design has an inductance minimum point shift. As such, in this study, an IPMSM design method, by blocking magnetic neutral point change, has been proposed. After determining the inductance profile based on the finite element analysis (FEA), the results of proposed method were verified.

Optimal Battery Pack Design Tool for the Delivery UAV (배송용 무인항공기를 위한 최적 배터리팩 설계 툴)

  • Jung, Sunghun;Jeong, Heon
    • Journal of the Korea Convergence Society
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    • v.8 no.6
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    • pp.219-226
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    • 2017
  • As the UAV industry is getting matured, various types of UAVs have appeared in many application fields, including filming, reconnaissance, rescue, and etc. and it requires the quick hardware designs, particularly a battery pack, of the UAV. We developed the automatic battery pack design tool for the convenient battery pack configuration design of the hoverable type delivery UAV. With inputs, including current profile, voltage profile, various kinds of cell specifications, desired battery pack voltage, and etc. the automatic battery pack design tool calculates a pack having the minimum weight and the maximum capacity by combining either homogeneous cells or heterogeneous cells. Also, the tool could predict the capacity fading trend of the designed battery pack configuration.

Analysis of Threshold Voltage for Symmetric and Asymmetric Oxide Structure of Double Gate MOSFET (이중게이트 MOSFET의 대칭 및 비대칭 산화막 구조에 대한 문턱전압 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.12
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    • pp.2939-2945
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    • 2014
  • This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

The Position Sensorless Control SRG using the Instantaneous Flux and the Pulse Voltage (순시 자속과 펄스전압 인가를 이용한 위치센서 없는 SRG의 구동)

  • Choi, Yang-Kwang;Kim, Young-Seok;Oh, Sung-Bo;Kim, Young-Jo
    • Proceedings of the KIEE Conference
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    • 2002.07b
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    • pp.1161-1164
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    • 2002
  • The position information of the rotor are required while the SRG(Switched Reluctance Generator) is drived. The position information is generally provided by shaft encoder or resolver. But it is weak in the dusty, high temperator and EMI environment. Therefore, It is required for the sensor to be eliminated from SRG. In this paper, a estimation algorithm for the rotor position of the SRG is introducted and a constant DC-link voltage is controled by PID controller. The estimation algorithm is imple--mened by using the instantaneous flux profile, and the initial position is estimated by injecting high frequency pulse voltage. It is proved that the rotor position is esti--mated very well by the exeriments.

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Precise Comparison of Two-dimensional Dopant Profiles Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques

  • Hyun, Moon-Seop;Yoo, Jung-Ho;Kwak, Noh-Yeal;Kim, Won;Rhee, Choong-Kyun;Yang, Jun-Mo
    • Applied Microscopy
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    • v.42 no.3
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    • pp.158-163
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    • 2012
  • Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various microscopic techniques.

Computer Simulation for High Voltage Thyristor Fabrication (고전압 사이리스터 제작을 위한 Computer Simulation)

  • Kim, Sang-Cheol;Kim, Eun-dong;Kim, Nam-kyun;Bahng, Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.243-246
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    • 2001
  • Thyristor devices have 3-dimensional complicated structure and were sensitive to temperature characteristics. Therefore, it was difficult to optimize thyristor devices design. We have to consider many design parameter to characterize, and trade-off relations. The important parameters to design thyristor devices are cathode structure, effective line width, cathode-emitter shunt structure, gate structure, doping profile and carrier lifetime. So, we must consider that these design parameters were not acted separately. However, there are many difficulties to determine optimized design parameters by experiment. So, We used specific design software to design thyristor devices, and estimated the thyristor devices characteristics.

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GA-based Optimal Reactive Power Dispatch Taking Account of Transmission Loss Re-distribution and Voltage Dependent Load Models (송전손실 재분배와 전압의존형 부하모델을 적용한 GA기반의 무효전력 최적배분)

  • Chae, Myung-Suk;Lee, Myung-Hwan;Kim, Byung-Seop;Shin, Joong-Rin
    • Proceedings of the KIEE Conference
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    • 2000.07a
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    • pp.350-353
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    • 2000
  • This paper presents an algorithm for Optimal Reactive Power Dispatch(ORPD) problem based on genetic algorithm. Optimal reactive power dispatch is particularized to the minimization of transmission line losses by suitable selection of generator reactive power outputs and transformer tap settings. To reduce system loss and improve voltage profile, two methods, Loss Re-Distribution Algorithm (LRDA) and Voltage Dependent Load Model (VDLM), are applied to ORPD. The proposed methods have been evaluated on the IEEE 30 bus system. Each of results have been compared with result of load flow.

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The invariant design of planar magnetron sputtering TFT-LCD

  • Yoo, W.J.;Demaray, E.;Hosokawa;Pethe, R.
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.2
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    • pp.101-106
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    • 1999
  • The main consideration factor to design a magnetron of the sputtering system for TFT-LCD metallization is high sheet resistance (Rs) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to bve considered full target erosion and high film uniformity. After an aluminum-2 at.% and alloy target was installed in a magnetron source and the film was deposited on the glass of 600${\times}$720 mm, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4mtorr and 10kW, the magnet tilt for the high Rs uniformity of 8.38% was 7mm. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.

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