• 제목/요약/키워드: voltage gain

검색결과 1,019건 처리시간 0.025초

개선된 주파수 이득 특성을 갖는 광대역 전압 제어 발진기의 설계 (Design of Wide-band VCO with Improved Frequency Gain Characteristics)

  • 안태원;이원석;문용
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2007년도 하계종합학술대회 논문집
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    • pp.431-432
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    • 2007
  • A general method for both reduced VCO gain ($K_{vco}$) and wide frequency band is to use the switched-capacitor bank LC VCO. However, $K_{vco}$ can fluctuate widely in the wide oscillation frequency range of the VCO. In this paper, a design of wide-band VCO with improved frequency-voltage gain performance is presented. Optimized multiple varacter switching technique is used for reducing its frequency-voltage gain variation.

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교류변환형 트란지스터식 직류증폭회로에 관한 연구 (The study of a chopper-type transistorized d.c. amplifier circuit)

  • 한만춘;최창준
    • 전기의세계
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    • 제18권5호
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    • pp.12-19
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    • 1969
  • The sensitivity of transistorized d.c. amplifiers is mainly limited by drift at operating point caused by ambient temperature changes. A chopper-type transistorized amplifier is necessary to obtain a high sensitivity without recourse to drift compensation which requires the adjustment of several balancing controls. A chopper-stabilized system consisting of an electro-mechanical chopper for input and output and a high-gain a.c. amplifier is designed and analyzed. The gain of the a.c. amplifier, expressed as the ratio of voltages, is larger than 80db in the band of 50C/S - 100KC/S. The complete system gives an open-loop gain of 68db at direct current. The offset voltage is 20.mu.V referred in input and the voltage drift at the input is less than 10.mu.V/hr at 25.deg.C. This type of amplifier would be useful for the high-gain transistorized d.c. amplifier for analog computers. Also, due to the high input impedance, it is suitable for amplification of signals from wide range of source impedances.

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A Wide Voltage-Gain Range Asymmetric H-Bridge Bidirectional DC-DC Converter with a Common Ground for Energy Storage Systems

  • Zhang, Yun;Gao, Yongping;Li, Jing;Sumner, Mark
    • Journal of Power Electronics
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    • 제18권2호
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    • pp.343-355
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    • 2018
  • A wide-voltage-conversion range bidirectional DC-DC converter is proposed in this paper. The topology is comprised of one typical LC energy storage component and a special common grounded asymmetric H-bridge with four active power switches/anti-parallel diodes. The narrow output PWM voltage is generated from the voltage difference between two normal (wider) output PWM voltages from the asymmetric H-bridge with duty cycles close to 0.5. The equivalent switching frequency of the output PWM voltage is double the actual switching frequency, and a wide step-down/step-up ratio range is achieved. A 300W prototype has been constructed to validate the feasibility and effectiveness of the proposed bidirectional converter between the variable low voltage side (24V~48V) and the constant high voltage side (200V). The slave active power switches allow ZVS turn-on and turn-off without requiring any extra hardware. The maximum conversion efficiency is 94.7% in the step-down mode and 93.5% in the step-up mode. Therefore, the proposed bidirectional topology with a common ground is suitable for energy storage systems such as renewable power generation systems and electric vehicles with a hybrid energy source.

친환경 자동차 HDC를 위한 고승압 소프트스위칭 양방향 컨버터 (High Gain Soft switching Bi-directional Converter for Eco-friendly Vehicle HDC)

  • 오세철;박준성;권민호;최세완
    • 전력전자학회논문지
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    • 제17권4호
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    • pp.322-329
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    • 2012
  • This paper proposes a non-isolated bidirectional soft-switching converter with high voltage for high step-up/down and high power applications. Compared to the conventional boost converter the proposed converter can achieve approximately doubled voltage gain using the same duty cycle. The voltage ratings of the switch and diode are reduced to half, which result in the use of devices with lower $R_{DS(ON)}$ and on drop leading to reduced conduction losses. Also, voltage ratings of the passive components are reduced, and therefore the total energy volume is reduced to half. Further, the switch is turned on with ZVS in the CCM operation which results in negligible surge caused leading to reduced switching losses. The validity of the proposed converter is proved through a 10kW prototype.

An Efficient and High-gain Inverter Based on The 3S Inverter Employs Model Predictive Control for PV Applications

  • Abdel-Rahim, Omar;Funato, Hirohito;Junnosuke, Haruna
    • Journal of Electrical Engineering and Technology
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    • 제12권4호
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    • pp.1484-1494
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    • 2017
  • We present a two-stage inverter with high step-up conversion ratio engaging modified finite-set Model Predictive Control (MPC) for utility-integrated photovoltaic (PV) applications. The anticipated arrangement is fit for low power PV uses, the calculated efficiency at 150 W input power and 19 times boosting ratio was around 94%. The suggested high-gain dc-dc converter based on Cockcroft-Walton multiplier constitutes the first-stage of the offered structure, due to its high step-up ability. It can boost the input voltage up to 20 times. The 3S current-source inverter constitutes the second-stage. The 3S current-source inverter hires three semiconductor switches, in which one is functioning at high-frequency and the others are operating at fundamental-frequency. The high-switching pulses are varied in the procedure of unidirectional sine-wave to engender a current coordinated with the utility-voltage. The unidirectional current is shaped into alternating current by the synchronized push-pull configuration. The MPC process are intended to control the scheme and achieve the subsequent tasks, take out the Maximum Power (MP) from the PV, step-up the PV voltage, and introduces low current with low Total Harmonic Distortion (THD) and with unity power factor with the grid voltage.

결합인덕터를 이용한 전압 클램프 3-레벨 고승압 컨버터 (Clamp-mode Three-level High Voltage Gain Boost Converter using Coupled Inductor)

  • 김수한;차헌녕;김흥근;최병조
    • 전력전자학회논문지
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    • 제17권6호
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    • pp.500-506
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    • 2012
  • In this paper, a non-isolated high step-up and high efficiency boost converter is proposed. By using the 3-level boost converter structure, the proposed converter can obtain higher voltage gain than conventional high step-up converters. The voltage spike of the switching device is well clamped by using the clamp circuit composed of a clamp diode and a capacitor and the energy of the leakage inductor of coupled inductor is effectively transferred to output. Due to the 3-level structure, the equivalent switching frequency of the coupled inductor is doubled, which results in reduced inductor size. A 500 W prototype converter is built and tested to verify performance of the proposed converter.

Design Consideration of Half-Bridge LLC Resonant Converter

  • Choi, Hang-Seok
    • Journal of Power Electronics
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    • 제7권1호
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    • pp.13-20
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    • 2007
  • LLC resonant converters display many advantages over the conventional LC series resonant converter such as narrow frequency variation over wide range of load and input variation and zero voltage switching even under no load conditions. This paper presents analysis and design consideration for the half bridge LLC resonant converter. Using the fundamental approximation, the gain equation is obtained, where the leakage inductance in the transformer secondary side is also considered. Based on the gain equation, the practical design procedure is investigated to optimize the resonant network for a given input/output specifications. The design procedure is verified through an experimental prototype of the 115W half-bridge LLC resonant converter.

탭인덕터 부스트 컨버터를 이용한 LED-드라이버 설계 (Design of the Tapped-Inductor Boost Converter for LED Backlights Driving)

  • 정지욱;박동서;이효길;박신균
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2013년도 전력전자학술대회 논문집
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    • pp.177-179
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    • 2013
  • This paper presents an LED driver which requires a high voltage gain (5-6 times). To achieve a high voltage gain, the tapped-inductor boost converter topology was used and through the analysis of converter's steady-state and its dynamic characteristics, the product design's reliability and validity were verified.

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고내압 BCD 소자의 제작 및 전기적 특성에 관한 연구 (A Study on the Fabrication and Electrical Characteristics of High-Voltage BCD Devices)

  • 김광수;구용서
    • 전기전자학회논문지
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    • 제15권1호
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    • pp.37-42
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    • 2011
  • 본 논문에서는 0.35 um BCD 공정을 통한 고내압 BCD 소자와 새로운 구조의 BCD 소자를 제작하여 전기적 특성을 분석하였다. 20 V급 BJT 소자, 30/60 V급 HV-CMOS, 40/60 V급 LDMOS 소자의 전기적 특성을 분석하고, 동일 공정을 통해 높은 전류 이득을 갖는 수직/수평형 NPN BJT와 고내압 특성의 LIGBT 소자를 제안하였다. 제안된 수직/수평형 NPN BJT의 항복전압은 15 V, 전류이득은 100으로 측정되었으며, 고내압 특성의 LIGBT의 항복전압은 195 V, 문턱전압은 1.5 V, Vce,sat은 1.65 V로 측정 되었다.

전원사고 시 3상 계통연계 인버터의 전원 전압 고속 검출 방법 (High Speed Grid Voltage Detection Method for 3 Phase Grid-Connected Inverter during Grid Faults)

  • 최형진;송승호;정승기;최주엽;최익
    • 한국태양에너지학회 논문집
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    • 제29권5호
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    • pp.65-72
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    • 2009
  • The new method is proposed to improve high speed detection of grid voltage phase and magnitude during a voltage dip due to a grid faults. Usually, A LPF(Low Pass Filter) is used in the feedback loop of PLL (Phase Locked Loop) system because the measured grid voltage contains harmonic distortions and sensor noises. so, a new design method of the loop gain of the PI -type controller in the PLL system is proposed with the consideration of the dynamics of the LPF. As a result, a better transient response can be obtained with the proposed design method. The LPF frequency and PI controller gain are designed in coordination according to the steady state and dynamic performance requirement. This paper shows the feasibility and the usefulness of the proposed methods through the computer simulation and the lab-scale experiments.