• Journal of the Korean Society of Industry Convergence
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• v.23 no.2_1
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• pp.139-147
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• 2020

In order to satisfy the voltage levels of the low voltage battery side and high voltage DC bus, a high voltage gain with bidirectional operation is required. In this system, the cost effectiveness of the design is a critical factor; therefore, the system should be designed using a small number of components. This paper propose a novel bidirectional converter composed with a quasi-sepic and switched-indictor network. The proposed converter consists a small number of components with a high voltage gain ratio. Detailed analysis are made with respect to the operating mode, number of components, voltage and current ripple and efficiency. To verify performance of the proposed converter, simulation was performed is this paper. The simulation results are shown to verify the feasibility and performance of the proposed bidirectional converter.

• Proceedings of the KIPE Conference
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• 2019.07a
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• pp.11-13
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• 2019

This paper proposes a novel high step-up non-isolated DC-DC converter, suitable for regulating dc bus in various inherent low voltage micro sources especially for photovoltaic (PV) and fuel cell sources. This novel high voltage Non-isolated Boost DC-DC converter topology is best replacement, where high voltage conversion ratio is required without the transformer and also need continuous input current. Since the proposed topology utilizes the stack-based structure, the voltage gain, and the efficiency are higher than other conventional non-isolated converters. Switches in this topology is easier to control since its control signal is grounding reference. Also, there is no need of extra gate driver and extra power supply for driver circuit, which reduces the cost and size of system. In order to show the feasibility and practicality of the proposed topology principle operation, steady state analysis and simulation result is presented and analyzed in detail. To verify the performance of proposed converter and theoretical analysis 360W laboratory prototype is implemented.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.4
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• pp.276-281
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• 2005

This paper presents a low voltage operating IF QPSK receiver block which is consisted of programmable gain amplifier (PGA) and analog to digital converter. This PGA has 6 bit control and 250MHz bandwidth, $0{\sim}20\;dB$ gain range. Using the proposed PGA architecture (low distortion gain control switch block), we can process the continuous fully differential $0.2{\sim}2.5Vpp$ input/output range and 44MHz carrier with 2 MHz bandwidth signal at 1.8V supply voltage. Using the sub-sampling technique (input freq. is $44{\sim}46MHz$, sampling freq. is 25MHz), we can process the IF QPSK signal ($44{\sim}46MHz$) which is the output of the 6 bit PGA. We can get the SNDR 35dB, which is the result of PGA and ADC at full gain mode. We fabricated the PGA and ADC and the digital signal processing block of the IF QPSK with the 0.18um CMOS MIM process 1.8V Supply.

• ETRI Journal
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• v.42 no.6
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• pp.943-950
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• 2020

We propose 8.2-GHz band radar RFICs for an 8 × 8 phased-array frequency-modulated continuous-wave receiver developed using 65-nm CMOS technology. This receiver panel is constructed using a multichip solution comprising fabricated 2 × 2 low-noise amplifier phase-shifter (LNA-PS) chips and a 4ch RX front-end chip. The LNA-PS chip has a novel phase-shifter circuit for low-voltage operation, novel active single-to-differential/differential-to-single circuits, and a current-mode combiner to utilize a small area. The LNA-PS chip shows a power gain range of 5 dB to 20 dB per channel with gain control and a single-channel NF of 6.4 dB at maximum gain. The measured result of the chip shows 6-bit phase states with a 0.35° RMS phase error. The input P1 dB of the chip is approximately -27.5 dBm at high gain and is enough to cover the highest input power from the TX-to-RX leakage in the radar system. The gain range of the 4ch RX front-end chip is 9 dB to 30 dB per channel. The LNA-PS chip consumes 82 mA, and the 4ch RX front-end chip consumes 97 mA from a 1.2 V supply voltage. The chip sizes of the 2 × 2 LNA-PS and the 4ch RX front end are 2.39 mm × 1.3 mm and 2.42 mm × 1.62 mm, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.10
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• pp.4745-4750
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• 2012

In this paper a $6^{th}$ 1MHz~30MHz bandpass filter for Power line communication(PLC) modem receiver is designed using current mode synthesis method which is good to design the low-voltage and low-power filter. The designed bandpass filter is composed of cascade connecting between $3^{rd}$ Butterworth highpass filter and $3^{rd}$ Chebychev lowpass filter. As a core circuit in the current-mode filter, a current-mode integrator is designed with new architecture which can improve gain and unity gain frequency of the integrator. The gain and the unity gain frequency of the designed integrator is each 32.2dB and 247MHz. And the cutoff frequency of the designed $6^{th}$ bandpass filter can be controlled to 50MHz from 200KHz according to controlling voltage and the power consumption is 2.85mW with supply voltage, 1.8V. The designed bandpass filter was verified using a $0.18{\mu}m$ CMOS parameter.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.159-165
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• 1995

A gate-recessed structure is introduced to SOI MOSFET's in order to increase the source-to-drain breakdown voltage. A significant increase in the breakdown voltage is observed compared with that of a planar single source/drain SOI MOSFET without inducing the appreciable reduction of the current drivability. We have analyzed the origin of the breakdown voltage improvement by the substrate current measurements and 2-D device simulations, and shown that the breakdown voltage improvement is caused by the reductions in the impact ionization rate and the parasitic bipolar current gain.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.321-328
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• 2008

In this paper, variable gain amplifier(VGA) with a gain slope controller has been proposed and verified by circuit simulations and measurements. The proposed VGA has a gain control, gain slope switch and variable gain range. The input source coupled pair with diode connected load is used for VGA gain stage. The gain slope controller with switch can control VGA gain slope. The proposed VGA is fabricated in $0.18{\mu}m$ CMOS process for multi -standard wireless receiver. The proposed two stage VGA consumes min. 2.0 mW to max. 2.6 mW in gain control range and gives input IP3 of -3.77 dBm and NF of 28.7 dB at 1.8 V power supply under -25 dBm, 1 MHz input. The proposed VGA has 37 dB(-16 dB $\sim$ 21 dB) variable gain range, and 8 dB gain range control per 0.3 V control voltage, and can provide variable gain, positive and negative gain slope control, and gain range control. This VGA characteristics provide design flexibility in multi-standard wireless receiver.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.12
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• pp.3614-3621
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• 2009

In this paper, A CMOS low-voltage current mode integrator is designed. The designed current-mode integrator is based on linear cascode circuit that is newly proposed in this paper. When it is compared with gain(43.7dB) and unity gain frequency(15.2MHz) of the typical current-mirror type current-mode integrator, the proposed linear cascode current-mode integrator achieves high current gain(47.8dB) and unity gain frequency(27.8MHz). And a 5th Chebyshev current-mode filter with 7.03MHz cutoff frequency is designed. The designed all circuits are simulated by HSPICE using 1.8V-$0.18{\mu}m$ CMOS technology.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1386-1392
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• 2009

An analysis is presented for super-high-speed optical demodulation by an avalanche photodiode(APD) with electric mixing. A normalized gain is defined to evaluate the performance of the optical mixing detection. Unlike previous work, we include the effect of the nonlinear variation of the APD capacitance with bias voltage as well as the effect of parasitic and amplifier input capacitance. As a results, the normalized gain is dependent on the signal frequency and the frequency difference between the signal and the local oscillator frequency. However, the current through the equivalent resistance of the APD is almost independent of signal frequency. The mixing output is mainly attributed to the nonlinearity of the multiplication factor. We show also that there is an optimal local oscillator voltage at which the normalized gain is maximized for a given avalanche photodiode.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.983-986
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• 2003

This paper describes a 2.5V 80dB 360MHz CMOS VGA. A new variable degeneration resistor is proposed where the dc voltage drop over the degeneration resistor is minimized and employed in designing a low-voltage and high-speed CMOS VGA. HSPICE simulation results using a 0.25${\mu}{\textrm}{m}$ CMOS process parameters show that the designed VGA provides a 3dB bandwidth of 360MHz and a 80dB gain control range in 2dB step. Gain errors are less than 0.4dB at 200MHz and less than 1.4dB at 300MHz. The designed circuit consumes 10.8mA from a 2.5V supply and its die area is 1190${\mu}{\textrm}{m}$$\times$360${\mu}{\textrm}{m}$.