• The Korean Journal of Physiology and Pharmacology
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• v.7 no.5
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• pp.267-273
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• 2003

We have investigated the effect on inducing substate(s) of positively charged residues replaced in position 172 of the second transmembrane domain in murine inward rectifier potassium channels, formed by stable or transient transfection of Kir2.1 gene in MEL or CHO cells. Single channel recordings were obtained from either cell-attached patches or inside-out patches excised into solution containing 10 mM EDTA to rule out the effect of $Mg^{2+}$ on the channel gating. The substate(s) could be recorded with all mutants D172H, D172K and D172R. The unitary current-voltage (I-V) relation was not linear with D172H at $pH_i$ 6.3, whereas the unitary I-V relation was linear at $pH_i$ 8.0. The relative occupancy at $S_{LC}$ was increased from 0.018 at $pH_i$ 8.0 to 0.45 at $pH_i$ 5.5. In H-N dimer, that was increased from 0.016 at $pH_i$ 8.0 to 0.23 at $pH_i$ 5.5. The larger the size of the side chain or $pK_a$ with mutants (D172H, D172K and D172R), the more frequent the transitions between the fully open state and substate within an opening. The conductance of the substate also depended upon the pKa or the size of the side chain. The relative occupancy at substate $S_{LC}$ with monomer D172K (0.50) was less than that in K-H dimer (0.83). However, the relative occupancy at substate with D172R (0.79) was similar to that with R-N dimer (0.82). In the contrary to ROMK1, positive charge as well as negative charge in position 172 can induce the substate rather than block the pore in murine Kir2.1. The single channel properties of the mutant, that is, unitary I-V relation, the voltage dependence of the mean open time and relative occupancy of the substates and the increased latency to the first opening, explain the intrinsic gating observed in whole cell recordings.

• Journal of Ginseng Research
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• v.23 no.4
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• pp.230-234
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• 1999

Potassium channels play an important role in regulating vascular smooth muscle tone. Four types of $K^+$ channels areknown to be expressed in vascular smooth muscle cells, and maxi $Ca^{2+}-activated\;K^+$ channel $(BK_{Ca})$ is a dominant type of $K^+$ channels in these cells. Because total ginseng saponins and ginsenoside $Rg_3$ cause vasodilation with unclear mechanisms, we hypothesized that total ginseng saponins and ginsenoside $Rg_3$ induce vasodilation via activation of maxi $Ca^{2+}-activated\;K+$ channels. Whole-cell BKe. currents were voltage-dependent with half maximum activation at -14 mV, and the currents were sensitive to nanomolar ChTX and millimolar TEA. External application of total ginseng saponins increased the anlplitude of the whole-cell BKe. current in a concentration-dependent manner. Single-channel analysis indicates that total ginseng saponins caused the channel opening for a longer period of time. Ginsenoside $Rg_3$ increased the amplitude of whole-cell $K_{Ca}$ currents without affecting voltage dependence of the currents and increased single-channel open time. Hence, the results suggest that ginseng saponin-induced vasodilation may be due to activation of $K_{Ca}$.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.134-140
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• 2010

We have investigated the contactless electroreflectance (CER) properties of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$/GaAs double heterostructures grown by metal-organic chemical vapour deposition (MOCVD). The CER measurements on the sample were studied as a function of temperature, modulation voltage ($V_{ac}$), and dc bias voltage ($V_{bias}$). Five signals observed at room temperature are related to the GaAs, $In_{0.5}Ga_{0.5}P$, $In_{0.5}(Ga_{0.73}Al_{0.27})_{0.5}P$, $In_{0.5}(Ga_{0.5}Al_{0.5})_{0.5}P$, and $In_{0.5}(Ga_{0.2}Al_{0.8})_{0.5}P$ transitions, respectively. From the temperature dependence of CER spectrum, the Varshni coefficients and broadening parameters were determined and discussed. In addition, we found that the behavior of the CER amplitude for the reverse bias is larger than that of the forward.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.201-205
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• 2002

The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and ＋90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.35-38
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• 2003

Polymer light emitting diode (PLED) with an ITO/MEH-PPV/Al structure were prepared by spin coating method on the ITO (indium tin oxide)/glass substrates, using poly(2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene (MEH-PPV) as the light emitting material. The dependence of heat treatment on the electrical and optical properties for the prepared PLED samples were investigated. The luminance decreased greatly from 630 cd/$\m^2$ to 280 cd/$\m^2$ at 10V input voltage as the heating temperature increased from $65^{\circ}C$ to $170^{\circ}C$. In addition, the luminance efficiency was found to be about 2 lm/W for the sample heat treated at $65^{\circ}C$. These results may be related to the interface roughness and/or the formation of an insulation layer, which is caused by the reaction between electrode and MEH-PPV organic luminescent film layer.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.9-13
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• 2004

Perylene is an interesting material known to have P-type and N-type characteristics at the same time. We prepared perylene thin-films in ultrahigh vacuum with two different deposition rates of 0.1 $\AA$/s and 1.0 $\AA$/s in order to study the dependence of film characteristics on the growth condition. The smaller average grain size with larger surface coverage as well as the better crystallinity were observed on the perylene film prepared under 1.0 $\AA$/s deposition rate in x-ray diffraction (XRD) and atomic force microscopy (AFM) study. For studying electrical property of the film, perylene organic thin-film transistor (OTFT) with gold contacts was fabricated on $SiO_2$/Si surface in UHV condition. The prepared perylene OTFT device shows P-type characteristic. The obtained hole mobility in the current-voltage characteristic curve was$2.23\times10^{-5}\textrm{cm}^2$/Vs.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• The Korean Journal of Physiology and Pharmacology
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• v.2 no.5
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• pp.611-616
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• 1998

Although the $Ca^{2+}-activated\;K^+\;(I_{K,Ca})$ channel is known to play an important role in the maintenance of resting membrane potential, the regulation of the channel in physiological condition is not completely understood in vascular myocytes. In this study, we investigated the role of cytoplasmic $Mg^{2+}$ on the regulation of $I_{K,Ca}$ channel in pulmonary arterial myocytes of the rabbit using the inside-out patch clamp technique. $Mg^{2+}$ increased open probability (Po), but decreased the magnitude of single channel current. $Mg^{2+}-induced$ block of unitary current showed strong voltage dependence but increase of Po by $Mg^{2+}$ was not dependent on the membrane potential. The apparent effect of $Mg^{2+}$ might, thus, depend on the proportion between opposite effects on the Po and on the conductance of $I_{K,Ca}$ channel. In low concentration of cytoplasmic $Ca^{2+},\;Mg^{2+}$ increased $I_{K,Ca}$ by mainly enhancement of Po. However, at very high concentration of cytoplasmic $Ca^{2+},$ such as pCa 5.5, $Mg^{2+}$ decreased $I_{K,Ca}$ through the inhibition of unitary current. Moreover, $Mg^{2+}$ could activate the channel even in the absence of $Ca^{2+}.\;Mg^{2+}$ might, therefore, partly contribute to the opening of $I_{K,Ca}$ channel in resting membrane potential. This phenomenon might explain why $I_{K,Ca}$ contributes to the resting membrane potential where membrane potential and concentration of free $Ca^{2+}$ are very low.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.1
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• pp.1-4
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• 2002

To obtain the blue emission of powder electroluminescent device, the emission properties of ZnS:Cu were estimated by the variation of applied frequency and the addition of dye to ZnS:Cu phosphor. The variation of applied frequency was from 400 to 4kHz and the addition ratio of dye was from 0 to 5 weight percent respectively. The increment of applied frequency made that emission peaks were shifted from 500.5nm and 460nm at 400Hz to 490nm and 450nm at 4kHz. CIE coordinate system was shifted from x=0.1647, y=0.3711 at 400Hz to x=0.1543, y=0.1856 at 4kHz. On the basis of applied voltage 100V, 400Hz, the increment of addition ratio of dye also made that emission peak was shifted from 505nm(0wt%) to 490nm(5wt%) and the CIE coordinate system was shifted from x=0.1647, y=0.3711(0wt%) to x=0.1334, y=0.2363 (5wt%). The brightness was increased from 60 cd/$m^2$(400Hz) to 174 cd/$m^2$(4kHz) with increment of frequency. When the addition ratio of dye was above 1wt%, the brightness was decreased below 42% of initial brightness and changed from 60 cd/$m^2$(0wt%) to 20.84 cd/$m^2$(5wt%).

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.