• 전기의세계
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• v.25 no.2
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• pp.87-91
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• 1976

Experimentally to investigate the conductive characteristic of oil-immersed paper, we observed the leakage current-voltage characteristic of oil-immersed paper, the temperature dependence of ionization rate and the effect of metal electrode on the leakage current. The results showed that the leakage current-voltage characteristic generally followed the experimental equation i=i$_{0}$ exp (K.root.E) and the slope K did not change by the temperature and electric strength, but only when the direct voltage was applied. And also the leakage current seemed to depend on the work function of metal electrode. From the above results we concluded that the deterioration of oil-immersed paper was not only caused by the thermionic emission from the cathode but also by the conductive property of oil-immersed paper in itself and the work function of metal electrode.e.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1001-1007
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• 1996

The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.

• Solar Energy
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• v.19 no.4
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• pp.63-69
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• 1999

The conventional grid connected PV(Photovoltaic) system has a unstable output pattern due to its dependence on the weather condition, although solar-cell array averagely has a regular output characteristics to have a peak output nearly at noon. Therefore assuming the high density grid connection in the future, this unstable output pattern can be one of the main reasons to generate power disturbance such as voltage variation, frequency variation and harmonic voltage generation in low voltage distribution line. However general grid connected solar-cell system do not have functions to cope with these disturbances. Therefore this study proposed a advanced type grid connected PV system with functions to suppress output power fluctuation due to solar-cell array output variation and showed the levelling effect of fluctuation due to instantaneous array output variation.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.626-632
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• 1995

In this paper, The effect of the impedances in SNOSFET's memory devices has been developed. The effect of source and drain impedances measured by means of two bias resistances - field effect bias resistance by inner region, external bias resistance. The effect of the impedances by source and drain resistance shows the dependence of the function of voltages applied to the gate. It shows the differences of change in source drain voltage by means of low conductance state and high conductance state. It shows the delay of threshold voltages. The delay time of low conductance state and high conductance state by the impedances effect shows 3[.mu.sec] and 1[.mu.sec] respectively.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.237-238
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• 2014

A studies about HID resonanse ignition circuit. it need more than 2kV of the output voltage. then the breakdown voltage of the output capacitor must be higher, size of the capacitor must be larger, and price are higher. so were studied possible ways by resonating by distributing the secondary number of turns of the transformer, it would reduce the breakdown voltage of the output capacitor. we also studied the method can be lit at long distance, to control the resonance frequency in dependence on its parasitic capacitor that vary according to the length of the wire.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.130-134
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• 2022

An anti-reflective coating is used to improve the performance of the solar cell. The anti-reflective coating changes the value of the short-circuit current about the thickness. However, the current-voltage characteristics about the anti-reflective coating are difficult to calculate without simulation tool. In this paper, a modeling technique to determine the short-circuit current value and the current-voltage characteristics in accordance with the thickness is proposed. In addition, artificial neural network is used to predict the short-circuit current with the dependence of temperature and thickness. Simulation results incorporating the artificial neural network model are obtained using MATLAB/Simulink and show the current-voltage characteristic according to the thickness of the anti-reflective coating.

• Proceedings of the IEEK Conference
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• summer
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.11
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• pp.1571-1577
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• 2013

Electrical tree structure is one of the most important influencing factors for electrical treeing characteristics in polymers. In this paper, we focused on the structure characteristics of electrical treeing in epoxy resins (original) insulation under different high-frequency voltages (60, 500, 1000Hz). Effects of voltage frequency on the ac electrical treeing phenomena in an epoxy resins were carried out in needle-plate electrode arrangement. To measure the treeing initiation and propagation, and the breakdown rate, constant AC of 10 kV with three different voltage frequencies (60, 500 and 1,000 Hz) was applied to the specimen in needle-plate electrode specimen at $30^{\circ}C$ of insulating oil bath. At 60 Hz, the treeing initiation time was 360 min and the propagation rate was $6.85{\times}10^{-4}mm/min$, and the morphology was dense branch type. As the voltage frequency increased, the treeing initiation time decreased and the propagation rate increased. At 1,000 Hz, the treeing initiation time was 0 min and the propagation rate was $7.81{\times}10^{-2}mm/min$, and the morphology was dense bush type.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.2
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• pp.128-133
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• 2008

This paper describes underwater discharge phenomena and breakdown characteristics in case that the standard lightning impulse voltage is injected to the needle and spherical electrodes installed in the hemisphere water tank. The objective of this work is to understand the basic features related to transient ground impedance against lightning surges. The discharge luminous images were observed and the dependence of breakdown voltage on the polarity of applied voltage and water resistivity were investigated. As a consequence, streamer corona is initiated at the tip of needle and spherical electrodes and is propagated toward grounded tank with stepwise extension. The breakdown voltage characteristics measured as a function of water resistivity showed V-shaped curves. Breakdown voltage and time curve of needle electrode is higher than that of spherical electrode.