• 한국결정성장학회지
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• 제20권4호
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• pp.164-167
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• 2010

본 연구에서는 HVPE을 이용하여 sapphire(001) 기판 위에 직경 2 inch, 두께 약 1.5 mm인 bulk GaN를 성장하고, 이를 mechanical polishing을 통해 $10{\times}10,\;15{\times}15$ mm 크기의 free-standing GaN template을 제작하여 그 특성을 평가하였다. 성장된 GaN 단결정의 X-ray diffraction pattern 결과 (002) 및 (004) 면으로부터의 회절에 의한 peak가 나타났으며, (002) 면의 DCXRD(Double crystal X-Ray diffraction) rocking curve peak의 반치폭(FWHM)은 98 arcsec으로 나타났다. 제작한 GaN template는 363 nm 파장에서 sharp한 PL spectrum을 나타내었으며, 불순물 defect에 의한 yellow 영역에서의 broad peak은 관찰되지 않았으며, 제작된 GaN template표면의 etch-pit 밀도는 $5{\times}10^6/cm^2$으로 매우 낮았다. 이러한 분석결과를 통하여 성장된 GaN template는 LED 및 LD 등의 청색 발광소자 및 고온, 고출력 소자용 기판재료로 응용이 가능할 것으로 생각 된다.

• 한국결정성장학회지
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• 제29권4호
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• pp.179-186
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• 2019

본 연구에서는 $Ga_2O_3$ 박막의 구조적 특성과 Ti/Au 전극을 증착하여 제작된 metal-semiconductor-metal (MSM) photodetector 소자의 광학적, 전기적 특성에 대해 연구하였다. 유기 금속 화학 증착법(metal organic chemical vapor deposition, MOCVD)을 이용해 서로 다른 온도에서 $Ga_2O_3$ 박막을 성장하였다. 성장온도에 따라 $Ga_2O_3$의 결정상이 ${\varepsilon}$-상에서 ${\beta}$-상으로 변화하는 것을 확인할 수 있었다. X-선 회절 분석(X-ray diffraction, XRD) 결과로 ${\varepsilon}-Ga_2O_3$의 결정구조를 확인하였고, 주사 전자 현미경(scanning electron microscopy, SEM) 이미지로 결정구조의 형성 메커니즘에 대해 논의하였다. 음극선 발광(Cathode luminescence, CL) 측정으로 $Ga_2O_3$의 발광성 천이에 관여하는 에너지 준위의 형성 원인에 대해 논의하였다. 제작된 MSM photodetector 소자의 외부 광에 대한 전류-전압 특성과 시간 의존성 on/off 광 응답 특성을 통해 ${\varepsilon}-Ga_2O_3$로 제작한 photodetector는 가시광보다 266 nm UV 파장 영역에서 훨씬 뛰어난 광전류 특성을 보이는 것을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Current Photovoltaic Research
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• 제4권1호
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• pp.25-29
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• 2016

$Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

• 한국결정성장학회지
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• 제21권4호
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• pp.137-146
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• 2011

Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.270-271
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• 2008

Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

• 대한화학회지
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• 제56권5호
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• pp.597-602
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• 2012

본 연구는 triacetoxyvinlysilane을 첨가제로 사용하여 교차결합제인 EGDMA (ethylene glycol dimethacrylate)와 HEMA (2-hydroxyethyl methacrylate), MMA (methyl methacrylate), MA (methacrylic acid) 그리고 개시제인 AIBN (azobisisobutyronitrile)과 함께 공중합 하였다. 생성된 고분자의 물리적 특성을 측정한 결과, 함수율 35.63~32.44%, 굴절률 1.4382~1.4480, 가시광선 투과율 89.0~92.5%, 인장강도는 0.346~0.674 kgf를 나타내었다. 기본 모노머 조합에 triacetoxyvinlysilane을 첨가한 조합과 1%의 hexamethylene diisocyanate를 첨가하여 중합한 조합의 물성을 비교한 결과 hexamethylene diisocyanate 1%를 첨가하여 중합한 렌즈의 인장강도가 더 큰 값을 나타내었다. 본 실험결과로 볼 때 생성된 공중합체는 내구성 및 인장강도가 우수한 안의료용 렌즈 재료로 사용될 수 있을 것으로 판단된다.

• 대한화학회지
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• 제54권6호
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• pp.761-765
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• 2010

Poly (N,N-dimethylacrylamide)는 수용성과 생체적합성이 뛰어나 다양한 분야에서 매우 유용하게 사용되고 있다. 본 연구는 N,N-dimethylacrylamide를 교차결합제인 EGDMA (ethylene glycol dimethacrylate)와 HEMA (2-hydroxyethyl methacrylate), MMA (methyl methacrylate), NVP (N-vinyl-2-pyrrolidone) 그리고 개시제인 AIBN (azobisisobutyronitrile)과 함께 공중합 하였다. 생성된 고분자의 물리적 특성을 측정한 결과, 함수율 36 - 42%, 굴절률 1.433 - 1.426, 가시광선 투과율 90 - 91%, 산소전달율 13.1 - $21.29{\times}10^{-11}(cm^2/sec)$ ($mlO_2/mL{\times}mmHg$) 범위의 분포를 나타내었다. 또한 polarographic method에 의한 공중합체의 산소전달율을 측정한 결과 N,N-dimethylacrylamide의 함량이 증가할수록 11.0% - 80.5% 증가한 결과를 보였다. 본 실험결과로 볼 때 생성된 공중합체는 고산소투과성을 지닌 하이드로젤 렌즈 재료로 사용될 수 있을 것으로 판단된다.

• 한국재료학회지
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• 제15권8호
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• pp.508-513
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• 2005

[ $TiO_2-Fe_2O_3$ ] nanocomposite powders for magnetic photocatalyst were synthesized by sol-gel process, in which $TiO_2$ photocatalytic layer was formed on the surface of $\gamma-Fe_2O_3$ magnetic core. Transmission electron microscopy (TEM) observation and X-ray diffractometry (XRD) analysis revealed that$\gamma-Fe_2O_3$ nanoparticles, $10\~20nm$ in diameter, were coated by $TiO_2$ shell of 5nm in thickness and $TiO_2$ was anatase phase. Also hydroxyl group (-OH) used to decompose organic compounds was detected by Fourier transformation infrared spectrometry(FT-IR) analysis. UV-Visible spectrophotometry results showed that light absorption occurred in the wavelength range of $400\~700 nm$, and the band gap energy $(E_g)$ of powder was 1.8 eV. Finally it was found that the coercivity $(H({ci})$ and saturation magnetization $(M_s)$ of the powder were 79 Oe and 14.8 emu/g, respectively as experimental vibrating sample magnetometer (VSM) measurements.

• 한국재료학회지
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• 제27권4호
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• pp.206-210
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• 2017

In this study, an ${\alpha}-Fe_2O_3$ (hematite) coated porcelain plate was sintered in a temperature range from $1100^{\circ}C$ to $1250^{\circ}C$ using ferrous sulfate. The specimens were investigated by X-ray diffractometer (XRD), scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), and UV-visible spectrophotometer. It was confirmed that ${\alpha}-Fe_2O_3$ (hematite) was densely fused to the surface at several tens of ${\mu}m$, the ${\alpha}-Fe_2O_3$ (hematite) was in the form of thin platelet and polyhedra, and no other compounds appeared in the sintering process. In the specimen coated with ${\alpha}-Fe_2O_3$ (hematite), the reflectance spectra show a red absorption band of 560-650 nm. The $L^*$ value decreased from 53.18 to 46.94 with the firing temperature. The values of $a^*$ and $b^*$ were at 19.03 and 15.25 at $1100^{\circ}C$ and gradually decreased with increasing temperature; these values decreased rapidly at $1250^{\circ}C$ to 11.54 and 7.98, respectively. It is considered that the new phases are formed by the phase transition of the porcelain plate (clay), and thus the $a^*$ and $b^*$ values are greatly influenced.