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http://dx.doi.org/10.6111/JKCGCT.2019.29.4.179

Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors  

Park, Sang Hun (Department of Materials Engineering, Korea Maritime and Ocean University)
Lee, Han Sol (Department of Materials Engineering, Korea Maritime and Ocean University)
Ahn, Hyung Soo (Department of Materials Engineering, Korea Maritime and Ocean University)
Yang, Min (Department of Materials Engineering, Korea Maritime and Ocean University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.29, no.4, 2019 , pp. 179-186 More about this Journal
Abstract
In this study, we investigated the structural properties of $Ga_2O_3$ thin films and the photo-electrical properties of metal-semiconductor-metal (MSM) photodetectors deposited by Ti/Au electrodes. $Ga_2O_3$ thin films were grown at different temperatures using metal organic chemical vapor deposition (MOCVD). The crystal phase of $Ga_2O_3$ changed from ${\varepsilon}$-phase to ${\beta}$-phase depending on the growth temperature. The crystal structure of ${\varepsilon}-Ga_2O_3$ was confirmed by X-ray diffraction (XRD) analysis and the formation mechanism of crystal structure was discussed by scanning electron microscopy (SEM) images. From the results of current-voltage (I-V) and time-dependent photoresponse characteristics under the illumination of external lights, we confirmed that the MSM photodetector fabricated by ${\varepsilon}-Ga_2O_3$ showed much better photocurrent characteristics in the 266 nm UV range than in the visible range.
Keywords
${\varepsilon}-Ga_2O_3$; MOCVD; Structural properties; MSM photodetector; Photo-electric properties;
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