• Title/Summary/Keyword: vertical interface

Search Result 375, Processing Time 0.023 seconds

Analytical solutions for crack initiation on floor-strata interface during mining

  • Zhao, Chongbin
    • Geomechanics and Engineering
    • /
    • v.8 no.2
    • /
    • pp.237-255
    • /
    • 2015
  • From the related engineering principles, analytical solutions for horizontal crack initiation and propagation on a coal panel floor-underlying strata interface due to coal panel excavation are derived in this paper. Two important concepts, namely the critical panel width of horizontal crack initiation on the panel floor-underlying strata interface and the critical panel width of vertical fracture (crack) initiation in the panel floor, have been presented. The resulting analytical solution indicates that: (1) the first criterion can be used to express the condition under which horizontal plane cracks (on the panel floor-underlying strata interface or in the panel floor because of delamination) due to the mining induced vertical stress will initiate and propagate; (2) the second criterion can be used to express the condition under which vertical plane cracks (in the panel floor) due to the mining induced horizontal stress will initiate and propagate; (3) this orthogonal set of horizontal and vertical plane cracks, once formed, will provide the necessary weak network for the flow of gas to inrush into the panel. Two characteristic equations are given to quantitatively estimate both the critical panel width of vertical fracture initiation in the panel floor and the critical panel width of horizontal crack initiation on the interface between the panel floor and its underlying strata. The significance of this study is to provide not only some theoretical bases for understanding the fundamental mechanism of a longwall floor gas inrush problem but also a benchmark solution for verifying any numerical methods that are used to deal with this kind of gas inrush problem.

A Vertical Handover Scheme Using Proxy Binding Update (프록시 바인딩 갱신을 이용한 수직적 핸드오버 기법)

  • Park, Hee-Dong
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.10 no.1
    • /
    • pp.15-20
    • /
    • 2010
  • This paper proposes a multihoming-based vertical handover scheme using Proxy binding update to minimize handover delay and packet loss while a mobile node moves to a heterogeneous access network. When a mobile node moves to a heterogeneous access network, the proposed scheme can provide a mobile node with fast and seamless handover by performing layer-3 handover using its new interface while the other interface is still communicating in the old access network. The proposed Proxy binding update is different from the Mobile IP binding update in that it includes home addres (HoA) of the old interface instead of the new interface. The performance analysis shows that the proposed scheme can efficiently reduce vertical handover delay and packet loss.

Experimental Performance Evaluation of Vertical Handover with Virtual Interface in Heterogeneous Mobile Networks (이종 무선네트워크에서 가상인터페이스기반 수직적 핸드오버 실증 성능 평가)

  • Cho, Il-Kwon;Yun, Dong-Geun;Ha, Sang-Yong;Choi, Seong-Gon
    • The KIPS Transactions:PartC
    • /
    • v.19C no.2
    • /
    • pp.127-134
    • /
    • 2012
  • In this paper, we propose a mobility management scheme which has a simple IP emulation method based on virtual interface. This scheme supports prevention of service abortion resulting from RAT (Radio Access Technology) interface switching during vertical handover and provides mobility management convenience according to maintenance of consistency in simple IP mobility management scheme of 3rd generation mobile network. Through the empirical experiments of proposed method, we check out the improvement of handover performance of the proposed scheme based on vertical handover latency comparing with a non-virtual interface system.

Differential settlements in foundations under embankment load: Theoretical model and experimental verification

  • Wang, Changdan;Zhou, Shunhua;Wang, Binglong;Guo, Peijun;Su, Hui
    • Geomechanics and Engineering
    • /
    • v.8 no.2
    • /
    • pp.283-303
    • /
    • 2015
  • To research and analyze the differential settlements of foundations specifically, site investigations of existing railways and metro were firstly carried out. Then, the centrifugal test was used to observe differential settlements in different position between foundations on the basis of investigation. The theoretical model was established according to the stress diffusion method and Fourier method to establish an analytical solution of embankment differential settlement between different foundations. Finally, theoretical values and experimental values were analyzed comparatively. The research results show that both in horizontal and vertical directions, evident differential settlement exists in a limited area on both sides of the vertical interface between different foundations. The foundation with larger elastic modulus can transfer more additional stress and cause relatively less settlement. Differential settlement value decreases as the distance to vertical interface decreases. In the vertical direction of foundation, mass differential settlement also exists on both sides of the vertical interface and foundation with larger elastic modulus can transfer more additional stress. With the increase of relative modulus of different foundations, foundation with lower elastic modulus has larger settlement. Meanwhile, differential settlement is more obvious. The main error sources in theoretical and experimental values include: (a) different load form; (b) foundation characteristics differences; (c) modulus conversion; (d) effect of soil internal friction.

Nonlinear analysis of finite beam resting on Winkler foundation with consideration of beam-soil interface resistance effect

  • Zhang, L.;Zhao, M.H.;Xiao, Y.;Ma, B.H.
    • Structural Engineering and Mechanics
    • /
    • v.38 no.5
    • /
    • pp.573-592
    • /
    • 2011
  • Comprehensive and accurate analysis of a finite foundation beam is a challenging engineering problem and an important subject in foundation design. One of the limitation of the traditional Winkler elastic foundation model is that the model neglects the effect of the interface resistance between the beam and the underneath foundation soil. By taking the beam-soil interface resistance into account, a deformation governing differential equation for a finite beam resting on the Winkler elastic foundation is developed. The coupling effect between vertical and horizontal displacements is also considered in the presented method. Using Galerkin method, semi-analytical solutions for vertical and horizontal displacements, axial force, shear force and bending moment of the beam under symmetric loads are presented. The influences of the interface resistance on the behavior of foundation beam are also investigated.

Marginal bone level changes in association with different vertical implant positions: a 3-year retrospective study

  • Kim, Yeon-Tae;Lim, Gyu-Hyung;Lee, Jae-Hong;Jeong, Seong-Nyum
    • Journal of Periodontal and Implant Science
    • /
    • v.47 no.4
    • /
    • pp.231-239
    • /
    • 2017
  • Purpose: To retrospectively evaluate the relationship between the vertical position of the implant-abutment interface and marginal bone loss over 3 years using radiological analysis. Methods: In total, 286 implant surfaces of 143 implants from 61 patients were analyzed. Panoramic radiographic images were taken immediately after implant installation and at 6, 12, and 36 months after loading. The implants were classified into 3 groups based on the vertical position of the implant-abutment interface: group A (above bone level), group B (at bone level), and group C (below bone level). The radiographs were analyzed by a single examiner. Results: Changes in marginal bone levels of $0.99{\pm}1.45$, $1.13{\pm}0.91$, and $1.76{\pm}0.78mm$ were observed at 36 months after loading in groups A, B, and C, respectively, and bone loss was significantly greater in group C than in groups A and B. Conclusions: The vertical position of the implant-abutment interface may affect marginal bone level change. Marginal bone loss was significantly greater in cases where the implantabutment interface was positioned below the marginal bone. Further long-term study is required to validate our results.

The Effects of Swiping Orientation on Preference and Willingness to Pay: The Interaction Between Touch Interface and Need-For-Touch

  • Ren, Han;Kang, Hyunmin;Ryu, Soohyun;Han, Kwanghee
    • Science of Emotion and Sensibility
    • /
    • v.20 no.4
    • /
    • pp.65-78
    • /
    • 2017
  • The current study examined the influence of individual trait such as Need-For-Touch level (NFT; high vs. low) and swiping orientation (vertical vs. horizontal) on product evaluation and preference when using touch-screen interface like a smart phone and a tablet. Swiping is one of the most common interaction techniques for changing pages or searching some aligned pictures on touch-screen interface and it can be used in vertical and horizontal orientations. The experiment revealed a significant interaction between swiping orientation and NFT on preference, however the interaction on change-in-price of given products was only marginally significant. To be specific, high NFT participants reported higher preference for horizontal-swipe than vertical-swipe products, but such difference did not occur with low NFT participants. The current study illustrates the influence of swiping orientation and NFT on product preference and it provides a new perspective of design principles especially for online shopping websites.

Fundamental Study on Analysis of the Bonding Effect on Asphalt Pavement (아스팔트포장의 경계층 영향에 대한 해석적 기초연구)

  • Choi, Jun-Seong
    • International Journal of Highway Engineering
    • /
    • v.7 no.3 s.25
    • /
    • pp.11-21
    • /
    • 2005
  • To examine adequacy of existing multi-layer elastic analysis of layer interface conditions, this study compared outputs of finite element analysis and multi-layer elastic analysis as vertical load was applied to the surface of asphalt pavements. Structural pavement analysis considering influence of a horizontal load was also carried out in order to simulate passing vehicle loads under various interface conditions using ABAQUS, a three dimensional finite element program. Pavement performance depending on interface conditions was quantitatively evaluated and fundamental study of layer interface effect was performed in this study. As results of the study, if only vertical load is applied, subdivision of either fully bonded or fully unbonded is enough to indicate interface condition. On the other hand, when horizontal load is applied with vertical load, pavement behavior and performance are greatly changed with respect to layer interface condition.

  • PDF

Magnetic Sensitivity Improvement of 2-Dimensional Silicon Vertical Hall Device (2 차원 Si 종형 Hall 소자의 자기감도 개선)

  • Ryu, Ji-Goo
    • Journal of Sensor Science and Technology
    • /
    • v.23 no.6
    • /
    • pp.392-396
    • /
    • 2014
  • The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

Magnetic Sensitivity Improvement of Silicon Vertical Hall Device (Si 종형 Hall 소자의 자기감도 개선)

  • Ryu, Ji-Goo;Kim, Nam-Ho;Chung, Su-Tae
    • Journal of Sensor Science and Technology
    • /
    • v.20 no.4
    • /
    • pp.260-265
    • /
    • 2011
  • The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.