• Journal of the korean society of oceanography
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• 제32권1호
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• pp.8-16
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• 1997

The ventilation theory developed by Luyten, Pedlosky and Stommel (1983) is applied to the East Sea to understand the general circulation pattern of the Intermediate Water, especially the ventilated circulation beneath the Tsushima Warm Current. The original model is slightly modified such that it takes the inflow-outflow of the Tsushima Current into consideration. Results of the model indicate that for sufficiently strong Ekman pumping, the Intermediate Water circulates cyclonically by ventilation. The Intermediate Water subducts beneath the Tsushima Warm Water through the western boundary layer. Off the western boundary layer, it turns northward, outcrops to the north by passing the polar front and continues to flow northward until it finally is absorbed by the northern boundary layer. This result seems to be compatible with some recent observations. Over the ventilated area, the transport of the Tsushima Current is negligible and most transport occurs in the shadow area where the Intermediate layer is motionless indicating that, over the deep motionless layer, the two-layered vertical structure under consideration becomes substantially single-layered.

• Journal of the korean society of oceanography
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• 제39권1호
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• pp.35-45
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• 2004

Based on the MASNUM wave-current coupled model, the temperature and salinity structures along $36^{\circ}N$ in the Yellow Sea are simulated and compared with observations. Both the position and strength of the simulated thermocline are similar to data analysis. The wave-induced mixing is strongest in winter and plays a key role in the formation of the upper mixed layer in spring and summer. Numerical experiments suggest that in the coastal area, wave-induced mixing and tidal mixing control the vertical structure of temperature and salinity.

• 대한원격탐사학회:학술대회논문집
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• 대한원격탐사학회 2006년도 Proceedings of ISRS 2006 PORSEC Volume II
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• pp.926-929
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• 2006

Some features of vertical structure of the frontal interaction zone of the warm Kuroshio Current and cold Oyashio Current are known from 1930 from analysis of ship data. Ship data however do not allow carrying out the area detailed survey opposite to satellite infrared (IR) observations which possess by high spatial and temporal resolution. Analysis of NOAA AVHRR IR images demonstrated that process of formation and development of the Kuroshio warm core rings is highly complex. They are formed as a result of development of anticyclonic meanders of the warm Kuroshio waters and spin off them from the current. Joint analysis of thermal infrared images and altimetry data has also indicated that interaction of eddies to the frontal zone plays a crucial role in formation of large eddies moving to the Southern Kuril region.

• 대한원격탐사학회:학술대회논문집
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• 대한원격탐사학회 2007년도 Proceedings of ISRS 2007
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• pp.85-89
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• 2007

This paper presents the method to provide a fast service for user in image manipulation such as zooming and panning of huge size high resolution satellite image (e.g. Giga bytes per scene). The proposed technique is based on the hierarchical structure that has 3D-Tiling in horizontal and vertical direction to provide the image service more effectively than 2D-Tiling technique in the past does. The essence of the proposed technique is to create tiles that have optimum level of horizontal as well as vertical direction on the basis of current displaying area which changes as user manipulates huge image. So this technique provides seamless service, and will be very powerful and useful for manipulation of images of huge size without data conversion.

• Journal of the Optical Society of Korea
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• 제5권3호
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• pp.83-89
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• 2001

Room temperature quasi-continuous operation is achieved near 1556 nm with threshold current as low as 2.2 mA from a 5.6-${\mu}{\textrm}{m}$ oxide-aperture vertical-cavity surface-emitting laser. Wafer fusion techniques are employed to combine the GaAs/AlGaAs mirror and the InP-based InGaAs/InGaAsP active layer. In this structure, an $Al_x/O_y$/GaAs distributed bragg reflector and intra-cavity contacts are used to reduce free carrier absorption.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.152-153
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• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.395-398
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• 수산해양기술연구
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• 제14권2호
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• pp.113-116
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• 1978

우리나라 근해의 열 에너지 이용 가능성을 알기 위하여 황해 동부해역의 연직온도차 분포상황 및 그 계절적 변동을 조사하였고, 이들과 해수유동과의 관련성에 관하여 고찰하였다. 하계에는 거안 약 40mile 해역인 125${\circ}$30'E 이서의 34${\circ}$N이북에 연직온도차가 16$^{\circ}C$ 이상 되는 곳이 존재하는 바, 이것은 따뜻한 황해 난류계수의 표면가열과 저층의 황해냉수에 기인하는 것으로 생각된다. 연안으로 갈수록 연직 온도차는 줄어지고, 거안 약 30mile 해역에서는 약 1$0^{\circ}C$이다. 이를 이용하여 온도차발전이 가능하다고 보아진다. 제주도 남부 및 서부해역은 연직 온도차가 약 14$^{\circ}C$ 이상을 보인다. 겨울에는 왕성한 대류혼합으로 연직 온도차는 거의 없어진다. 그러나 겨울에는 강한 계절풍이 계속 발전체계를 여름에는 온도차발전, 겨울에는 파력 및 풍력발전을 하는 방식으로 체계화하면 주년 계속 발전이 가능할 것이라 생각된다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.56-59
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• 2002

Since the KSTAR magnet structure should be maintained at cryogenic temperature of about 4.5 K, even a small amount of heat might be a major cause of the temperature rising of the superconducting magnet structure. The Joule heating by eddy current induced on the magnet structure during the KSTAR operation was found to be a critical parameter for designing the cooling scheme of the magnet structure as well as defining the requirements of the refrigerator for the cryogenic system. Based on the Joule heating calculation, it was revealed that the bulk temperature rising of the magnet coil structure was less than 1 K. The local maximum temperature especially at the inboard leg of the TF coil structure increase as high as about 21 K for the plasma vertical disruption scenario. For the CS coil structure maximum temperature of 8.4 K was obtained from PF fast discharging scenario.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.