• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1630-1631
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• 2011

Lightning current distribution in a building directly hit was studied by using a scaled steel frame structure model. As the test current source, impulse current with the rise time of 10 ${\mu}s$ and sinusoidal current with the frequency of 30 kHz were used to confirm the validity of test results. The current distributions at both horizontal and vertical pillars were measured by using CT. From the test results, the reduction effect for the conductive EMI was verified and a design method reducing the conductive EMI was proposed.

• 한국컴퓨터산업학회논문지
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• 제9권3호
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• pp.115-120
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• 2008

코일에 전류가 서로 수평방향으로 흐를 때 힘이 발생한다. 그러나 코일에 수직으로 완전 교차하면 힘은 0이다. 반 코일 구조를 이용하여 완전수직 교차가 아닌 반만 수직으로 전류가 흐를 때는 힘이 존재함을 적분 방적식으로 풀이 할 수 있다. 수식 모델을 만들어 컴퓨터 씨뮬레이션 할 수 있도록 하고 특히 전기 피스톤에 응용 할 수 있도록 한다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.191-192
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• 2006

An orthogonal antenna is presented for reader applications of radio frequency identification (RFID) at 433 MHz. The antenna is composed of two $1{\times}2$ sub-arrays orthogonally placed on a ground plane. Two different feeding networks are introduced to control horizontal and vertical radiation current flows for each sub-array, respectively. An inverted-F structure is used as a radiation element with vertical and horizontal currents flowing on the radiator, thereby obtaining two linear polarizations. Antenna gains are 3.71 and 3.43 dBi and isolation between the two input ports is less than 25dB.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.59-63
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• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

• International Journal of Aeronautical and Space Sciences
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• 제3권2호
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• pp.67-75
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• 2002

In the course of missile system design, jet plume impingement is encountered in designing airframe as well as launchers, requiring careful investigation of its effect on the system. In the present paper, recent works on such topic are presented to demonstrate usefulness of CFD results in helping design the hardware. The jet impinging flow structure exhibits such complex nature as shock shell, plate shock and Mach disk depending on the flow parameters. The main parameters are the ratio of the jet pressure to the ambient pressure and the distance between the nozzle and the wall. In the current application, the nozzle contour and the pressure ratio are held fixed, but the jet impinging distance is varied to illuminate the characteristics of the jet plume with the distance. The same methodology is then applied to a complex vertical launcher system (VLS), capturing its flow structure and major design parameter. These applications involving jets are thus hoped to demonstrate the usefulness and value of CFD in designing a complex structure in the real engineering environment.

• 한국안전학회지
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• 제30권6호
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• pp.18-25
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• 2015

Computational study of a gravity current prior to the backdraft was conducted using fire dynamic simulator (FDS). Various initial conditions of mixture compositions and compartment temperature as well as four opening geometries (Horizontal, Door, Vertical, and Full opening) were considered to figure out their effects on the gravity current. The density difference ratio (${\beta}$) between inside and outside of compartment, the gravity current time ($t_{grav}$) and velocity ($v_{grav}$), and non-dimensional velocity ($v^*$) were introduced to quantify the flow characteristics of the gravity current. Overall fluid structure of the gravity current at the fixed opening geometry showed similar development process for different ${\beta}$ conditions. However, $t_{grav}$ for entering air to reach the opposed wall to the opening geometry increased with ${\beta}$. Door, Vertical, and Horizontal openings where openings are attached on the ground showed similar development process of the gravity current except for Horizontal opening, which located on the middle of the opening wall. The magnitude of $v_{grav}$ at fixed ${\beta}$ was, from largest to smallest, Full > Vertical > Door > Horizontal, but it depended on both the size and location of the opening. On the other hand, $v^*$ was found to be independent to ${\beta}$, and only depended on the geometry of the opening.

• 동력기계공학회지
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• 제15권1호
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• pp.64-71
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• 2011

The Tension Leg Platform(TLP) is restrained from oscillating vertically by tethers(or tendons), which are vertical anchor lines tensioned by the platform buoyancy larger than the platform weight. Thus a TLP is a compliant structure which allows lateral movements of surge, sway, and yaw but restrains heave, pitch, roll. In this paper, the motions of a TLP in current and waves were investigated. Hydrodynamic forces and wave exciting forces acting on the TLP were evaluated using the three dimensional source distribution method. The motion responses and tension variations of the TLP were analyzed in the case of including current or not including one in regular waves and effects of current on the TLP were investigated.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 춘계학술대회
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• pp.845-848
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• 2009

전력용반도체(Power Management IC)는 전력의 변환이나 제어용으로 최적화되어 있는 전력장치용 반도체 소자로서 전자기기에 들어오는 전력을 그 전자기기에 맞게 변경하는 역할을 하며, 일반 반도체에 비해서 고내압화, 큰 전류화, 고주파수화 되어 있다. 전력용반도체는 전기가 쓰이는 제품에는 다 들어가며, 자동차, 공업제품, 컴퓨터와 주변기기, 통신, 가전제품, 모바일 기술, 대체 에너지 등에 대한 수요 증가가 시장의 성장을 촉진한다. 전력용반도체 개발을 통해 대일무역적자 해소 기여, 취약한 비메모리 산업의 육성을 통한 반도체산업의 균형발전, 신성장동력 창출을 통한 미래 경제발전을 도모할 수 있다. 본 고에서는 반도체 부문의 미래 유망품목인 전력용반도체의 필요성 및 중요성, 시장현황 및 전망을 중심으로 살펴보고 결론에서 정책적 시사점을 도출하고자 한다.

• 국제초고층학회논문집
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• 제9권4호
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• pp.307-314
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• 2020

High-rise buildings with vertical setback are widely used in practice. From the field investigation of the past earthquakes, it was found that such kind of vertically irregular high-rise building structures easily suffer severe damage during strong earthquakes. This paper presents an extensive study on the earthquake responses of moment-resisting frame structures (MFS) popularly applied in high-rise buildings with vertical setback. Four groups of MFS are designed, including three groups of structures with vertical setback and one group of structures with the lateral stiffness varying along the building height but without vertical setback. The numerical models of the structures are established, and the time history analysis of the structures under different levels of earthquakes is conducted. The earthquake responses of the structures are compared. The influence of the ratio between the horizontal setback dimension and the previous plan dimension, the eccentricity of setback, and the position where the setback occurs on the seismic performance of structures is studied. The rationality of the provisions for the structures with vertical setback specified in the current design codes is checked by the findings from this study.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.731-736
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• 2014

An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.