• 건축역사연구
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• 제28권1호
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• pp.7-16
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• 2019

As a part of the research on existing structures of private homes from Joseon Era. Focusing on one hundred twenty five-purlin houses, the current study investigated the features and characteristics of the house structure from style, size, proportion and roof pitch, and measurements of key parts, and developed the following conclusions. Most are single-houses (89, 83%), and among them, there are 47 single front-terrace houses (39%), which is the highest number. The sizes of lower house structure do not differ greatly depending on the vertical structure, and single rear terrace house and double-house have relatively larger side sizes. The size of upper structure is larger in double-houses compared to other vertical structures, indicating a relatively higher roof. The cross-section measurement of major parts show that double-houses are larger than single-houses by 3cm in pillar, 3-4.5cm in crossbeam length, and 4.5cm in crossbeam width. However, Janghyeo width was consistent at 7.5 to 10.5cm, maintaining uniformity regardless of vertical structure of the houses. In addition, the cross-section measurements decreased from sixteenth to nineteenth century, with the size of pillar size decreasing the most. The result that the Janghyeo width is not related to the house structure house confirmed that the Janghyeo width was kept consistent regardless of the size of the house structure.

• 전기학회논문지
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• 제58권8호
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• pp.1580-1584
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• 2009

We have theoretically analyzed the monolithic integration of vertical cavity lasers with depleted optical thyristor (VCL-DOT) structure and experimentally demonstrated optical logic gates such as AND-gate, OR-gate, and INVERTER implemented by VCL-DOT for an optical programmable gate array. The optical AND and OR gates have been realized by changing a input bias of the single VCL-DOTs and all kinds of optical logic functions are also implemented by adjusting an intensity of the reference input beams into the differential VCL-DOTs. To achieve the high sensitivity, high slope efficiency and low threshold current, a small active region of lasing part and a wide detecting area are simultaneously designed by using a selective oxidation process. The fabricated devices clearly show nonlinear s-shaped current-voltage characteristics and lasing characteristics of a low threshold current with 0.65 mA and output spectrum at 854 nm.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.71-76
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• 2015

최근 Light Emitting Diode (LED)의 효율을 높이기 위한 연구가 활발히 진행 되고 있다. 특히 소자 측면에서는 수평형 LED, 수직형 LED, via-hole 구조의 수직형 LED 등의 다양한 구조가 제시되었다. 본 논문에서는 시뮬레이션을 통해 via-hole 구조의 수직형 LED의 새로운 전극 디자인을 제시하였다. 기존 Via-hole 구조의 수직형 LED의 n-contact hole 주변에 전류가 밀집되는 문제점을 해결하면서 유효 발광면적을 극대화 시켜 소자 전체에 균일한 전류를 주입할 수 있는 소자 디자인에 대해 평가하였다. 시뮬레이션 결과를 바탕으로 최적의 전극 디자인을 실제 디바이스로 제작하여 기존의 via-hole 구조의 수직형 LED와 비교 분석하였다. 최적화된 디자인이 적용된 via hole type 수직형 LED의 경우 기존 디자인에 비해 350 mA 주입시 약 0.2 V의 Forward Voltage 감소하였지만 광 출력은 비슷하여 최종적으로 4.2%의 WPE (Wall plug efficiency)가 향상됨을 보였다.

• Current Optics and Photonics
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• 제3권4호
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• pp.292-297
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• 2019

We propose a ring resonator-based orbital angular momentum carrying vortex beam generator design with high vertical directional emission efficiency. By adopting a vertically asymmetric grating structure in the ring resonator, optimized for enhanced vertical emission, an emission efficiency in one direction reaches as high as 78%, exceeding the 50% theoretical limit of previously designed vertically symmetric grating-assisted ring resonator-based structures.

• Structural Engineering and Mechanics
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• 제67권5호
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• pp.481-492
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• 2018

The current experimental study is the reinforcement of the simple curvature vault masonry structures. In this study, we discuss complex structure include vault and rib cover with two radii and actual dimensions under a vertical load. The unreinforced structure data were compared with analysis data. The analysis data are in good agreement with experimental data. In the first experiment, a structure without reinforcement is tested and according to the test results, the second structure was reinforced using the carbon polymer fibers and the same test is done to see the effects of reinforcement. Based on the test results of the first structure, the first cracks are created in the vault. Moreover, the reinforcement with carbon fibers will increase the loading capacity of the structure around 35%.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.247-248
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• 2006

In this study, the morphology of the change of primary Al phase in A356 alloy by two kinds of electromagnetic stirrers(vertical and horizontal) were investigated to obtain the globular structure. The effects of the stirring current, the stirring time and the pouring temperature were determined. The greater stirring current and longer stirring time were to get the finer the Al phase. However, over a certain stirring current and stirring time, the primary Al was merged together and was increased. The reason is the degree of breakdown of initial dendrites has been decreased by the collision and coalescence of particles with increasing stirring current and stirring time. The optimum conditions and difference of the two kinds of electromagnetic stirrers have been investigated for rheology forming with controlled solid fraction.

• Earthquakes and Structures
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• 제7권6호
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• pp.1141-1169
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• 2014

This study is aimed to investigate the seismic performance of low-rise precast wall system with base isolation. Three types of High Damping Rubber Bearing (HDRB) were designed to provide effective isolation period of 2.5 s for three different kinds of structure in terms of vertical loading. The real size HDRB was manufactured and tested to obtain the characteristic stiffness as well as damping ratio. In the vertical stiffness test, it was revealed that the HDRB was not an ideal selection to be used in isolating lightweight structure. Time history analysis using 33 real earthquake records classified with respective peak ground acceleration-to-velocity (a/v) ratio was performed for the remaining two types of HDRB with relatively higher vertical loading. HDRB was observed to show significant reduction in terms of base shear and floor acceleration demand in ground excitations having a/v ratio above $0.5g/ms^{-1}$, very much lower than the current classification of $0.8g/ms^{-1}$. In addition, this study also revealed that increasing the damping ratio of base isolation system did not guarantee better seismic performance particularly in isolation of lightweight structure or when the ground excitation was having lower a/v ratio.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권8호
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• pp.371-377
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• 2005

This paper Presents the Potential gradient characteristics of structure grounding electrode when a test current flows through grounding electrode. In order to analyze the potential gradient of ground surface on structure grounding electrode, the reduced scale model has been used. The potential gradient has been measured and analyzed for types of structure using the hemispherical grounding simulation system in real time. The structures were designed through reducing real buildings and fabricated with four types on a scale of one-one hundred sixty. The supporter was made to put up with weight of structure and could move into vertical, horizontal, rotary direction. When a test current flowed through structure grounding electrodes, ground potential rise was the lowest value at electric cage type(type B). According to resistivity and absorption percentage In concrete attached to structure, the potential distribution of ground surface appeared differently.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1131-1137
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• 2015

Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.