• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1630-1631
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• 2011

Lightning current distribution in a building directly hit was studied by using a scaled steel frame structure model. As the test current source, impulse current with the rise time of 10 ${\mu}s$ and sinusoidal current with the frequency of 30 kHz were used to confirm the validity of test results. The current distributions at both horizontal and vertical pillars were measured by using CT. From the test results, the reduction effect for the conductive EMI was verified and a design method reducing the conductive EMI was proposed.

• Journal of the Korea Computer Industry Society
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• v.9 no.3
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• pp.115-120
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• 2008

When the electric current flows horizontally along the coil, the force is found. However, when the coil intersects perpendicularly, the force is 0. Using a half coil structure, when electric current flows along the incomplete perpendicular half intersect we can explain this by way of integral calculus with the spinning motion. Upon completion of the perpendicular model, computer simulation for this model will be possible particularly for the application of the electric piston.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.191-192
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• 2006

An orthogonal antenna is presented for reader applications of radio frequency identification (RFID) at 433 MHz. The antenna is composed of two $1{\times}2$ sub-arrays orthogonally placed on a ground plane. Two different feeding networks are introduced to control horizontal and vertical radiation current flows for each sub-array, respectively. An inverted-F structure is used as a radiation element with vertical and horizontal currents flowing on the radiator, thereby obtaining two linear polarizations. Antenna gains are 3.71 and 3.43 dBi and isolation between the two input ports is less than 25dB.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.59-63
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• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

• International Journal of Aeronautical and Space Sciences
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• v.3 no.2
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• pp.67-75
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• 2002

In the course of missile system design, jet plume impingement is encountered in designing airframe as well as launchers, requiring careful investigation of its effect on the system. In the present paper, recent works on such topic are presented to demonstrate usefulness of CFD results in helping design the hardware. The jet impinging flow structure exhibits such complex nature as shock shell, plate shock and Mach disk depending on the flow parameters. The main parameters are the ratio of the jet pressure to the ambient pressure and the distance between the nozzle and the wall. In the current application, the nozzle contour and the pressure ratio are held fixed, but the jet impinging distance is varied to illuminate the characteristics of the jet plume with the distance. The same methodology is then applied to a complex vertical launcher system (VLS), capturing its flow structure and major design parameter. These applications involving jets are thus hoped to demonstrate the usefulness and value of CFD in designing a complex structure in the real engineering environment.

• Journal of the Korean Society of Safety
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• v.30 no.6
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• pp.18-25
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• 2015

Computational study of a gravity current prior to the backdraft was conducted using fire dynamic simulator (FDS). Various initial conditions of mixture compositions and compartment temperature as well as four opening geometries (Horizontal, Door, Vertical, and Full opening) were considered to figure out their effects on the gravity current. The density difference ratio (${\beta}$) between inside and outside of compartment, the gravity current time ($t_{grav}$) and velocity ($v_{grav}$), and non-dimensional velocity ($v^*$) were introduced to quantify the flow characteristics of the gravity current. Overall fluid structure of the gravity current at the fixed opening geometry showed similar development process for different ${\beta}$ conditions. However, $t_{grav}$ for entering air to reach the opposed wall to the opening geometry increased with ${\beta}$. Door, Vertical, and Horizontal openings where openings are attached on the ground showed similar development process of the gravity current except for Horizontal opening, which located on the middle of the opening wall. The magnitude of $v_{grav}$ at fixed ${\beta}$ was, from largest to smallest, Full > Vertical > Door > Horizontal, but it depended on both the size and location of the opening. On the other hand, $v^*$ was found to be independent to ${\beta}$, and only depended on the geometry of the opening.

• Journal of Power System Engineering
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• v.15 no.1
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• pp.64-71
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• 2011

The Tension Leg Platform(TLP) is restrained from oscillating vertically by tethers(or tendons), which are vertical anchor lines tensioned by the platform buoyancy larger than the platform weight. Thus a TLP is a compliant structure which allows lateral movements of surge, sway, and yaw but restrains heave, pitch, roll. In this paper, the motions of a TLP in current and waves were investigated. Hydrodynamic forces and wave exciting forces acting on the TLP were evaluated using the three dimensional source distribution method. The motion responses and tension variations of the TLP were analyzed in the case of including current or not including one in regular waves and effects of current on the TLP were investigated.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.

• International Journal of High-Rise Buildings
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• v.9 no.4
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• pp.307-314
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• 2020

High-rise buildings with vertical setback are widely used in practice. From the field investigation of the past earthquakes, it was found that such kind of vertically irregular high-rise building structures easily suffer severe damage during strong earthquakes. This paper presents an extensive study on the earthquake responses of moment-resisting frame structures (MFS) popularly applied in high-rise buildings with vertical setback. Four groups of MFS are designed, including three groups of structures with vertical setback and one group of structures with the lateral stiffness varying along the building height but without vertical setback. The numerical models of the structures are established, and the time history analysis of the structures under different levels of earthquakes is conducted. The earthquake responses of the structures are compared. The influence of the ratio between the horizontal setback dimension and the previous plan dimension, the eccentricity of setback, and the position where the setback occurs on the seismic performance of structures is studied. The rationality of the provisions for the structures with vertical setback specified in the current design codes is checked by the findings from this study.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.731-736
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• 2014

An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.