• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.203-210
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• 2004

Effects of various pretreatments on the adhesion of copper-coated polymer films were investigated. Copper-coated polymer films were prepared by an electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a DC bias system at room temperature. PET(polyethylene terephthalate) film was employed as a substrate material and it was pretreated by industrially feasible methods such as chromic acid, sand-blasting, oxygen plasma and ion-implantation treatment. Surface characterization of the copper-coated polymer film was carried out by AFM(Atomic Force Microscopy) and FESEM(Field Emission Scanning Electron Microscopy). Surface energy was calculated by based on the value of the contact angle measured. The adhesion of copper/PET films was determined by a pull-off test according to ASTM D-5179. It was found that suitable pretreatment of the PET substrate was required for obtaining good adhesion property between copper films and the substrate. In this study the highest adhesion was observed in sand-blasting, and then followed by those of acid and oxygen plasma treatment. However, the effect of surface energy was insignificant in our experimental range. This is probably due to compensating the difference in surface energy from various pretreatments by exposing substrate to ECR plasma for 5 min or longer at the early stage of the copper deposition. Therefore, it can be concluded that surface roughness of the polymer substrate plays an important role to determine the adhesion of copper-coated polymer for the deposition of copper by ECR-MOCVD.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.21-26
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• 2013

This study presents new analysis method to predict bending behavior of packaging substrate structure by comparing finite element method simulation and measured curvature using 3D scanner. Packaging substrate is easily bent and deflected while undergoing various processes such as curing of prepreg and copper pattern plating. We prepare specimens with various conditions and measure contours of each specimen and compute the residual stresses on deposited films using analytical solution to find the principle of bending. Core and prepreg in packaging substrate are made up of resin and bundles of fiber which exist orthogonally each other. Anisotropic material properties cause peculiar bending behavior of packaging substrate. We simulate the bending deflection with finite element method and verify the simulated deflection with measured data. The plating stress of electrodeposited copper is about 58 MPa. The curing stresses of solder resist and prepreg are about 13 MPa and 6.4 MPa respectively in room temperature.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.375-379
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• 2008

This paper reports a new fabrication method of polydimethylsiloxane (PDMS) microlenses with various curvatures by using a water-based mold. The hydrophobic surface of Polypropylene (PP) substrate was modified by corona discharge using tesla coil to have hydrophilic surface. Then hydrophilic surface of PP substrate takes hydrophobic recovery to have various contact angles from less than $25^{\circ}$ to about $84^{\circ}$. By using the water droplets with various contact angles as replica molds for PDMS process, we could obtain PDMS microlenses with various curvatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.340-341
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• 2007

Thin film of ZnO was deposited on various substrate by Nd:YAG Pulsed Laser Deposition(PLD) with a wavelength of 355nm. Further more, Thin filme of ZnO conducted by various temperature conditions. The surface morphology of the ZnO thin film was investigated by X-Ray Diffraction(XRD) and Atomic Force Microscopy(AFM). Effects of various substrates and Temperature conditions were analyzed. The best properties were obtained on $600^{\circ}C$ with post-deposition annealing at $600^{\circ}C$ in flowing $O_2$ atmosphere for several hours.

• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.461-467
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• 2019

Ink-jet printing technology, which utilizes a digitalized design to print fine ink directly on a substrate, has been of interest in various industries due to its high efficiency and adaptability to various materials. Recently, active attempts have been made to apply ceramic materials having excellent heat resistance, light resistance, and chemical resistance to the ink-jet printing process. In this study, ceramic ink was synthesized by combining ceramic pigments with UV curable polymer. 3D printability at various contact angles between ceramic ink and substrate was analyzed in detail. Rheological properties of the synthesized ceramic ink were optimized to meet the requirements of the ink-jet printing process, and the contact angle of UV curable ceramic ink was controlled through surface treatment of the substrate. The potential for additive manufacturing of ceramic material using ink-jet printing was investigated by analyzing the effect of contact angle control on ceramic ink droplets and their 3D printability.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.50-58
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• 2002

The growth of GaN films on Si substrate has many advantages in that Si is less expensive than sapphire substrate and that integration of GaN-based devices with Si substrate is easier The difference of lattice constant and thermal expansion coefficient between GaN and Si is larger than those between GaN and sapphire. However, which results in many defects into the grown GaN. In order to obtain high duality GaN films on Si substrate, we need to reduce defects using the buffer layer such as AlN. In this study, we prepared three types of AlN buffer layer with various crystallinity on Si (111) substrate using MOCVD, Sputtering and MOMBE methods. GaN was grown by MOCVD on three types of AlN/Si substrate. Using TEM and XRD, we carried out comparative investigation of growth and properties of GaN deposited on the various AlN buffers by characterizing lattice coherency, crystallinity, growth orientation and defects formed (voids, stacking faults, dislocations, etc). It is found that the crystallinity of AlN buffer layer has strong effects on growth of GaN. The AlN buffer layers grown by MOCVD and MOMBE showed the reduction of out-of-plane misorientation of GaN at the initial growth stage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.202-205
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• 2002

Polycrystalline silicon thin film transistors (poly-Si TFTs) are used in a wide variety of applications, and will figure prominently future high-resolution, high-performance flat panel display technology However, it was very difficult to fabricate high performance poly-Si TFTs at a temperature lower than 300$^{\circ}C$ for glass substrate. Conventional process on a glass substrate were limited temperature less than 600$^{\circ}C$ This paper proposes a high temperature process above 750$^{\circ}C$ using a flexible molybdenum substrate deposited hydrogenated amorphous silicon (a-Si:H) and than crystallized a rapid thermal processor (RTP) at the various temperatures from 750$^{\circ}C$ to 1050$^{\circ}C$. The high temperature annealed poly-Si film illustrated field effect mobility higher than 30 $\textrm{cm}^2$/Vs, achieved I$\sub$on//I$\sub$off/ current ratio of 10$^4$ and crystall volume fraction of 92%. In this paper, we introduce the new TFTs Process as flexible substrate very promising roll-to-roll process, and exhibit the properties of high temperature crystallized poly-Si Tn on molybdenum substrate.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.104-105
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• 2007

In this study, characteristics of silver ink-jet printing were investigated under various substrate treatments such as substrate heating, hydrophobic coating, and ultraviolet(UV)/ozone soaking. Fluorocarbon(FC) film was spin-coated on the polyimide (PI) film substrate to obtain a hydrophobic surface. Although hydrophobicity of the FC film could reduce the diameter of the printed droplets, the singlet images printed on the FC film surface showed irregularities in the pattern size and the position of the printed droplet along with droplet merging phenomenon. The proposed UV/ozone soaking of the FC film improved the uniformity of the pattern size and the droplet position after printing and substrate heating was very effective way in preventing droplet merging. By heating of the substrate after UV/ozone soaking of the coated FC film, silver conductive lines of 78-116 ${\mu}m$ line were successfully printed at low substrate temperatures of $40^{\circ}C$.