• 한국전기전자재료학회논문지
• /
• 제22권9호
• /
• pp.772-775
• /
• 2009

Indium tin oxide(ITO) thin film was deposited at room temperature on polycarbonate(PC) substrate by in-line sputter system. ITO sputtering process was carried out at a various pressure for the reduction of ion damage on PC substrate and the electrical and the optical properties of deposited ITO films were obtained and analyzed. From the experimental results, the sheet resistances of as-deposited ITO films varied with a different pressure and the optical transmittances at visible wavelength were maintained above 85%. The results are considered to be related to the pressure of oxygen atoms as a reaction gas.

• 한국표면공학회지
• /
• 제29권5호
• /
• pp.338-344
• /
• 1996

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

• Journal of information and communication convergence engineering
• /
• 제1권2호
• /
• pp.67-69
• /
• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.83-83
• /
• 2010

We report a new direct printing method, called liquid-mediated nanotransfer molding (LB-nTM), that uses a polar liquid-mediated transfer process. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid- bridge between the stamp and the substrate. This procedure can be adopted in automated printing machines that generate various material patterns with a wide range of feature sizes (as small as 60 nm) on diverse substrates. To demonstrate its usefulness, the LB-nTM method was applied to prepare ZnO-nanowire and TIPS-pentacene transistors.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.85-85
• /
• 2010

We report a new direct printing method, called liquid-mediated nanotransfer molding (LB-nTM), that uses a polar liquid-mediated transfer process. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid- bridge between the stamp and the substrate. This procedure can be adopted in automated printing machines that generate various material patterns with a wide range of feature sizes (as small as 60 nm) on diverse substrates. The patterns have been investigated by scanning electron microscopy(SEM).

• 한국생물물리학회:학술대회논문집
• /
• 한국생물물리학회 1997년도 학술발표회
• /
• pp.37-37
• /
• 1997

The catalytic efficiency of pyranose oxidase (EC 1.1.3.10.) determined for various sugars showed that D-glucose is the preferred substrate and the enzyme oxidized the various aldonolactones. The specificity constants of pyranose oxidase determined for deoxy- and deoxyfluoro-D-glucoses showed that a hydroxy group at C-4 of D-glucose acts as a hydrogen-bone acceptor, at C-6 as a hydrogen-bond donor, and at C-1 as a hydrogen-bond donor.(omitted)

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.58.2-58.2
• /
• 2010

This paper deals with the simulation of solid particle coating technology via supersonic nozzle in vacuum environment to devote as an aerosol-deposition device. In order to improve efficiencies of nozzle and coating process, effects of shockwave, nozzle geometry, and substrate location were studied computationally under a fixed chamber pressure of 0.01316 bar which is nearly vacuous. Shockwave is the important factor affect to entire flow because shockwave in the jet flow dissipates the kinetic energy of the flow in the supersonic condition. Results show that various nozzle geometries have significant effect on the supersonic flow and we know that the supersonic nozzle should be optimized to minimize the loss of the flow. Another parameter, the distance between substrate and nozzle tip, shows little effect in this study.

• 한국전기전자재료학회논문지
• /
• 제14권6호
• /
• pp.481-486
• /
• 2001

ZnO thin films on glass substrate were depostied by RF magnetron reactive sputter with various argon/oxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keithley 617). All films showed a strong preferred orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/O$_2$.=50/50. The propagation velocity of ZnO SAW filter was about 2,590 m/sec and insertion loss was a minimum value of abut -21dB.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 추계종합학술대회 논문집
• /
• pp.645-648
• /
• 1998

We used a three-dimensional inductance extraction program, Fasthenry for optimal design of the spiral inductors on silicon substrate. The inductance and quality factor of the spiral inductors with various design parameters were calculated so that the optimal parameter value was determined. The spiral inductors then were fabricated using different foundary processes and were measured using the network analyzer and microwave probes. The pad and other parasitics of measurement system were de-embedded using the y-parameter calibration technique. the inductors fabricated using the LG 0.8um process and HP 0.5um process showed the quality factor of 5.8 and 3, respectively. Finally the equivalent circuit farameters of the spiral inductors on silicon substrate were extracted from the measurement data using the matlab.

• 한국세라믹학회지
• /
• 제31권8호
• /
• pp.886-892
• /
• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.