• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.2
• /
• pp.64-70
• /
• 2009

A 6-Gbps feed-forward equalizer having a 6.2-dB gain at 3GHz is designed in 0.13-um CMOS technology and the equalizer helps error-free data recovery over a 7-m SATA cable with 14.7dB loss. Based on a differentially-connected varactor, the proposed equalizer uses only a one-fourth varactor size of a conventional equalizer, which enables the equalizer's integration in a pad-frame, high operating frequency, and low power dissipation of 3.6mW.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.387-388
• /
• 2008

In this paper, we have designed and fabricated hyperabrupt varactor diodes. Capacitance variations of hyperabrupt-doped varactor diodes are larger than those of uniform-doped varactor diodes. The measured reverse breakdown voltage of the fabricated varactor diodes was about 20 V. For the anode contact diameter of $50\;{\mu}m$, the maximum capacitance of the fabricated varactor diode was 2.1 pF and the minimum capacitance 0.44 pF. Therefore, the $C_{max}/C_{min}$ ratio was 4.77. Also, for the anode contact diameter of $60\;{\mu}m$, the maximum and minimum capacitances were 2.9 and 0.62 pF, respectively. And, thus, the $C_{max}/C_{min}$ ratio was 4.64.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.15 no.5
• /
• pp.39-45
• /
• 1978

This paper described on the varactor tuning Gunn oscillator for X band. Analyzed the coplanar 2 post case using the dyadic Green's function then derived the obstacle network for the incident TE10 mode. For the electronical tuning, used the tuning varactor diode which has a high speed dynamic response characteristic and high Q. Oscillation frequency, switching mode, and stable oscillation point were calculated by the computer simulation. In the expriments, switching mode was occurred at 18 mm, 32.5 mm of the short tcircuit position, respectively. The general characteristics of the varactor tuning Gunn oscillator were abruptly changed by the moving of the short circuit and the variation of the bias voltage.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2001.11a
• /
• pp.344-344
• /
• 2001

• Journal of Electrical Engineering and Technology
• /
• v.10 no.4
• /
• pp.1720-1725
• /
• 2015

The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO₂, Gd₂O₃, and Si₃N₄ films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si₃N₄ dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.7
• /
• pp.729-736
• /
• 2011

In this paper, we propose a varactor-diodeless voltage-controlled oscillator operating at X-band, and verify the possibility of applying to a receiver for microwave radar signal detection applications. The proposed VCO is realized by only single RF BJT device as a varactor diode is substitued by a intrinsic collector-base PN-junction of the active device which is used to generate negative resistance. The fabricated VCO meets the specification of the receiver, which has a 11.20~11.75 GHz tuning bandwidth with respect to the tuning voltage, 1.0~7.0 V, output power of 9.0~12.0 dBm and linear frequency tuning performance.

• Journal of electromagnetic engineering and science
• /
• v.16 no.3
• /
• pp.159-163
• /
• 2016

In this paper, a frequency tunable double band-stop resonator (BSR) with voltage control by varactor diodes is suggested. It makes use of a half-wavelength shunt stub as its conventional basic structure, which is replaced by the distributed LC block. Taking advantage of the nonlinear relationship between the frequency and electrical length of the distributed LC block, a dual-band device can be designed easily. With two varactor diodes, the stop-band of the resonator can be easily tuned by controlling the electrical length of the resonator structure. The measurement results show the tuning ranges of the two operating frequencies to be 1.82 GHz to 2.03 GHz and 2.81 GHz to 3.03 GHz, respectively. The entire size of the resonator is $10mm{\times}11mm$, which is very compact.

• Journal of electromagnetic engineering and science
• /
• v.5 no.2
• /
• pp.80-86
• /
• 2005

In this paper, a novel varactor-tuned combline bandpass filter is presented. The coupling varactor diode between line elements is introduced to control the passband bandwidth so that the passband bandwidth can be maintained almost constant within the tuning range. The equivalent circuit and design equations are derived, and the optimum design is discussed. A 1.7 GHz, two-pole bandpass filter with a bandwidth of $4.5\%$ was constructed. The absolute passband bandwidth was maintained almost constant within more than 0.4 octave tuning range.

• Proceedings of the KIEE Conference
• /
• 2008.05a
• /
• pp.151-152
• /
• 2008

In this paper, a dual band LNA (Low Noise Amplifier) with a matching circuit using varactor diode is designed for 912MHz and 2450MHz RFID system. The operating frequency is controlled by the bias voltage applied to the varactor diode. The measured results demonstrate that gain is 13.6dB and 6.8dB at 912MHz and 2450MHz. The measured NF (Noise Figure) is 1.4dB and 3.1dB at 912MHz and 2450MHz, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.20 no.9
• /
• pp.40-44
• /
• 2006

This study investigated a new tuneable bandpass filter based on coplanar waveguide coupled line structure, and using the varactor diode for tuning the center frequency of the filter. The filter was designed by a commercial simulator and had a tuning range of 180[MHz] from 0.95[GHz] to 1.13[GHz]. The filter acceptable values regarding the insertion loss was less than 3[dB] and its return loss greater than 12[dB]. The figure of merit of the implemented tuneable filter increased with the reverse bias voltage up to 14[V] on the varactor diode. The proposed filter has a promising future as it can be used in integration processes and in various materials as substrate.