• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.234.2-234.2
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• 2014

Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the $Al_2O_3$ thin film was deposited by spatial ALD process. We characterized various process variables in the spatial ALD such as temperature, scanning speed, and chemical compositions. Water vapor transmission rate (WVTR) was determined by calcium resistance test and less than $10-^3g/m^2{\cdot}day$ was achieved. The samples were analyzed by x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FE-SEM).

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.105-107
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• 2002

a-C:H films were coated on windows of mobile telephone by RF plasma chemical vapor deposition equipment made in our company. Thickness of the coatings is about 0.7 micrometers and they have high hardness, low friction coefficient, good adhesion, high optical transparency and chemical inertness. Knoop hardness of the diamond-like carbon films on glass substrate is 2328 kg/mm$^2$. The adherence between films and substrate is good and shows to be 69 N by scratching test. The optical performance is improved obviously owing to coat the film on it. The index of the coated windows is 2.5, transmission of visible light is larger than 90%, and transmission of ultraviolet light decreases by 30% and the ultraviolet light can be obstructed obviously. The coated glass also has self-clean effect and decontamination ability. The films have hydrophobic character and the soakage angle of water drop is larger than 90 degrees. The windows have fog-proof ability owing to eliminate the capillary phenomena in the inner surface. The physics and chemical properties of the coated windows are steady. Study indicates that the performance of a-C:H coated mobile phone windows are improved notably on wear-resistance, corrosion-proof and optical properties and it is excellent mobile windows protective coatings.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1779-1783
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• 2006

The hybrid thin-film (HTF) passivation layer composed of the UV curable acrylate layer and MS-31 (MgO:SiO2=3:1wt%) layer was adopted in organic light emitting diode (OLED) to protect organic light emitting materials from penetrations of oxygen and water vapors. The moisture resistance of the deposited HTF layer was measured by the water vapor transmission rate (WVTR). The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007g/m^2$ per day at $37.8^{\circ}C$ and 100% RH. Therefore, the HTF on the OLED was found to be very effective in protect what from the penetrations of oxygen and moisture.

• 한국표면공학회지
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• 제18권3호
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• pp.116-124
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• 1985

Chemical vapor deposition of $SnO_2$ on Pyrex glass substrate has been investigated using $SnCl_4$ and Oxygen at relatively low temperatures(300-500$^{\circ}C$). The critical flow rate, which delineated the surface reaction controlled region from the mass transfer controlled region, was increased with deposition temperature. The apparent activation energy obtained in surface reaction controlled region was about 6Kcal/mole. The results show that deposition rate, electrical conductivity and transmittance were affected mainly by partial pressure of $SnCl_4$, but little by partial pressure f oxygen. The % transmission of 5000A-thick $SnO_2$ film was about 90% in visible spectrum region and sheet resistance was varied in 0.1-10${\Omega}$ per square shaped portion of the outer surface of the oxide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.188-188
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• 2012

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. In this study, we report a creative strategy, irradiation of microwave at room temperature under vacuum, for obtaining size-homogeneous gold nano-particle doping on graphene. The gold nano-particlization promoted by microwave irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping. These results clearly revealed that gold nanoparticle with ${\geq}30$ nm in mean size were decorated along the surface of the graphene after microwave irradiation. The fabrication high-performance transparent conducting film with optimized doping condition showed a sheet resistance of ${\geq}100{\Omega}$/sq. at ~90% transmittance. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.388-388
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• 2011

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. The physical properties of graphene depend directly on the thickness. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ~60 ${\Omega}/sq$ and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition,for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10~15 nm in mean size were decorated along the surface of the graphene after 1.0 MeV-e-beam irradiation. The fabrication high-performance TCF with optimized doping condition showed a sheet resistance of ~150 ${\Omega}/sq$ at 94% transmittance. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• 한국결정성장학회지
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• 제34권2호
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• pp.41-47
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• 2024

본 연구에서는 SiC(Silicon Carbide) 분말의 순도와 결정 성장 후 냉각 속도를 제어하여 PVT(Physical Vapor Transport) 방법으로 성장한 4인치 HPSI(High-Purity Semi-Insulating)-SiC 단결정의 저항 특성을 조사하였다. 순도가 다른 2개의 β-SiC 분말을 사용하였고, 성장 후 냉각 속도를 조절하여 다양한 저항값을 얻었다. 성장된 결정의 투과/흡수 스펙트럼 및 결정 품질은 각각 UV/VIs/NIR 분석과 XRD Rocking curve 분석을 이용하였으며, 비접촉 비저항 분석을 통해 전기적 특성을 조사하여 비저항 특성에 우세한 영향을 미치는 주요 요인을 확인하였다.

• 공업화학
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• 제23권2호
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• pp.217-221
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• 2012

에틸렌-아크릴산 공중합체(EAA)를 물에 분산시킨 후, 폴리(비닐 알코올) (PVA) 수용액과 블렌딩하여 내수성 및 차단성이 향상된 필름을 제조하였다. EAA의 함량에 따라 제조된 필름으로 열적-기계적 성질, 접촉각, 수분 투과율, 산소 투과율을 측정하였고 내수성에 대한 평가 실험도 진행하였다. 필름의 인장강도는 $9.16{\sim}11.75\;kg/mm^2$으로 PVA와 큰 차이가 없었으며, 경도의 경우는 EAA 함량에 따라 값이 점점 증가하였다. 유리전이 온도와 용융 온도는 약간 향상되었다. PVA/EAA의 비율이 90/10인 블렌딩 필름의 경우 Swelling 109%, Solubility 0%로 측정되어 PVA에 비하여 내수성이 개선되었음을 확인할 수 있었다. 또한, PVA/EAA의 비율이 90/10인 블렌딩 필름(두께 $2.5\;{\mu}m$)을 PET 필름(두께 $50\;{\mu}m$) 위에 코팅하여 제조된 필름의 수분투과율과 산소 투과율은 각각 $9.1\;g/m^2/day$과 $2.0\;cc/m^2/day$으로 측정되었다.

• 대한금속재료학회지
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• 제49권4호
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Nuclear Engineering and Technology
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• 제52권9호
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• pp.2054-2063
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• 2020

The high-temperature oxidation behavior of ZrSi₂ used as a coating material for nuclear fuel cladding was investigated for developing accident-tolerant fuel cladding of light water reactors. Bulk ZrSi₂ samples were prepared by spark plasma sintering. In situ X-ray diffraction was conducted in air at 900, 1000, and 1100 ℃ for 20 h. The microstructures of the samples before and after oxidation were examined by scanning electron microscopy and transmission electron microscopy. The results showed that the oxide layer of zirconium silicide exhibited a layer-by-layer structure of crystalline ZrO₂ and amorphous SiO₂, and the high-temperature oxidation resistance was superior to that of Zircaloy-4 owing to the SiO₂ layer formed. ZrSi₂ was coated on the Zircaloy-4 tube surface using laser 3D printing, and the coated tube was oxidized for 2000 s at 1200 ℃ under a vapor/argon mixture atmosphere. The outer surface of the coated tube was hardly oxidized (10-30 ㎛), while the inner surface of the uncoated tube was significantly oxidized to approximately 300 ㎛.