• 한국표면공학회지
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• 제35권4호
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• pp.211-217
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• 2002

Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

• 한국세라믹학회지
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• 제41권9호
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• pp.637-641
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• 2004

We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

• 한국세라믹학회지
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• 제50권6호
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• pp.533-538
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• 2013

Silicon carbide (SiC) materials are typical ceramic materials with a wide range of uses due to their high hardness and strength and oxidation resistance. In particular, due to the corrosion resistance of the material against acids and bases including the chemical resistance against ionic gases such as plasma, the application of SiC has been expanded to extreme environments. In the SiC deposition process, where chemical vapor deposition (CVD) technology is used, the reactions between the raw gases containing Si and C sources occur from gas phase to solid phases; thus, the merit of the CVD technology is that it can provide high purity SiC in relatively low temperatures in comparison with other fabrication methods. However, the product yield rarely reaches 50% due to the difficulty in performing uniform and dense deposition. In this study, using a computational fluid dynamics (CFD) simulation, the gas velocity inside the reactor and the concentration change in the gas phase during the SiC CVD manufacturing process are calculated with respect to the gas velocity and rotational speed of the stage where the deposition articles are located.

• 한국재료학회지
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• 제8권4호
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• pp.345-353
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• 1998

음이온 리간드로 hfac이 배위된 세 가지 종류의 구리(l) 전구체들의 열적 안정성, 기상분해 특성, 증착 특성 등을 연구하였다. $^{1}$H-NMR결과로부터 (hfac) Cu(VTMS) (hfac=hexafluoroacetylacetonate, VTMS=vinyltrimethylsilane)와 (hfac)Cu(VTMS) (VTMOS=vinyltrimethoxysilane)는 열적으로 안정한 화합물이라는 것을 확인할 수 있었으며, (hfac)Cu(ATMS)(STMS=allyltrimethylsilane)는 다른 전구체에 비해 열적으로 불안정한 화합물이라는 것을 확인할 수 있었다. In-situ FT-IR을 이용하여 기상 분해 특성을 연구한 결과 (hfac)Cu(VTMS)의 경우 $150^{\circ}C$부근에서 $Cu(hfac)_{2}$, $240^{\circ}C$부근에서 free한 상태의 hfac의 생성을 확인할 수 있었으며, 이러한 특성이 박막의 증착 속도와 물성에 미치는 영향을 확인하였다. 그리고 이들 전구체들의 증착 특성을 연구하였으며 (hfac)Cu(ATMS)의 경우 아르곤 운반 기체하에서 기판 온도가 $60^{\circ}C$일 때 구리 박막이 증착이 시작되는 것을 관찰할 수 있었는데, 이러한 낮은 증착 온도는 상대적으로 약한 구리와 ATMS의 결합력에 의한 것으로 생각된다.

• 열처리공학회지
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• 제7권2호
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• pp.129-138
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• 1994

The purpose of this study is to clarify the influence of the reaction temperature and $AlCl_3$ content on the aluminide coating formation on Ni-based superalloy IN713C in CVD process and to compare its throwing power with that of Pack Cementation process. Aluminide coating was formed by CVD in hot-wall stainless tube reactor from an $AlCl_3-H_2$ mixture in the temperature range $850{\sim}1050^{\circ}C$. At reaction temperature $850^{\circ}C$, the coating thickness and the content of aluminium at the surface were increased as $AlCl_3$ heating temperature was raised. At reaction temperature $1050^{\circ}C$, they were not influenced by the variation of $AlCl_3$ heating temperature. When $AlCl_3$ heating temperature was fixed $125^{\circ}C$, the phases of the coatings were varied from $Ni_2Al_3$ to Al-rich NiAl and to Ni-rich NiAl with the reaction temperature. Therefore, in this study the reaction temperature has been found to be a major factor in determining the phase formed in CVD process. The throwing power of CVD was superior to that of Pack Cementation.

• Korean Chemical Engineering Research
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• 제43권3호
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• pp.387-392
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• 2005

Dimethyl carbonate(DMC)는 낮은 독성과 빠른 생분해성으로 인해 MTBE(methyl tert-butyl ether)를 대체할 수 있는 무연가솔린의 첨가제로 주목받는 물질로, 주로 methanol의 carbonylation에 의해 합성되고, 원가절감을 위해 methanol을 출발물질로 한 새로운 DMC 제조공정의 개발이 진행 중에 있다. 이에 필요한 다양한 조건하의 DMC 관련 혼합계의 상평형 자료 및 물성은 Dortmund Data Bank(DDB)검색 결과, 매우 부족하며 무한희석 활동도계수에 대한 자료는 전무한 것으로 나타났다. 이 글에서는 methanol+DMC계의 333.15 K에서의 이성분계 등온 기-액 평형과, 혼합물성으로써 methanol+DMC계의 과잉부피 및 점도편차를 298.15 K에서 측정하였다. 또한, 무한희석상태에서 DMC 용매에서의 methanol의 무한희석 활동도계수를 303.15, 313.15, 323.15 K에서 각각 측정하였으며, 측정값은 modified UNIFAC(Dortmund)식에 의한 계산 값과도 비교하였다.

• 한국결정성장학회지
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• 제9권6호
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• pp.563-569
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• 1999

수평형 반응로에서 $TMS[Si(CH_3)_4]-H_2$ 와 H$_2$가스를 이용하여 SiC 초미분말 합성시 최적 공정 조건을 알아보기 위하여 수치모사방법을 이용하였다. 이론적인 해석 결과, 반응온도가 증가함에 따라 TMS의 전환률은 증가하였지만, 수소유량이 증가함에 따라서는 TMS 전환률이 감소하였다. 또한 반응온도가 높을수록 기상의 충돌확률이 증가하여 최종 생성된 SiC 입자농도는 감소하였지만, 수소유량과 TMS 농도가 증가하는 경우에서는 생성된 입자농도가 증가하였다. 한편 입자크기는 반응온도와 초기 TMS 농도가 증가함에 따라 증가하였지만 수소유량이 증가하는 결향을 나타내었다. 이러한 반응온도, 수소유량 및 TMS 농도에 따른 입자크기 변화는 실제 실한 결과와 이론적으로 고찰한 결과가 일치하였다.

• 한국표면공학회지
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• 제23권4호
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• 한국대기환경학회지
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• 제17권1호
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• pp.57-66
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• 2001

Gas phase photocatalytic oxidation of tetrachloroethylene (PCE) under 370 nm ultra-violet irradiation was investigated with TiO$_2$ catalyst. During the photocatalytic oxidation of PCE vapor several kinds of intermediate were produced, and the reaction pathways were proposed on the basis of the production sequency of the intermediates. The intermediates in the pathways of PCE oxidation were hexachloroethane, pentachlotoethane, 1, 1, 2-trichloroethane, carbon tetrachl-oride, dichloroacetylchloride, chloroform, 1,1-dichloroethane, phosgene, CO, $CO_2$, HCl, Cl$_2$.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.118-121
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• 1998

Diisopropylselenide (DIPSe) is employed for the metalorganic vapor phase epitaxy (MOVPE) of ZnSe in order to eliminate premature gas phase reaction while maintaining negligible carbon incorporation and preserving relatively low growth temperature. In combination with dimethylzinc, single crystalline ZnSe layers were grown on GaAs at temperature around 450$^{\circ}C$. Secondary ion mass spectrometry showed a negligible carbon incorporation in ZnSe films grown from DIPSe even at high [Ⅵ]/[II] ratios, in contrast of a carbon concentration of 1021 cm-3 in ZnSe films grown from diallyselenide (DASe). Crystalline and interface quality are demonstrated by secondary electron microscopy, secondary ion mass spectroscopy and double crystal X-ray diffraction.