• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.309-309
• /
• 2012

Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

• Journal of the Korean institute of surface engineering
• /
• v.38 no.2
• /
• pp.60-64
• /
• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• The Korean Journal of Ceramics
• /
• v.3 no.3
• /
• pp.159-162
• /
• 1997

Diamond was uniformly nucleated on large area Si(001) substrate (3cm$\times$4cm) using the low pressure magnetoactive microwave plasma chemical vapor deposition. $CH_4/He$ gas mixture was used as source gas in order to obtain high radical density in the nucleation enhancement step. $CH_3$radical density was measured by means of infrared laser absorption spectroscopy. The effect of substrate bias voltage on diamond nucleation was examined. The results showed that a suitable positive bias voltage appled to the substrate with respect to the chamber could enhance diamond nucleation while a negative bias voltages leaded to deposition of only non-diamond phase carbon.

• Korean Journal of Materials Research
• /
• v.5 no.5
• /
• pp.568-574
• /
• 1995

We investigated the effects of B-doping on the growth mechanism of ZnO films. The B-doped ZnO films, which were widely applied for transparent conducting electrode, were deposited by plasma enhanced chemcial vapor depostion(PECVD) using diethylzinc(DEZ), No.sub 2/. and B$_{2}$H$_{6}$. The deposition conditions were a sbustrate temperature of 30$0^{\circ}C$, an rf power of 200, and a chamber pressure of 1 torr. At the given depostion condition, the growth rate of B-doped ZnO thin films was higher than that of undoped ones, but didn't change even with further increasing B$_{2}$H$_{6}$ flow rate and the interplanar distance between(0002) planes was reduced as B atoms substituted Zn sites.s.

• Solar Energy
• /
• v.5 no.2
• /
• pp.46-53
• /
• 1985

Hydrogenated amorphous silicon solar cells which are fabricated by photo-chemical vapor deposition (photo-CVD) system has been investigated. In the photo-CVD system which consists of three separate reaction chambers, low-pressure mercury lamp has been used as a light source. The main reactant ($Si_2H_6/He$) gases which are premixed with a small amount of mercury vapor in a mercury-vaporizer kept at $50^{\circ}C$ have been used. Using $C_2H_2$ and $SiH_2(CH_3)_2$ as the carbon source, p-type wide band gap a-SiC:H films have been obtained. The result has been found that the undoped layers of the pin/substrate solar cells are influenced by the residual impurities, such as phosphorus and boron during the deposition process. By minimizing the effect of the impurities in the i-layer and optimizing conditions at the p-layer and p/i interface, the energy conversion efficiency of 9.61 % under AM-1 ($100mW/Cm^2$) has been achieved for pin/substrate solar cells illuminated through their p-layers, using the three separate reaction chamber apparatus. It is expected that a-SiC:H solar cells with the energy conversion efficiency over 10% have been fabricated by Photo-CVD method.

• Advanced Composite Materials
• /
• v.18 no.3
• /
• pp.221-232
• /
• 2009

The allylamine plasma treatment is used to modify the surface properties of vapor grown carbon fibers (VGCF). It is to improve the interfacial bonding between the VGCF and epoxy matrix. The allylamine plasma process was performed by batch process in a vacuum chamber, using gas injection followed by plasma discharge for the durations of 20, 40 and 60 min. The interdependence of mechanical properties on the VGCF contents, treatment time and interfacial bonding between VGCF/ep was investigated. The interfacial bonding between VGCF and epoxy matrix was observed by scanning electron microscopy (SEM) micrographs of nanocomposites fracture surfaces. The changes in the mechanical properties of VGCF/ep, such as the tensile modulus and strength were discussed. The mechanical properties of allylamine plasma treated (AAPT) VGCF/ep were compared with those of raw VGCF/ep. The tensile strength and modulus of allyamine plasma treated VGCF40 (40 min treatment)/ep demonstrated a higher value than those of other samples. The mechanical properties were increased with the allyamine plasma treatment due to the improved adhesion at VGCF/ep interface. The modification of the carbon nanofibers surface was observed by transmission electron microscopy (TEM). SEM micrographs showed an excellent dispersion of VGCF in epoxy matrix by ultrasonic method.

• Journal of the Korean Society of Clothing and Textiles
• /
• v.37 no.8
• /
• pp.1095-1106
• /
• 2013

This study evaluated the wear comfort properties of water-vapor-permeable (WVP) garments using a movable sweating thermal manikin. Manikin tests were performed in a climatic chamber (temperature T=20, $35{\pm}0.5^{\circ}C$ and relative humidity $H=50{\pm}10%$) using seven sportswear outfits (a long sleeve shirts and a long pants) made with seven different WVP fabrics. Physiological responses of wear trials could be correlated with measurement parameters of the thermal manikin experiment; subsequently, a regression model that represented a final comfort sensation could be obtained. The regression model developed in this work is based on thermal manikin measurements; consequently, it provides an independent comfort sensation level in a relatively short time at a low cost while maintaining the reproducibility of results. It translates into more actual choices for sportswear manufacturers and sportswear consumers.

• Journal of Advanced Navigation Technology
• /
• v.17 no.5
• /
• pp.574-580
• /
• 2013

In this paper, The process of thin-film coating technology was applied to improve adhesion of the hardness thin film and nitride layer. This thin-film coating technology have formed composite thin-film to gain hardness and toughness used in press mold. The thin-film coating manufacturing technology increased vacuum present in the vacuum chamber and improved the throw ratio of the gun power using physical vapor deposition coating technology. Ti alloys target improved performance and surface material through the development of a composite film coating technology for various precision machining parts.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.11
• /
• pp.2095-2099
• /
• 2007

In this paper, the optimum amorphous silicon nitride thin film is deposited using plasma enhanced chemical vapor deposition(PECVD). Amorphous silicon nitride is deposited using $SiH_4$ and $NH_3$ gas. At this time, electrical and optical characteristics of amorphous silicon nitride and deposition rate are changed under deposition condition such as $SiH_4$, $NH_3$ and $N_2$ gas flow rate, chamber pressure, rf power and substrate temperature. From the experimental results, we can estimate that the deposition condition makes a good electrical characteristic of amorphous silicon nitride thin film.

• Journal of Environmental Science International
• /
• v.17 no.1
• /
• pp.97-105
• /
• 2008

This study examined the contaminated soils with an indicator of TPH using SVE (Soil Vapor Extraction) and biological treatments. Their results are as follows. Water content in the polluted soils slowly decreased from 15% during the initial experimental condition to 10% during the final condition. Purification of polluted soils by Bioventing system is likely to hinder the microbial activity due to decrease of water content. Removal rate of TPH in the upper reaction chamber was a half of initial removal rate at the 25th day of the experiment. The removal rate in the lower reaction chamber was 45% with concentration of 995.4 mg/kg. When the Bioventing is used the removal rate at the 14th day of the experiment was 53%, showing 7 day shortenting. Since the Bioventing method control the microbial activity due to dewatering of the polluted soil, SVE method is likely to be preferable to remove in-situ TPH. The reactor that included microbes and nutrients showed somewhat higher removal rate of TPH than the reactor that included nurtients only during experimental period. In general, the concentration showed two times peaks and then decreased, followed by slight variation of the concentration in low concentration levels. Hence, in contrast to SVE treatment, the biological treatment tend to show continuous repetitive peaks of concentration followed by concentration decrease.