• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1057-1059
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• 2002

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.143-144
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_2S_4$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_2S_4$ thin films measured with Hall effect by van der Pauw method are $8.51\times10^{17}$ electron/$cm^{-3}$, 291 $cm^2$/v-s at 293 K, respectively.

• 한국표면공학회지
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• 제29권6호
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• pp.876-879
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• 1996

The effect of oxygen vacancy and Sn donor on carrier density for Indium Tin oxide (ITO) and Indium oxide (InO) films has been investigated. Hot-cathode Penning discharge sputtering (HC-PDS) in the mixed gasses of argon and oxygen was applied to fabricate the ITO and InO films. Density of oxygen vacancy was estimated using a high-energy ion beam technique. The electrical properties of the films such as resistivity, carrier density and mobility were estimated by Van der Pauw method. The doping efficiency of oxygen vacancy could be obtained from the relationship between oxygen vacancy and carrier density. The doping efficiency of oxygen vacancy for ITO films resulted in a quite small value. Comparing the doping efficiencies of ITO and InO films, the effect of Sn donor on carrier density was also discussed.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• Journal of Magnetics
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• 제10권4호
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• pp.149-151
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• 2005

The electric properties of a single crystal bismuth telluride doped with a small concentration of Erbium, $Bi_{z-x}Er_xTe_3$ with x = 0.002, are investigated as a function of temperature. The resistivity was obtained by using the van der Pauw method. The measured electrical resistivity is 78 ${\mu}{\Omega}cm$ at 4.2 K. The charge density of $Bi_{z-x}Er_xTe_3$ is found to be $2{\times}10^{19}/cm^3$ at 4.2 K. It turns out that $Bi_{z-x}Er_xTe_3$ is a p-type semiconductor. It is discussed that the high mobility and less density support that $Bi_{z-x}Er_xTe_3$ is a potential sensor with high energy resolution. Comparison with an established material (i.e. Au:Er alloy) is also discussed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.136-137
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• 2006

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.599-600
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• 2005

The measurement method of electrical conductivity of the metal use a generally DC technique. Traceability to national standards in many countries is achieved using DC measurement technique and recently it's interested in AC technique. As a results for AC technique, the properties of electrical conductivity of non-ferrous and ferrous metals is decreasing at low frequency level.

• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• 센서학회지
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• 제4권1호
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• pp.51-63
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• 1995

Chemical bath deposition 방법으로 다결정 $CdS_{1-x}Se_{x}$ 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회질 무늬를 측정하여 결정 구조를 밝혔다. $550^{\circ}C$로 열처리한 시료의 X-선 회절 무늬로부터 외삽법으로 구한 격자 상수는 CdS의 경우 $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ 였으며 CdSe인 경우는 $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ 였다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도 의존성을 연구하였다. 광전도 셀의 특성으로 스펙트럼 응답, 감도(${\gamma}$), 최대 허용 소비전격 및 응답시간을 측정하였다.