• Title/Summary/Keyword: value of bi

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Magnetic and Structural Properties of MnBi1-xTix Alloys

  • Zhang, Suyin;Zhang, Pengyue;Jiang, HuanChang;Shi, Yaojun;Yu, Nengjun;Ge, Hongliang
    • Journal of Magnetics
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    • v.19 no.3
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    • pp.205-209
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    • 2014
  • $MnBi_{1-x}Ti_x$ (x = 0, 0.4, 0.7, 1) alloys were prepared by arc-melting, followed by heat treatment. X-ray diffraction (XRD) and vibrating sample magnetometer (VSM) were used to measure and investigate the phase structure and magnetic properties. The temperature dependent magnetization curves indicate that the phase transitions between LTP and HTP MnBi occur with heating or cooling in $MnBi_{1-x}Ti_x$ ($x{\leq}0.7$) samples. However, MnTi samples are in $Mn_2Ti$ single-phase, with very low magnetic properties. Furthermore, the coercivity exhibits a positive temperature coefficient. The results show that the optimal content of Ti for the coercivity of $MnBi_{1-x}Ti_x$ alloy is x = 0.4. For MnBi sample, the coercivity reaches a maximum value of 1.13 T at 550 K. However, the remanence and energy product show apparent decrease with the addition of Ti in $MnBi_{1-x}Ti_x$ alloys.

A Study on Energy Band Change and Stability in Photoelectrolysis by Use of Titanium Oxide Films on Ti-Bi Alloy (Ti-Bi 합금 위에 형성된 산화티타늄 피막의 광 전기분해시 에너지밴드와 안정성에 관한 연구)

  • Park, Seong-Yong;Cho, Byung-Won;Yun, Kyung-Suk
    • Transactions of the Korean hydrogen and new energy society
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    • v.5 no.1
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    • pp.41-49
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    • 1994
  • Ti-Bi alloy was prepared by arc melting of appropriate amounts of titanium and bismuth powder. The photocurrent($I_{ph}$) of Ti-Bi oxide electrode was increased with the increase of Bi content, up to 10wt%. The maximum $I_{ph}$ showed $7.6mA/cm^2$ at V=0.5V vs. SCE. The band gap energy of Ti-Bi oxide electrode was observed to 3.0~2.87eV. Surface barrier($V_s$) of Ti-10Bi oxide electrode showed maximum value(1.08V) but didn't exceed 1.23V, then it was impossible to run $H_2$ generation without any other energy sources other than the light. Ti-Bi oxide electrode was found to be quite stable under alkaline solution and showed no signs of photodecomposition.

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Reaction Mechanism of Purine Nucleoside Phosphorylase and Effects of Reactive Agents for SH Group on the Enzyme in Saccharomyces cerevisiae (Saccharomyces cerevisiae에서 얻은 Purine Nucleoside Phosphorylase의 반응기작과 효소에 대한 Sulfhydryl Reagent의 영향)

  • Choi, Hye-Seon
    • Korean Journal of Microbiology
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    • v.32 no.3
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    • pp.222-231
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    • 1994
  • Kinetic analysis was done to elucidate the reaction mechanism of purine nucleoside phosphorylase (PNP) in Saccharomyces cerevisiae. The binary complexes of PNP${\cdot}$phosphate and PNP${\cdot}$ribose 1-phosphate were involved in the reaction mechanism. The initial velocity and product inhibition studies demonstrated were consistent with the predominant mechanism of the reaction being an ordered bi, bi reaction. The phosphate bound to the enzyme first, followed by nucleoside and base were the first product to leave, followed by ribose 1-phosphate. The kinetically suggested mechanism of PNP in S. cerevisiae was in agreement with the results of protection studies against the inactivation of the enzyme by sulfhydryl reagents, p-chloromercuribenzoate (PCMB) and 5,5'-dithiobisnitrobenzoate (DTNB). PNP was protected by ribose 1-phosphate and phosphate, but not by nucleoside or base, supporting the reaction order of ordered bi, bi mechanism. PCMB or DTNB-inactivated PNP was totally reactivated by dithiothreitol (DTT) and the activity was returned to the level of 77% by 2-mercaptoethanol, indicating that inactivation was reversible. The kinetic behavior of the PCMB-inactivated enzyme had been changed with higher $K_m$ value of inosine and lower $V_m$, and was restored by DTT. Inactivation of enzyme by DTNB showed similar pattern of K sub(m) value with that by PCMB, but had not changed the $V_m$ value, significantly. Negative cooperativity was not found with PCMB or DTNB treated PNP at high concentration of phosphate.

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The Critical Current Characteristics and n-value Measurement of HTS Tapes (HTS선재의 $I_c$-B 특성 및 n 값 측정)

  • Ku, Myung-Hwan;Kang, Myung-Hun;Lee, Hee-Joon;Cha, Guee-Soo
    • Progress in Superconductivity and Cryogenics
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    • v.12 no.1
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    • pp.12-16
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    • 2010
  • Critical current - magnetic field ($I_c$-B) relation is one of the basic properties of an HTS wire, which is needed for the design of performances of superconducting devices. Experimental results of the $I_c$-B relation of Bi-2223 and YBCO superconducting wire are presented in this paper. n-value is also an important parameter which is needed to calculate the electric field by using the power-law. Measurement results of the n-value of the same HTS superconducting wires are also presented.

Evaluation of Sticking Coefficient in BSCCO Thin Film Fabricated by Co-sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Kwon-Hyun;Lee, Joon-Ung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.1
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    • pp.80-84
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    • 2000
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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Analysis of Sticking Coefficient in BSCCO Thin Film Fabricatied for apply to Biomedical device (의용소자로 응용하기 위해 제작한 BSCCO 박막의 부착계수 해석)

  • Yang, Seung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.351-352
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    • 2006
  • BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_2O_3$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_2O_3$.

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Dyeing Properties of Functional PET Double Knit Fabric (기능성 폴리에스터 이중 편성물의 염색 특성)

  • Lee, Bum Hoon
    • Textile Coloration and Finishing
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    • v.34 no.3
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    • pp.146-156
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    • 2022
  • In this study, the dyeing properties of double knit fabric composed of PET/PTT bi-component fiber and quick dry fiber were examined with disperse dyes. In addition, the shrinkage characteristics were investigated during the dyeing process. The K/S values and shrinkage rate of PET/PTT bi-component fiber were higher than those of PET/co-PET bi-component fiber and quick dry fiber. In the dye bath, dye migration of exhausted on PET/PTT bi-component fiber to quick dry fiber was found at high dyeing temperature. It was not found that there was a significant difference in K/S value on dyeing temperature between 115℃ and 130℃. But the slight color difference of two sides of a double knit fabric was found.

Analysis of Sticking Coefficient in BSCCO Superconductor Thin Film Fabricated by Co-deposition (공증착법으로 제작한 BSCCO 초전도 박막의 부착계수 해석)

  • An, In-Soon;Chun, Min-Woo;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.300-303
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    • 2001
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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Analysis of Sticking Coefficient in BSCCO Superconductor Thin Film Fabricated by Co-deposition (공증착법으로 제작한 BSCCO 초전도 박막의 부착계수 해석)

  • 안인순;천민우;박용필
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.300-303
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    • 2001
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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Effect of transverse compressive stress on $I_{c}$ degradation characteristics in Bi-2223 superconducting tapes (Bi-2223 초전도테이프의 임계전류 열화특성에 미치는 횡방향 압축응력의 영향)

  • 신형섭;김병수;오상수;하동우;하홍수
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.02a
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    • pp.101-104
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    • 2003
  • Influences of transverse compressive stress on the critical current ( $I_{c}$) in AgMg and AgMn alloy sheathed Bi-2223 tapes were investigated at 77 K and 0 T. The $I_{c}$ degradation behavior depending on sample specifications was discussed in viewpoints of n-value and damage morphology. As a result, Bi-2223 tapes showed a significant drop in $I_{c}$ for stresses greater than 50MPa. The AgMg sheathed Bi-2223 tapes representing higher $I_{c}$ showed a lower $\sigma$$_{irr}$ and a significant $I_{c}$ degradation with increase in compressive stress. There existed a voltage tap separation dependency of the $I_{c}$ degradation behavior caused by the transverse compressive stress.sive stress.s.

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